Temperature-dependent photodetection behavior of AlGaN/GaN-based ultraviolet phototransistors

Abstract

In this work, we investigated the temperature-dependent photodetection behavior of a high-performance AlGaN/GaN-based ultraviolet phototransistor (UVPT) operating under 265 nm illumination. As the temperature continuously rises from room temperature to 250 °C, the photocurrent of a device increases in the beginning but suffers from degradation afterwards. This can be explained by the competing process between the generation and recombination rate of photo-induced carriers in the UVPT at room and high temperatures. Intriguingly, we found that the optimal operating temperature for our UVPT is around 50 °C, featuring a high peak responsivity of 1.52 × 105 A/W under a light intensity of 45 μW/cm2. Furthermore, the photoresponse time of our UVPT is also highly temperature-dependent, exhibiting the shortest rise time of 50 ms at 100 °C while the decay time is monotonically reduced as the temperature rises to 250 °C. Notably, our AlGaN/GaN-based UVPTs exhibit ultra-high responsivity at high temperatures, which have outperformed those earlier reported UV photodetectors in the form of different device architectures, highlighting the great potential of such device configurations for harsh environment applications.

Hierarchical Nanosheet-Based NaBiS2 Flowers for High-Performance and Self-Powered Broadband Photodetectors

“…Furthermore, the effect of temperature on the photoresponse characteristics is also investigated. As shown in Figure S5, the photocurrent increases and then decreases with the temperature increase from 40 to 120 °C, and is the highest (∼140 μA/cm 2 ) when the temperature is 70 °C, which may be caused by the competing process between the generation and the recombination rate of photogenerated carriers . It is also found that the dark current increases with temperature, which is unfavorable for the stability of the NaBiS 2 flower photodetector.…”

“…As shown in Figure S5, the photocurrent increases and then decreases with the temperature increase from 40 to 120 °C, and is the highest (∼140 μA/cm 2 ) when the temperature is 70 °C, which may be caused by the competing process between the generation and the recombination rate of photogenerated carriers. 26 It is also found that the dark current increases with temperature, which is unfavorable for the stability of the NaBiS 2 flower photodetector. We compare the detection performance of the NaBiS 2 flower photodetector with that of other semiconductor-based photodetectors, as shown in Table S1.…”

Progress on photovoltaic AlGaN photodiodes for solar-blind ultraviolet photodetection

“…Subsequently, Yang et al investigated the temperature dependence of UV photodetection behavior in AlGaN/GaN UVPT under 265 nm illumination [145] . The authors found that the photocurrent of a device changes in a parabolic mode with the temperature continuously increasing from room temperature to 250°C.…”

Heterointerface engineering of tetragonal CsPbCl3 based ultraviolet photodetectors with pentacene for enhancing the photoelectric performance

“…Visible blind photodetectors which convert ultraviolet (UV) optical signals into electronic signals are of great importance for imaging systems, 1 biological sensors, 2 medical analysis, 3 astronomical observation, 4 military monitoring, 5 and so forth. 6–8 Several eminent semiconductor materials including GaN, 9 Ga 2 O 3 , 10 ZnO, 11 diamond 12 and organic materials 13–16 have witnessed enormous advances in the application of broadband or narrowband visible blind UV photodetectors. However, the performance enhancement of the devices based on these materials is seriously restricted by their either sophisticated and expensive approaches or imperfect material characteristics.…”