Temperature dependent optical properties of self-organized InAs/GaAs quantum dots

Heitz, R.; Mukhametzhanov, I.; Madhukar, A.; Hoffmann, A.; Bimberg, D.

doi:10.1007/s11664-999-0105-z

Cited by 126 publications

(101 citation statements)

References 28 publications

(42 reference statements)

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“…The PL intensity quenching for the high energy SQD starts at low temperatures (10-20 K and 30-40 K for samples I and II, respectively), while for LQD bands the PL intensity quenching starts at higher temperatures (70-80 K and 120-140 K for samples I and II, respectively), as expected for a thermally activated process. [4][5][6] SQD and LQD bands in sample I also exhibit an increase of the integrated intensity with temperature as it is shown on the Arrhenius plots at Figures 3(c). This PL-temperature trend is an accepted signature of a carrier thermal transfer.…”

Section: Resultssupporting

confidence: 53%

“…A variety of carrier redistribution effects caused by temperature has been investigated in QD ensembles. [4][5][6][7][8][9][10][11][12][13][14][15] It is commonly accepted that the sigmoidal evolution of the peak energy and full width at half maximum of the PL bands is due to carrier promotion from small QDs to larger ones. 6 Therefore, quantum dot size distributions, carrier capture, relaxation, and re-trapping among QDs of different sizes had to be considered to model correctly the QD recombination dynamics.…”

Section: Introductionmentioning

confidence: 99%

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Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots

Muñoz‐Matutano

Suárez²,

Canet‐Ferrer

et al. 2012

Journal of Applied Physics

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We have investigated the temperature dependent recombination dynamics in two bimodally distributed InAs self assembled quantum dots samples. A rate equations model has been implemented to investigate the thermally activated carrier escape mechanism which changes from exciton-like to uncorrelated electron and hole pairs as the quantum dot size varies. For the smaller dots, we find a hot exciton thermal escape process. We evaluated the thermal transfer process between quantum dots by the quantum dot density and carrier escape properties of both samples.

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Section: Resultssupporting

confidence: 53%

Section: Introductionmentioning

confidence: 99%

Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots

Muñoz‐Matutano

Suárez²,

Canet‐Ferrer

et al. 2012

Journal of Applied Physics

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“…In our calculation, the values of α and β for the InAs QDs were obtained 4.9 × 10 −4 eV/K and 234 K, respectively. These fitting values are in good agreement with the reported result for InAs/GaAs QDs [12]. Due to the carrier localization effects, the groundstate PL peak energies of InAs QDs are more or less a constant below 40 K [13].…”

Section: Resultssupporting

confidence: 91%

“…The ground-state and first excited state energy of the InAs QDs were observed at 1.104 and 1.154 eV, respectively, and the signal of InAs wetting layer appeared at 1.335 eV. The temperature-dependence of the ground-state PL peak InAs were taken from other literatures [12]. The blue stars are the measured data from the ground-state PL peak position of the InAs QDs, and the red solid line is the theoretical fit to the experimental data by Varshni's formula.…”

Section: Resultsmentioning

confidence: 99%

Temperature Dependent Photoluminescence from InAs/GaAs Quantum Dots Grown by Molecular Beam Epitaxy

Lee

Kim

et al. 2017

Appl. Sci. Converg. Technol.

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We have reported structural and optical properties of self-assembled InAs/GaAs quantum dot (QD) grown by molecular beam epitaxy with different arsenic to indium flux ratios (V/III ratios). By increasing the V/III ratio from 9 to 160, average diameter and height of the InAs QDs decreased, but areal density of them increased. The InAs QDs grown under V/III ratio of 30 had a highest-aspect-ratio of 0.134 among them grown with other conditions. Optical property of the InAs QD was investigated by the temperature-dependent photoluminescence (PL) and integrated PL. From the temperature dependence PL measurements of InAs QDs, the activation energies of E a1 and E a2 for the InAs QDs were obtained 48 ± 3 meV and 229 ± 23 meV, respectively. It was considered that the values of E a1 and E a2 are corresponded to the energy difference between ground-state and first excited state, and the energy difference between ground-state and wetting layer, respectively.

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“…Assuming γ = 60 µeV and γ * = 7 meV for an InAs/GaAs QD at 300K [21,52], we predict I=0.72, β=0.088 and F=7.3. Secondly, we consider a single silicon vacancy (SiV) center in a nano-diamond coupled to a fiber cavity.…”

mentioning

confidence: 82%

Cavity-Funneled Generation of Indistinguishable Single Photons from Strongly Dissipative Quantum Emitters

et al. 2015

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We investigate theoretically the generation of indistinguishable single photons from a strongly dissipative quantum system placed inside an optical cavity. The degree of indistinguishability of photons emitted by the cavity is calculated as a function of the emitter-cavity coupling strength and the cavity linewidth. For a quantum emitter subject to strong pure dephasing, our calculations reveal that an unconventional regime of high indistinguishability can be reached for moderate emittercavity coupling strengths and high quality factor cavities. In this regime, the broad spectrum of the dissipative quantum system is funneled into the narrow lineshape of the cavity. The associated efficiency is found to greatly surpass spectral filtering effects. Our findings open the path towards on-chip scalable indistinguishable-photon emitting devices operating at room temperature.Indistinguishable single photons are the building blocks of various optically-based quantum information applications such as linear optical quantum computing [1, 2], boson sampling [3][4][5][6][7], quantum teleportation [8] or quantum networks [9]. Indistinguishable photons are usually generated either using parametric down conversion [10], or alternatively directly from a single two-level quantum emitter such as atoms, color centers, quantum dots or organic molecules [11][12][13][14][15][16][17][18][19][20]. Parametric down conversion is presently the most mature technology available, but the usual low efficiency of the nonlinear processes is a severe limitation to the scalability of such sources. On the other hand, sources based on single solid-state quantum systems have been greatly developped in the last decade, as they hold the promise to combine indistinguishable, on-demand, energy-efficient, electrically drivable and scalable characteristics. However, except at cryogenics temperature, solid-state systems emitting single-photons are subject to strong pure dephasing processes [21][22][23][24][25][26][27][28][29], making them at first view inappropriate for quantum applications requiring photon indistinguishability.A two-level quantum emitter (QE) coupled only to vacuum fluctuations should emit perfectly indistinguishable photons. However, as soon as pure dephasing of the QE occurs, the degree of indistinguishability of the emitted photons is reduced to [30]where γ = 1/T 1 is the population decay rate, γ * /2 = 1/T * 2 the pure dephasing rate, and 1/T 2 = 2/T 1 + 1/T 2 * the total dephasing rate. For solid-state QE emitting photons at room temperature such as color centers, quantum dots or organic molecules, pure dephasing rates are typically several orders of magnitude larger than the population decay rate (typically ranging from 3 to 6 orders of magnitude) [12,14,21,22,24,[26][27][28][29]31]. Hence the intrinsic indistinguishability given by Eq. 1 is almost zero. A possible way to enhance the indistinguishability is to spectrally filter the emitted photons a posteriori. However, this linear-filter strategy leads to a very low efficiency. Engin...

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Temperature dependent optical properties of self-organized InAs/GaAs quantum dots

Cited by 126 publications

References 28 publications

Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots

Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots

Temperature Dependent Photoluminescence from InAs/GaAs Quantum Dots Grown by Molecular Beam Epitaxy

Cavity-Funneled Generation of Indistinguishable Single Photons from Strongly Dissipative Quantum Emitters

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