2018
DOI: 10.1007/s10854-018-0137-3
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Temperature dependent photoluminescence from WS2 nanostructures

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Cited by 19 publications
(12 citation statements)
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“…[41,42] As the temperature decreases to liquid nitrogen temperature (77 K), both the X 0 and T emissions become more intense, which is ascribed to the reduced phonon scattering at low temperature. [43] Also, clear blue-shifts of the peak positions indicated by the black arrows are found for both X 0 and T emissions. Figure 3b shows the peak emission energy of X 0 and T extracted by the dual-Gaussian fitting.…”
Section: Wwwadvopticalmatdementioning
confidence: 83%
“…[41,42] As the temperature decreases to liquid nitrogen temperature (77 K), both the X 0 and T emissions become more intense, which is ascribed to the reduced phonon scattering at low temperature. [43] Also, clear blue-shifts of the peak positions indicated by the black arrows are found for both X 0 and T emissions. Figure 3b shows the peak emission energy of X 0 and T extracted by the dual-Gaussian fitting.…”
Section: Wwwadvopticalmatdementioning
confidence: 83%
“…36 In addition, a few minor peaks at 226, 298, 324, and 525 cm −1 were also detected, which are consistent with the previous literature and usually occurred in a monolayer or a few layers of WS 2 nanosheets. 35,37 The origin of these peaks is related to the second-order modes, i.e., phonon overtone and combination of E′ mode. 36 The XRD and Raman results also confirmed the presence of the semiconducting 2H phase of the fewlayered WS 2 nanosheets.…”
Section: ■ Experimental Detailsmentioning
confidence: 99%
“…Liang et al have also reported that the frequency difference of 60.31 and 62.18 cm −1 between the A 1g and E 1 2g peaks suggest the formation of single and bilayer WS 2 nanosheets, respectively. 34,35 Berkdemir et al reported the Raman scattering of single and few-layered WS 2 as a function of the number of S−W−S layers, and it was found that the softening of the A 1g mode (419 cm −1 ) also depicts the reduced number of layers which arises from weaker interlayer contributions to the phonon restoring forces. 32 In the present case the difference of the peak positions (E 1 2g and A 1 g ) was about 68 cm −1 , indicating that the sample is made up of few-layered WS 2 nanosheets.…”
Section: ■ Experimental Detailsmentioning
confidence: 99%
“…Generally, the PL intensity of an excitonic band in semiconductors is dramatically quenched with an increase in temperature due to thermally activated non-radiative recombination channels because of the increase in electron-phonon interactions. 43,44 The thermal motion and population of the phonons increase with an increase in temperature, resulting in more scattering of photo-generated carriers via the non-radiative recombination process and reduction in the probability of radiative transition, which gives rise to quenching in intensity with an increase in temperature. For instance, quenching in the exciton intensity occurs due to the decaying of excitons into electrons and holes, which also recombine with phonons via a non-radiative recombination process.…”
Section: Resultsmentioning
confidence: 99%