Temperature-dependent magnetic and resistive switching phenomena in (La,Ba)MnO3/ZnO heterostructure

Light‐Enhanced Negative Differential Resistance and Multi‐Level Resistive Switching in Glutamine‐Functionalized MoS2 Quantum Dots for Resistive Random‐Access Memory Devices

“…[4] In recent years, much attention has been devoted to designing advanced structures with different functionality to improve the RS effect via temperature, light, and magnetic field control. [5][6][7][8] For example, the RS effect with La 0•7 Ba 0•3 MnO 3 /ZnO bilayers has been investigated at different temperatures. A strong temperature-induced RS transformation was observed, originating from the phase-separated state of manganite.…”

“…A strong temperature-induced RS transformation was observed, originating from the phase-separated state of manganite. [5] For the light-controlled resistive switching, different configurations using various nanostructures such as semiconductor quantum dots (QDs), nanorods, and metal-insulatorsemiconductor architectures have been investigated. [9,10] The optical control of localized charges on InAs QDs in a modulation-doped GaAs/AlGaAs heterostructure has been studied.…”