Temperature dependent magnetic properties of Co1+xTxFe2−2xO4 (T = Zr, Ti)

Monaji, Vinitha Reddy; Indla, Srinivas; Rayaprol, Sudhindra; Sowmya, Shara; Srinivas, A.; Das, Dibakar

doi:10.1016/j.jallcom.2017.01.061

Cited by 19 publications

(1 citation statement)

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“…The increased coercivity might also be associated with the existence of the second phase on or close to grain walls that limited the movement of domain walls [31]. The value of remanence ratio R less than 1 showed that structure belong to a single domain structure [32]. The electrical resistivity values of the synthesized samples were determined by the 2 probe currentvoltage technique and the obtained I-V curves were presented in Figure 4.…”

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confidence: 99%

The Impact of Highly Paramagnetic Dy3+ Cations On Magnetic and Electrical Behaviour of Nanocrystalline Mnfe2o4

Baig

Zulfiqar

Yousuf

et al. 2021

Preprint

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In this paper, the detailed study of magnetic properties of Dy3+ substituted soft manganese ferrite (MnFe2O4) nanoparticles with varied contents of Dy3+ ions (0.00 ≤ x ≤ 0.16) was carried out by vibrating sample magnetometery (VSM) at room temperature. The synthesis of reported magnetic materials was carried out via facile wet chemical route. Structural characterization was investigated via X-ray diffraction and infra-red spectroscopy. Exploration of magnetic measurements revealed an irregular behavior in the values of saturation magnetization (Ms), remanent magnetization (Mr), and coercivity (Hc) depending upon the concentration of rare-earth ions (Dy3+). The fluctuations in the values of Ms, Mr, and Hc may be associated with the modifications in the spin-exchange interactions caused by structural changes due to the substitution of rare-earth ions (Dy3+). DC electrical resistivity values were recorded and were found to be increased with increased Dy3+ contents. The soft magnetic nature of Dy3+ substituted MnFe2O4 spinel ferrites nanoparticles suggested their possible utilization in switching mode power supplies, recording media, spintronics, and many other advanced technological devices.

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confidence: 99%