Temperature dependent polarization-switching behavior in Hf0.5Zr0.5O2 ferroelectric film

Improved Ferroelectricity in Cryogenic Phase Transition of Hf0.5Zr0.5O2

“…The Curie temperature is 732K by the best fit of the LGD model using our experimental data in Fig. 6, in line with what has been reported for the similar HfxZr1-xO2 system [18], [23][24][25]. Compared the estimated 0 (1.7E6 VmK -1 C -1 ) from temperature-dependent permittivity ( 𝜀 ) in Curie-Weiss law (Eq.…”

Ferroelectric La‐Doped ZrO2/HfxZr1−xO2 Bilayer Stacks with Enhanced Endurance

“…nonpolar orthorhombic into polar orthorhombic phase, nonuniform distribution of charged defects (e.g., oxygen vacancies), depinning of domains, and alignment of their polarization along the applied electrical field, are not excluded. [16][17][18][19][20][21] As shown in Figure 3b, the coercive field (2E c ) seems to increase with the number of applied field cycles, which is related to the opening of P-E loops, as shown in Figure 4.…”

Design of high polarization low switching barrier hybrid improper ferroelectric perovskite oxide superlattices

“…Making the poles accessible has both negative and positive effects. 31,32 An increase in temperature can reduce the coercive voltage of an FE material, which helps to switch the polarization with a lesser external load, 31 and can reduce the switching time, 32 favorable to fast switching. At the same time, an increase in temperature reduces the polarization in some FE materials 32,44 and favors back-switching, 45 which basically reduces the efficiency and storage capability of the FE memory devices.…”

“…Naturally, the ferroelectric phase will be functional below the ferroelectric transition temperature T c of the system, above which the system becomes para-electric. And previous reports indicate that a finite increase in temperature can reduce the coercive voltage of an FE material, which helps to switch the polarization with a lesser external load, 31 and can reduce the switching time. 32 Hence, operating temperature is another important parameter in designing FE devices.…”