Temperature-dependent minority carrier lifetime of crystalline silicon wafers passivated by high quality amorphous silicon oxide

Inaba, Masanori; Todoroki, Soichiro; Nakada, Kazuyoshi; Miyajima, Shinsuke

doi:10.7567/jjap.55.04es04

Cited by 4 publications

(6 citation statements)

References 33 publications

(30 reference statements)

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Section: Fig 2 Total Bonded Hydrogen Content (C H ) and (C H Sih2supporting

confidence: 83%

“…It was demonstrated by the results from previous study, DE v affects t eff and temperature-dependence of t eff , according to surface recombination model [16]. The behavior of t eff for different DE v shown in Figure 5 is qualitatively in good agreement with the result of the simulation in the previous study [16]. Although the effect of DE v on the temperature-dependence of t eff is similar to the result of the previous report, the temperatures corresponding to the maximum t eff , T(t max ), are different.…”

Section: Fig 2 Total Bonded Hydrogen Content (C H ) and (C H Sih2mentioning

confidence: 81%

“…The t eff was measured from a high temperature to minimize the effect of heat history of the c-Si wafer. The experimental details for the temperaturedependence of the t eff measurement are written elsewhere [16].…”

Section: Introductionmentioning

confidence: 99%

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Si surface passivation by using triode-type plasma-enhanced chemical vapor deposition with thermally energized film-precursors

Niikura

Shiratori

Miyajima

2020

Eur. Phys. J. Appl. Phys.

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We fabricated hydrogenated amorphous Si (a-Si:H) passivation layers on the surfaces of Si wafers by using triode-type plasma-enhanced chemical vapor deposition with gas-heating, and discussed high-quality surface passivation for Si heterojunction solar cells. The sample with the a-Si:H layers corresponding to the highest proportion of SiHx(x=2,3) content in SiHx(x=1–3) content exhibited the minimum surface recombination velocity (S) after annealing. This suggests that using SiHx(x=2,3)-rich a-Si:H grown at low-temperature as a passivation layer is advantageous to inhibit an epitaxial growth at the a-Si:H/crystalline Si interface, and that a structural relaxation of the a-Si:H takes place during post-deposition annealing, drastically improving passivation quality. Also, the importance to use a low Tsub and to optimize gas-heating and the triode technique, for obtaining simultaneously higher film quality and abrupt interface, is suggested. Low S obtained for our unoptimized samples implies the potency of this deposition technique. Nevertheless, further studies are needed to elucidate the impact of gas-heating and the triode technique on Si surface passivation. Temperature-dependent effective carrier lifetime for our samples might suggest relatively large electron affinity for an a-Si:H, which might be one possible reason for high-quality surface passivation.

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Section: Fig 2 Total Bonded Hydrogen Content (C H ) and (C H Sih2supporting

confidence: 83%

Section: Fig 2 Total Bonded Hydrogen Content (C H ) and (C H Sih2mentioning

confidence: 81%

See 1 more Smart Citation

Si surface passivation by using triode-type plasma-enhanced chemical vapor deposition with thermally energized film-precursors

Niikura

Shiratori

Miyajima

2020

Eur. Phys. J. Appl. Phys.

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“…On the other hand, large temperature dependence was observed from the sample with small optical bandgap, whose eff significantly decreased with increasing the measurement temperature. According to the previous report, the difference in the temperature-dependence of eff for a-SiOx:H was explained by the difference in valence band offset [7]. Therefore, it is expected that our samples also have different valence band offsets.…”

Section: Resultsmentioning

confidence: 57%

“…We have investigated i-a-Si:H deposition using FTS [4,5,6], however, its properties are not clearly understood yet. [7]. They reported that the temperature dependence of eff is strongly influenced by the properties of the passivation layer, especially by its bandgap.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Amorphous Silicon Passivation Layer Deposited by Facing Target Sputtering Using Temperature-Dependent Minority Carrier Lifetime Measurement

Shiratori¹

2017

Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials

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We investigated the temperature dependence of the effective minority carrier lifetime (eff) of crystalline silicon (c-Si) passivated by intrinsic amorphous silicon (i-a-Si:H) deposited by facing target sputtering method. The i-a-Si:H shows good passivation quality at room temperature and a small surface recombination velocity of 7.48 cm/s has been achieved. We found that temperature dependence of eff is influenced by deposition condition. The i-a-Si:H with smaller bandgap shows reduction of eff at high temperatures. This reduction is due to the valence band offset at the i-a-Si:H/c-Si interface.

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A Review: Application of Doped Hydrogenated Nanocrystalline Silicon Oxide in High Efficiency Solar Cell Devices

Qiu,

Lambertz,

Duan

et al. 2024

Advanced Science

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Due to the unique microstructure of hydrogenated nanocrystalline silicon oxide (nc‐SiOx:H), the optoelectronic properties of this material can be tuned over a wide range, which makes it adaptable to different solar cell applications. In this work, the authors review the material properties of nc‐SiOx:H and the versatility of its applications in different types of solar cells. The review starts by introducing the growth principle of doped nc‐SiOx:H layers, the effect of oxygen content on the material properties, and the relationship between optoelectronic properties and its microstructure. A theoretical analysis of charge carrier transport mechanisms in silicon heterojunction (SHJ) solar cells with wide band gap layers is then presented. Afterwards, the authors focus on the recent developments in the implementation of nc‐SiOx:H and hydrogenated amorphous silicon oxide (a‐SiOx:H) films for SHJ, passivating contacts, and perovskite/silicon tandem devices.

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Temperature-dependent minority carrier lifetime of crystalline silicon wafers passivated by high quality amorphous silicon oxide

Cited by 4 publications

References 33 publications

Si surface passivation by using triode-type plasma-enhanced chemical vapor deposition with thermally energized film-precursors

Si surface passivation by using triode-type plasma-enhanced chemical vapor deposition with thermally energized film-precursors

Characterization of Amorphous Silicon Passivation Layer Deposited by Facing Target Sputtering Using Temperature-Dependent Minority Carrier Lifetime Measurement

A Review: Application of Doped Hydrogenated Nanocrystalline Silicon Oxide in High Efficiency Solar Cell Devices

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