Temperature-Dependent Modeling and Performance Evaluation of Multi-Walled CNT and Single-Walled CNT as Global Interconnects

Singh, Karmjit; Raj, Balwinder

doi:10.1007/s11664-015-4040-x

Cited by 26 publications

(10 citation statements)

References 20 publications

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“…The p.u.l. scattering resistance (r s,MWCNT ) of MWCNT [22,25,26] is calculated using Equation (6a), as…”

Section: Resistance Modelmentioning

confidence: 99%

“…The results demonstrate that as frequency increases, skin depth decreases, as the effective conductor surface area conducting current is reduced in all materials. Material-dependent parameters such as conductivity, MFP, and momentum relaxation time are taken from experimental results [1,[26][27][28][29][30].…”

Section: Skin-depth Analysismentioning

confidence: 99%

“…The p.u.l . scattering resistance ( r s,MWCNT ) of MWCNT [22, 25, 26] is calculated using Equation (), as

r_{s, M W C N T} = \frac{12.94 k Ω}{true \sum_{j = 1}^{N_{s h e l l}} λ_{e f f} N_{c h, j}}

where the p.u.l . scattering resistance ( r s,MLGNR ) of a single layer of GNR [12, 18] is calculated using Equation (), as

{r_{s}}_{,_{M L G N R}} = \frac{12.94 k Ω}{N_{c h} . λ_{e f f}}

where λ eff represents the effective MFP.…”

Section: Interconnect Modelmentioning

confidence: 99%

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Comparative radio‐frequency and crosstalk analysis of carbon‐based nano‐interconnects

Kaur

Gupta

Kumar

et al. 2021

IET Circuits, Devices & Syst

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A comparative radio-frequency (RF) and crosstalk analysis is performed on carbon nanointerconnects based on an efficient π-type equivalent single-conductor model of bundled multiwall carbon nanotubes (MWCNTs) and stacked multilayer graphene nanoribbons (MLGNRs). Simulation results are extracted using HSPICE for global-level nanointerconnects at the 14-nm node. RF performance is evaluated in terms of skin depth and a 3-dB bandwidth, while crosstalk performance is analysed in terms of crosstalk-induced delay and average power consumption. The skin-depth results indicate significant improvements in skin-depth degradation at higher frequencies for AsF 5-doped zigzag MLGNRs compared with that of Cu, nanotubes and MWCNTs. The transfer gain results explicitly demonstrate that AsF 5-doped MLGNRs exhibit excellent RF behaviour, showing 10-and 20-fold improvements over MWCNTs and copper (Cu), respectively. Further, the 3-dB bandwidth calculations for AsF 5-doped MLGNRs suggest 18.6-and 9.7-fold enhancement compared with Cu and MWCNTs at 1000 μm. Significant reductions are obtained in crosstalk-induced out-of-phase delays for AsF 5-doped MLGNRs-their delay values were 84.7% and 60.24% less than those for Cu and MWCNTs. Further, AsF 5-doped MLGNRs present the most optimal energy-delay product results, with values representing 98.6% and 99.6% improvements over their Cu and MWCNT counterparts at a global length of 1000 µm. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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“…The p.u.l. scattering resistance (r s,MWCNT ) of MWCNT [22,25,26] is calculated using Equation (6a), as…”

Section: Resistance Modelmentioning

confidence: 99%

Section: Skin-depth Analysismentioning

confidence: 99%

“…The p.u.l . scattering resistance ( r s,MWCNT ) of MWCNT [22, 25, 26] is calculated using Equation (), as

r_{s, M W C N T} = \frac{12.94 k Ω}{true \sum_{j = 1}^{N_{s h e l l}} λ_{e f f} N_{c h, j}}

where the p.u.l . scattering resistance ( r s,MLGNR ) of a single layer of GNR [12, 18] is calculated using Equation (), as

{r_{s}}_{,_{M L G N R}} = \frac{12.94 k Ω}{N_{c h} . λ_{e f f}}

where λ eff represents the effective MFP.…”

