Temperature-dependent photoluminescence properties of single defects in AlGaN micropillars

Abstract

Single-photon emitters (SPEs) are attractive as integrated platforms for quantum applications in technologically mature wide-bandgap semiconductors since their stable operation at room temperature or even at high temperatures. In this study, we systematically studied the temperature dependence of the SPE in AlGaN micropillars by experiment. The photoluminescence (PL) spectrum, PL intensity, radiative lifetime and second-order autocorrelation function measurements are investigated over the temperature range from 303-373 K. The point defects of AlGaN show strong zero phonon line (ZPL) in the wavelength range of 800-900 nm and highly antibunched photon emission even up to 373 K. Our study reveals a possible mechanism for linewidth broadening in AlGaN SPE at high temperatures. This indicates a possible key for on-chip integration applications based on this material operating at high temperatures.

Blue Delayed Luminescence Emission in Neutral Nitrogen Vacancy Containing Chemical Vapor Deposition Synthetic Diamond

“…[6] Similar temperature-dependent behavior is observed for another peak at 535 nm, though the defect responsible for this peak remains unidentified. [7,8] Figure 1b shows the temperature dependence of the delayed photoluminescence measured at 90 μs after initial excitation. The intensity of the NV 0 center photoemission located at 575 nm and the smaller spectral peak at 535 nm increase at 290 K, with observed diminishing intensity and sharpness as the temperature increases above this.…”

“…[ 6 ] Similar temperature‐dependent behavior is observed for another peak at 535 nm, though the defect responsible for this peak remains unidentified. [ 7,8 ]…”

“…With the shortening lifetime of the NV 0 center, it may be hypothesized that during the higher temperatures, the NV 0 center has a limited duration of existence before undergoing a transformation or decay implying the nitrogen and vacancies assume a more energetically favorable form. [ 7 ] …”