Temperature-dependent growth of zinc oxide thin films grown by metal organic chemical vapor deposition

Chen, X.L.; Geng, Xin; Xue, Junming; Zhang, D.K.; Hou, Guofu; Zhao, Ying

doi:10.1016/j.jcrysgro.2006.08.028

Cited by 57 publications

(21 citation statements)

References 20 publications

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“…This result is different from that of the Ref. [10], in which the crosssection SEM image of the ZnO film directly deposited by MOCVD presents the granular structure. We think that the textured morphology of ZnO/ITO films results from the ITO seed layer.…”

Section: Methodscontrasting

confidence: 99%

Two-step growth of ZnO films with high conductivity and high roughness

Chen

Geng

Xue

et al. 2007

Journal of Crystal Growth

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Section: Methodscontrasting

confidence: 99%

Two-step growth of ZnO films with high conductivity and high roughness

Chen

Geng

Xue

et al. 2007

Journal of Crystal Growth

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“…In fact, such a variation in the PO at different temperatures has already been reported in the literature for MOCVD and sputtered grown ZnO. [19][20][21] To have a better understanding of the different phenomena that could lead to such growth rate anisotropy in our case, we present a schematic drawing of the situation for different T growth values in Figure 4. In this figure, two initial clusters are considered with different crystallographic orientations parallel to the substrate surface, nonminimum surface free energy (NMSE) and minimum surface free energy (MSE) planes.…”

Section: Resultsmentioning

confidence: 55%

Growth Model of MOCVD Polycrystalline ZnO

Nicolay

Faÿ

Ballif

2009

Crystal Growth & Design

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A growth model for the low pressure chemical vapor deposition (LPCVD) of polycrystalline ZnO thin films is proposed. This model is based on experimental observations of the surface morphology and crystallographic orientations of the layers at different thicknesses and growth temperatures. It is shown that the films preferred orientation evolves from c-axis to aaxis as the growth temperature is increased from 110 to 220°C and then goes back to c-axis at 380°C. At the same time, when the film thickness increases, the surface morphology evolves from small rounded grains to large pyramids at a growth temperature of 150°C. The selection of various preferential orientations under different deposition conditions is attributed to growth competition between clusters initially formed with different crystallographic orientations.

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“…The films deposited on glass are found to be c-axis oriented, while the films on silicon show preferred a-and b-axis orientation. The majority of work reported about ZnO films is with c-axis orientation, and only rarely with a-and b-axes orientation [20]. However, our experiments suggest that it is also possible to grow ZnO films with a-and b-axes orientation via low-cost spray pyrolysis technique, which have applications in thin film Si solar cells.…”

Section: Introductionmentioning

confidence: 78%