Section: Interconnect Modelmentioning

confidence: 99%

See 1 more Smart Citation

Comparative radio‐frequency and crosstalk analysis of carbon‐based nano‐interconnects

Kaur

Gupta

Kumar

et al. 2021

IET Circuits, Devices & Syst

Self Cite

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show abstract

“…crosstalk. [1][2][3][4][5][6][7] Advances in modern electrical technology scaling down cause decreasing space and increasing thickness to width ratio of interconnects, which contribute to increase the crosstalk effect among the lines. [8][9][10][11][12] As device feature size reduces to nanometer scale, single event transient (SET), which is induced by an energetic radiation particle striking the sensitive area of a device or circuit, might impact electronically unrelated multiple logic paths due to the crosstalk effect.…”

Section: Introductionsmentioning

confidence: 99%

Effect of temperature and single event transient on crosstalk in coupled single‐walled carbon nanotube (SWCNT) bundle interconnects

Liu

Li²,

et al. 2021

Circuit Theory & Apps

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Although they have better electrical and thermal properties, thermal issues have become an important challenge to design modern integrated circuits with single-walled carbon nanotube (SWCNT) bundle interconnects. The equivalent RLC model for SWCNT bundle interconnect is analyzed. Based on the proposed circuit for single event crosstalk (SEC), the influences of the length of line, nanotube diameter, metallic nanotube ratio, and technology node on SEC at different temperatures are studied. The potential impact mechanisms are also discussed. The simulation results show that, compared with one in copper line, peak voltage and pulse width of SEC in SWCNT interconnect are reduced by an average of 23.7% and 8.8%, respectively. The larger the diameter of SWCNT is or the more the ratio of metallic SWCNT is, the weaker the effect of SEC will be. With the increase of the length of line, the crosstalk effect will increase. The pulse width of SEC is more sensitive to the temperature when the length of line is longer. However, the peak voltage is more sensitive to the temperature when the length of line is shorter. As the technology node shrinks from 21 nm to 9.5 nm, the noise area of SEC increases from 0.55 V•ns to 1.89 V•ns, which results in that the crosstalk action time increases significantly.

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“…However, for a CNT as an interconnect, multi-walled CNTs give better performance over single-walled CNTs. 7 CNTFETs have been extensively studied and modeled for circuit application. With excellent electrical properties, high performance CNTFETs are being explored.…”

Section: Introductionmentioning

confidence: 99%

Circuit Compatible Model for Electrostatic Doped Schottky Barrier CNTFET

Singh

Khosla

Raj

2016

Journal of Elec Materi

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This paper proposes a circuit compatible model for electrostatic doped Schottky barrier carbon nanotube field effect transistor (ED-SBCNTFET). The proposed model is an extension of the Schottky barrier carbon nanotube field effect transistor (SBCNTFET) to ED-SBCNTFET by adding polarity gates, which are used to create electrostatic doping. In ED-SBCNTFET, electrostatic doping is responsible for a fermi level shift of source and drain regions. A mathematical relation has been developed between fermi level shift and polarity gate bias. Both current-voltage (I-V) and capacitance-voltage (C-V) characteristics have been efficiently modeled. The results are compared with the reported semi-classical model and simulations from NanoTCAD ViDES for validation. The proposed model is much faster than numerical models as it denies self consistent equations. Finally, circuit application is demonstrated by simulating inverter using the proposed model in HSPICE.

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Temperature-Dependent Modeling and Performance Evaluation of Multi-Walled CNT and Single-Walled CNT as Global Interconnects

Cited by 26 publications

References 20 publications

Comparative radio‐frequency and crosstalk analysis of carbon‐based nano‐interconnects

Comparative radio‐frequency and crosstalk analysis of carbon‐based nano‐interconnects

Effect of temperature and single event transient on crosstalk in coupled single‐walled carbon nanotube (SWCNT) bundle interconnects

Circuit Compatible Model for Electrostatic Doped Schottky Barrier CNTFET

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