Temperature‐dependent growth and characterization of N‐polar InN films by molecular beam epitaxy

Wang, Xinqiang; Che, Song-Bek; Ishitani, Yoshihiro; Yoshikawa, Akihiko

doi:10.1002/pssb.200565145

Cited by 6 publications

(3 citation statements)

References 12 publications

(11 reference statements)

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“…The insensitivity of TD density on growth conditions for N-face InN was in contrast with other reports on N-face InN 39 and to the effect that growth conditions had on In-face InN. The lower growth temperatures necessary for In-face InN growth likely resulted in lower adatom mobility during growth than for the N-face InN samples grown at higher temperatures.…”

Section: Resultscontrasting

confidence: 85%

Evaluation of threading dislocation densities in In- and N-face InN

Gallinat

Koblmüller

et al. 2010

Journal of Applied Physics

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The threading dislocation ͑TD͒ structure and density has been studied in In-and N-face InN films grown on GaN by plasma-assisted molecular beam epitaxy. The TD densities were determined by nondestructive x-ray diffraction rocking curve measurements in on-axis symmetric and off-axis skew symmetric geometries and calibrated by transmission electron microscopy measurements. TD densities were dominated by edge-type TDs with screw-component TDs accounting for less than 10% of the total TD density. A significant decrease in edge-type TD density was observed for In-face InN films grown at increasingly higher substrate temperatures. In-face InN films grown with excess In exhibited lower TD densities compared to films grown under N-rich conditions. The edge-type TD density of N-face InN films was independent of substrate temperature due to the higher allowable growth temperatures for N-face InN compared to In-face InN. TD densities in In-face InN also showed a strong dependence on film thickness. Films grown at a thickness of less than 1 m had higher TD densities compared with films grown thicker than 1 m. The lowest measured TD density for an In-face InN film was ϳ1.5ϫ 10 10 / cm 2 for 1 m thick films.

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Section: Resultscontrasting

confidence: 85%

Evaluation of threading dislocation densities in In- and N-face InN

Gallinat

Koblmüller

et al. 2010

Journal of Applied Physics

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“…Further complicating deposition conditions is the growth temperature dependence on crystal polarityIn-face ͑0001͒ InN is limited to growth temperatures below ϳ540°C, 3,21-24 while N-face ͑0001͒ InN can be grown almost 100°C hotter. 4,[25][26][27] Similar to the other III-nitrides, 28,29 InN has a clear surface morphology dependence on substrate temperature and III/V ratio during plasma-assisted molecular beam epitaxy ͑PAMBE͒ growth. 3,4,27 Films grown with excess In exhibit step-flow growth characteristic spiral hillocks, while those grown under N-rich conditions have rough, facetted surfaces.…”

Section: Introductionmentioning

confidence: 97%

A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN

Gallinat

Koblmüller

Brown

et al. 2007

Journal of Applied Physics

129

105

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We investigated the role of temperature and In∕N flux ratios to determine suitable growth windows for the plasma-assisted molecular beam epitaxy of In-face (0001) InN. Under vacuum, InN starts decomposing at 435°C as defined by the release of N2 from the InN crystal and a buildup of an In adlayer and liquid In droplets on the sample surface. At temperatures greater than 470°C, InN decomposition was characterized by a release of both In vapor and N2 in the absence of a significant accumulation of an In adlayer. No growth was observed at substrate temperatures above 500°C or at temperatures in which the decomposition rates were higher than the growth rates. A growth diagram was then constructed consisting of two growth regimes: the “In-droplet regime” characterized by step-flow growth and relatively flat surfaces and the “N-rich regime” characterized by rough, three-dimensional surfaces. The growth diagram can then be used to predict the surface structure of films grown at varying substrate temperatures and In fluxes. A 2.5 monolayer In adlayer was observed during In-droplet growth, suggesting that an In wetting layer was necessary for step-flow growth.

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“…A 2-µm-thick InN film was grown on 𝑐-plane sap-phire with a GaN buffer layer to reduce the mismatch between the substrate and the InN layer by MBE. [7] RBS/C is a powerful technique for directly and nondestructively characterizing the composition, thickness, crystalline quality and interface of films. [8,9] In this work, a collimated 2.023 MeV He + beam produced by a 5SDH-2 Pelletron accelerator was used for the RBS/C measurements.…”

mentioning

confidence: 99%

Dislocation and Elastic Strain in an InN Film Characterized by Synchrotron Radiation X-Ray Diffraction and Rutherford Backscattering/Channeling

Cheng

Wang

et al. 2012

Chinese Phys. Lett.

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Dislocation information and strain-related tetragonal distortion as well as crystalline qualities of a 2-µm-thick InN film grown by molecular beam epitaxy (MBE) are characterized by Rutherford backscattering/channeling (RBS/C) and synchrotron radiation x-ray diffraction (SR-XRD). The minimum yield 𝜒min=2.5% deduced from the RBS/C results indicates a fairly good crystalline quality. From the SR-XRD results, we obtain the values of the screw and edge densities to be 𝜌screw = 7.0027 × 10 9 and 𝜌 edge = 8.6115 × 10 9 cm −2 , respectively. The tetragonal distortion of the sample is found to be −0.27% by angular scans, which is close to the −0.28% derived by SR-XRD. The value of |𝑒 ⊥ /𝑒 ‖ | = 0.6742 implies that the InN layer is much stiffer along the 𝑎 axis than that along the 𝑐 axis, where 𝑒 ‖ is the parallel elastic strain, and 𝑒 ⊥ is the perpendicular elastic strain. Photoluminescence results reveal a main peak of 0.653 eV with the linewidth of 60 meV, additional shoulder band could be due to impurities and related defects.

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Temperature‐dependent growth and characterization of N‐polar InN films by molecular beam epitaxy

Cited by 6 publications

References 12 publications

Evaluation of threading dislocation densities in In- and N-face InN

Evaluation of threading dislocation densities in In- and N-face InN

A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN

Dislocation and Elastic Strain in an InN Film Characterized by Synchrotron Radiation X-Ray Diffraction and Rutherford Backscattering/Channeling

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