Temperature-dependent photoresponsivity and high-temperature (190K) operation of a quantum dot infrared photodetector

Lu, Xuejun; Vaillancourt, Jarrod; Meisner, Mark J.

doi:10.1063/1.2766655

Cited by 60 publications

(42 citation statements)

References 16 publications

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“…It is well known from experiment that the thermionic emission becomes a significant limiting factor especially in the LWIR and VLWIR-spectral range [7]. The result is that the responsivity decreases with increasing temperature, so that the detectivity is not only declining due to an increasing darkcurrent.…”

Section: Introductionmentioning

confidence: 79%

“…Until today much research effort has been spent on QDIPs in order to achieve a device performance similar to QWIPs but at significantly higher temperatures. Notable success has been achieved in the meantime by several groups [5][6][7][8][9][10][11]28]. The most important approach to increase the detectivity, is the introduction of barriers in order to decrease the darkcurrent and/or to place the quantum dots (QDs) inside a quantum well (QW), these are the so called dot in a well (DWELL) structures [14].…”

Section: Introductionmentioning

confidence: 99%

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Injector Quantum Dot Molecule Infrared Photodetector: A Concept for Efficient Carrier Injection

Gebhard

2011

Nano-Micro Lett.

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Quantum dot infrared photodetectors are expected to be a competitive technology at high operation temperatures in the long and very long wavelength infrared spectral range. Despite the fact that they already achieved notable success, the performance suffers from the thermionic emission of electrons from the quantum dots at elevated temperatures resulting in a decreasing responsivity. In order to provide an efficient carrier injection at high temperatures, quantum dot infrared photodetectors can be separated into two parts: an injection part and a detection part, so that each part can be separately optimized. In order to integrate such functionality into a device, a new class of quantum dot infrared photodetectors using quantum dot molecules will be introduced. In addition to a general discussion simulation results suggest a possibility to realize such a device.

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Section: Introductionmentioning

confidence: 79%

Section: Introductionmentioning

confidence: 99%

Injector Quantum Dot Molecule Infrared Photodetector: A Concept for Efficient Carrier Injection

Gebhard

2011

Nano-Micro Lett.

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“…This potential of QD-based detectors has spurred a great deal of research activity in the area [16][17][18][19][20][21]. QDIPs can be used in FPA-based infrared imaging systems, which have been widely investigated for middle wavelength infrared (3-5 μm) and LWIR (8-12 μm) applications [22][23][24][25].…”

Section: Quantum Dots For Infrared Detectionmentioning

confidence: 99%

Quantum Dots

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Razeghi

2015

Photonics

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INTRODUCTIONThe strong interest in low dimensional semiconductor structures originates from their exciting electronic properties, which can have an important impact on the performance of electronic and photonic devices. The quantum dots (QDs), also known as quantum boxes, are nanometer scale islands in which electrons and holes are confined in threedimensional (3D) potential boxes. They are expected to show a zero-dimensional (0D), -function density of states and are able to quantize an electron's free motion by trapping it in a quasi-0D potential confinement. As a result of the strong confinement imposed in all three spatial dimensions, quantum dots are similar to atoms. They are frequently referred to as "artificial atoms." Due to this confinement, novel physical properties will emerge, which can lead to new semiconductor devices as well as drastically improved device performance.As the particles are confined in all three dimensions, there is no dispersion curve and the density of states is just dependent on the number of confined levels. For one single dot, only two (spin-degenerate) states exit at each energy level and the plot of the density of states versus energy will be a series of -functions. Figure 6.1 shows the change of the density states from a bulk system to the low dimensional systems of quantum wells (QWL), quantum wires (QWR), and QDs. The calculation of these density of states can be found in an introductory solid state text [1].In QDs, the width of the electron energy distribution is zero in an ideal case. This means that electrons in those structures are distributed in certain discrete energyFIGURE 6.1 Density of state of zero-dimensional (upper left), one-dimensional (upper right), two-dimensional (lower left), and bulk (lower right) systems.levels, and the energy distribution width is fundamentally independent of temperature.In real semiconductor structures, due to many interaction processes such as electronelectron and electron-phonon scattering (which can also be reduced by QDs due to the lack of phonons to satisfy the energy conservation, which is the so-called phonon bottleneck [2]), a certain width in the electron energy distribution exists. However it is expected to be much smaller compared to bulk and QW systems. The condition for novel and interesting electronic properties to occur in a QDbased device is that the lateral size of the QD should be smaller than the coherence length and the elastic scattering length of the carriers. Additional quantum-size effects require the structural features to be reduced to the range of the de Broglie wavelength. The advantages in operation depend not only on the absolute size of the nanostructures in the active region, but also on the uniformity of size and shape. A large distribution of sizes would "smear" the density of states of QDs thus making it more like that of bulk material. Therefore, the repeatable fabrication of these nanometer 3D quantum structures requires methods with atomic scale accuracy, which presents a major challenge for current...

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“…Up till now, however, most of the QDIP devices reported in the literature have been working in the temperature range of 77 to 200 K. On account of this fact, it is interesting to insight on achievable QDIP performance in temperature range above 200 K in comparison with other type of detectors. Figure 19 compares the calculated detectivity of Auger generation-recombination limited HgCdTe photodetectors as a function of wavelength and operating temperature with the experimental of uncooled type-II InAs/GaInSb SLS detectors and QDIPs [91,98,100]. The Auger mechanism is likely to impose fundamental limitations to the LWIR HgCdTe detector performance.…”

Section: Experimental Verificationmentioning

confidence: 99%

New material systems for third generation infrared photodetectors

Rogalski¹

2008

Opto-Electronics Review

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Third-generation infrared (IR) systems are being developed nowadays. In the common understanding, these systems provide enhanced capabilities-like larger numbers of pixels, higher frame rates, and better thermal resolution as well as multicolour functionality and other on-chip functions. In this class of detectors, two main competitors, HgCdTe photodiodes and quantum-well photoconductors, have being developed.Recently, two new material systems have been emerged as the candidates for third generation IR detectors, type II InAs/GaInSb strain layer superlattices (SLSs) and quantum dot IR photodetectors (QDIPs).In the paper, issue associated with the development and exploitation of multispectral photodetectors from these new materials is discussed. Discussions is focused on most recently on-going detector technology efforts in fabrication both photodetectors and focal plane arrays (FPAs). The challenges facing multicolour devices concerning complicated device structures, multilayer material growth, and device fabrication are described.

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Temperature-dependent photoresponsivity and high-temperature (190K) operation of a quantum dot infrared photodetector

Cited by 60 publications

References 16 publications

Injector Quantum Dot Molecule Infrared Photodetector: A Concept for Efficient Carrier Injection

Injector Quantum Dot Molecule Infrared Photodetector: A Concept for Efficient Carrier Injection

Quantum Dots

New material systems for third generation infrared photodetectors

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