Temperature dependent phase transition of EuO on MgO(100)

Lee, Hangil; Kim, J.-Y.; Rho, Keehan; Park, B.-G.; Park, Jae‐Hyoung

doi:10.1063/1.2775297

Cited by 11 publications

(5 citation statements)

References 19 publications

(11 reference statements)

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“…Figure 2(b) shows the Eu M 5 -edge XAS spectrum measured from a ESMO film on LSAT. It is clearly shown that the Eu M 5 -edge spectrum of the ESMO thin film is in good agreement with that of Eu 3þ , as previously reported for Eu 2 O 3 (a dashed curve) [44]. Figure 2(c) shows the Mn L 2;3 -edge XAS spectra probing the unoccupied Mn 3d states via the 2p-3d dipole transition for the four different strained ESMO thin films.…”

Section: Resultssupporting

confidence: 85%

Strain Effects in Narrow-Bandwidth Manganites: The Case of EpitaxialEu0.7Sr0.3MnO3Thin Films

2014

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We have investigated the strain-dependent magnetic properties of epitaxial narrow-bandwidth manganite, Eu 0.7 Sr 0.3 MnO 3 (ESMO), thin films on various substrates traversing from compressive (−2.4%) to tensile (þ1.5%) strain. The stoichiometry and crystalline quality of the films were confirmed with diffraction and spectroscopic-based characterization. Using field-and temperature-dependent magnetometry, we find that the epitaxial strain acts to suppress the ferromagnetic state, although films under compressive strain retain a greater propensity for ferromagnetic behavior. However, temperature-dependent resistivity reveals that ESMO thin films exhibit a ferromagnetic insulating state in contrast to widebandwidth La 0.7 Sr 0.3 MnO 3 films under a comparable strain. The combination of a highly strain-dependent ferromagnetic state and robust insulating behavior may offer novel applications in spin filtering, sensing, or electronics.

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Section: Resultssupporting

confidence: 85%

Strain Effects in Narrow-Bandwidth Manganites: The Case of EpitaxialEu0.7Sr0.3MnO3Thin Films

2014

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“…The splitting energy of the O 2p state is consistent with the band calculation in Figs. 2(g4) and 2(x4), and also with the spin-resolved photoemission spectroscopy results [17]. Here, the O 2p bands at the higher and lower binding energies are attributed to the majority-and minority-spin states, respectively.…”

supporting

confidence: 73%

“…To date, changes in the electronic structure of EuO at T C have been investigated using infrared [8][9][10][11], x-ray adsorption [12], and angle-integrated photoemission spectroscopy [13][14][15][16][17]. Although the obtained data show the change in the electronic structure caused by magnetic ordering, the change in the band structure to clarify the momentum dependence of the 4f state and its relation to the exchange interaction have never been investigated.…”

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confidence: 99%

Direct Observation of Momentum-Dependent Exchange Interaction in a Heisenberg Ferromagnet

Miyazaki

Ito

et al. 2009

Phys. Rev. Lett.

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We measured the temperature-dependent three-dimensional angle-resolved photoemission spectra of EuO (100) thin film, a typical Heisenberg ferromagnetic semiconductor, to investigate the essential origin of the ferromagnetic transition. We observed sizable energy dispersion and large binding-energy shift of the Eu 4f state below the Curie temperature only near the Gamma and X points, despite the expected Heisenberg-type local magnetism. The band dispersion and temperature dependence of the Eu 4f state indicates that the indirect exchange and superexchange interactions have strong momentum dependence. The observed temperature-dependent energy shift of the 4f state is the essential origin of the magnetism of EuO.

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“…Figure 1B shows the PES spectra of 2 nm EuO/ 5 nm SrO/SrTiO 3 [Figure 1B(1)], 5 nm EuO/SrTiO 3 [Figure 1B(2)], and 5 nm SrO/SrTiO 3 films [Figure 1B(3)] measured at 10 K for h] = 38 eV. The 2-nm EuO/5-nm SrO/ SrTiO 3 film only presented Eu 2+ 4f and O 2p [Figure 1(b1)] although the 5-nm EuO/SrTiO 3 displayed Eu 3+ 4f and metallic states originating from Eu 2 O 3 and Eu metal [Figure 1B(2)], respectively (Lee et al, 2007). These results suggest that the SrO buffer layer prevents oxygen diffusion from the SrTiO 3 substrate to the EuO ultrathin film.…”

Section: Resultsmentioning

confidence: 99%

Observation of Thickness-Dependent Exchange Interaction in EuO Ultrathin Films

Miyazaki

Hajiri

Matsunami

et al. 2022

Front. Nanotechnol.

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The electronic structure of single-crystalline EuO (100) ultrathin films, together with their exchange splitting energy (ΔEEX) and ferromagnetic phase transition temperature (TC), was investigated by temperature- and thickness-dependent angle-resolved photoemission spectroscopy. Both ΔEEX and TC decreased monotonically with decreasing film thickness. The band shift showed an opposite thickness dependence at the Γ and X points, reflecting the balance of the hybridization between the Eu 4f and O 2p states (super-exchange interaction) and between the Eu 4f, O 2p, and Eu 5d states (indirect-exchange interaction). The observed transition from an indirect energy gap in the bulk to a direct gap in the ultrathin films of the ferromagnetic semiconductor EuO could be potential in future spintronic devices.

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Temperature dependent phase transition of EuO on MgO(100)

Cited by 11 publications

References 19 publications

Strain Effects in Narrow-Bandwidth Manganites: The Case of EpitaxialEu0.7Sr0.3MnO3Thin Films

Strain Effects in Narrow-Bandwidth Manganites: The Case of EpitaxialEu0.7Sr0.3MnO3Thin Films

Direct Observation of Momentum-Dependent Exchange Interaction in a Heisenberg Ferromagnet

Observation of Thickness-Dependent Exchange Interaction in EuO Ultrathin Films

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