Temperature dependent electrical and dielectric properties of Sn/p-Si metal–semiconductor (MS) structures

The electrical modulus and other dielectric properties by the impedance spectroscopy of LaCrO3and LaCr0.90Ir0.10O3perovskites

“…The long-range fundamental conductivity results in exact overlapping of the modulus and impedance peaks. [24][25][26][29][30][31][32][33][34] Especially, the investigation of electrical properties of these materials 27,28 can provide us an insight for their application in sensors, optical memory, electro-optic devices and actuations in the microelectromechanical systems etc.…”

AC Conductivity and Dielectric Relaxation Behavior of Sb2S3 Bulk Material

“…4 The dielectric relaxation spectroscopy (DRS) gives evidence about the orientation and translation adjustment of the mobile charges presented in the dielectric medium. [5][6][7][8][9] The energy transferred to the dielectric material is not only a function of the applied electric field but also depends on the physical properties of material. 8,9 The contributions of dielectric polarization components such as electronic, ionic and orientational polarization are responsible for the variation of the dielectric constant values.…”

Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures

“…5) increases with increasing frequency at a given bias voltage. The capacitance value decreases with increasing frequency because the charge at the interface states cannot follow the ac signal at sufficiently high frequencies [14][15][16][17][18][19][20][21][22][33][34][35][36][37][38][39][40][41][42][43][44]. As can be seen from Fig.…”

“…The series resistance can cause a serious error in the extraction of the interfacial properties. To avoid this error, a correction should be applied to the measured admittance before the desired information is extracted [14][15][16][17][18][19][33][34][35][36][37][38][39][40][41][42][43]. The series resistance R s and the interfacial layer capacitance C 0x for the MOS structure can be calculated using the following equations [16]:…”