Temperature dependent dielectric studies of Al/Dy2O3/porous Si heterostructure by capacitance and conductance measurements

Cherif, A.; Jomni, S.; Saghrouni, H.; Belgacem, Walid; Khirouni, K.; Béji, Lotfi

doi:10.1016/j.jallcom.2016.05.267

Cited by 5 publications

(3 citation statements)

References 43 publications

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“…Similarly, the reason of the variations on the V so in figure 2 is also due to the contribution of the D it,ac states at lower frequencies. Cherif et al [47] have calculated the two different activation energies for the possible two distinct trap states from Arrhenius plot via temperature dependent conductance curves. The observed two conductance peaks in this study may be the signals from these two different activation energies calculated in previous study in the literature [47].…”

Section: Resultsmentioning

confidence: 99%

“…Cherif et al [47] have calculated the two different activation energies for the possible two distinct trap states from Arrhenius plot via temperature dependent conductance curves. The observed two conductance peaks in this study may be the signals from these two different activation energies calculated in previous study in the literature [47]. The possible trap sites that correlated with the observed conductance peak are also discussed in the XPS analysis in the further section.…”

Section: Resultsmentioning

confidence: 99%

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A detailed study on frequency dependent electrical characteristics of MOS capacitors with dysprosium oxide gate dielectrics

Kaya¹,

Yılmaz²

2019

Semicond. Sci. Technol.

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Frequency dependent electrical characteristics of Al/Dy 2 O 3 /p-Si/Ag MOS capacitors have been systematically investigated incorporating interfacial chemical structures of the capacitors to specify where interface state signals arise from. The results show that capacitance (C) increases with decreasing in the applied voltage frequency due to the response time dependency of the interface states. Conductance (G) curves have a single peak at the relatively high frequencies as expected. Interestingly, the G curves exhibit two distinct peaks at 400 kHz and lower frequencies. These G peaks are associated with acceptor-like interface (D it,ac ) and donor-like interface (D it,dn ) states. Electrochemical analysis has also depicted that non-stoichiometric DySiO x and SiO x bonds are present at the interface between Dy 2 O 3 /Si gate stack. Owing to interactions between mobile charge carriers and possible defect sites present at the DySiO x and SiO x , the D it,ac and D it,dn signals have been observed at G curves. In addition, the C hysteresis loop widths decrease with decreasing in the voltage frequencies due to opposite polarity and response time dependencies of the D it,ac and D it,dn states. The oxide, interface and border trap densities of capacitors exhibit slight frequency variations and their orders are comparable with device used in the state of the art microelectronics technologies. On the other hand, barrier potential varies from 0.97 eV to 1.136 eV depending on the voltage frequencies. Leakage current density was found to be 1.61×10 −7 Acm −2 at −1 V and Fowler-Nordheim tunneling mechanism dominates the leakage current conduction. Considering to these results, it can be concluded that the Dy 2 O 3 shows promising dielectric and insulating behavior for the application in future microelectronics technology.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

A detailed study on frequency dependent electrical characteristics of MOS capacitors with dysprosium oxide gate dielectrics

Kaya¹,

Yılmaz²

2019

Semicond. Sci. Technol.

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show abstract

“…The behavior of the G-f characteristics is related to the long-range ordering which involving a translational motion with a sudden hopping [16]. The origin of the conductance stayed in the relaxation phenomena and when a mobile charge carrier hopped from origin to a new position, the charge remained in the state of displacement between two molecules, which then forming the hopping conductivity [30]. The Cf characteristics indicated a decrease of the capacitance values as the frequency was increased (< 100 Hz) and it remained constant at the high frequency range (> 10 kHz).…”

Section: Frequency Dependent Conductance and Capacitancementioning

confidence: 99%

Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diode

et al. 2017

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Abstract.A metal-organic-metal (MOM) type Schottky diode based on poly (triarylamine) (PTAA) thin films has been fabricated by using the spin coating method. Investigation of the frequency dependent conductance-voltage (G-V-f) and capacitance-voltage (C-V-f) characteristics of the ITO/PTAA/Al MOM type diode were carried out in the frequency range from 12 Hz to 100 kHz using an LCR meter at room temperature. The frequency and bias voltage dependent electrical response were determined by admittancebased measured method in terms of an equivalent circuit model of the parallel combination of resistance and capacitance (RC circuit). Investigation revealed that the conductance is frequency and a bias voltage dependent in which conductance continuous increase as the increasing frequency, respectively. Meanwhile, the capacitance is dependent on frequency up to a certain value of frequency (100 Hz) but decreases at high frequency (1 -10 kHz). The interface state density in the Schottky diode was determined from G-V and C-V characteristics. The interface state density has values almost constant of 2.8 x 10 12 eV -1 cm -2 with slightly decrease by increasing frequencies. Consequently, both series resistance and interface trap density were found to decrease with increasing frequency. The frequency dependence of the electrical responses is attributed the distribution density of interface states that could follow the alternating current (AC) signal.

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Determining electrical and dielectric parameters of Al/ZnS-PVA/p-Si (MPS) structures in wide range of temperature and voltage

Baraz

Yücedağ

Azizian‐Kalandaragh

et al. 2018

J Mater Sci: Mater Electron

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Temperature dependent dielectric studies of Al/Dy2O3/porous Si heterostructure by capacitance and conductance measurements

Cited by 5 publications

References 43 publications

A detailed study on frequency dependent electrical characteristics of MOS capacitors with dysprosium oxide gate dielectrics

A detailed study on frequency dependent electrical characteristics of MOS capacitors with dysprosium oxide gate dielectrics

Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diode

Determining electrical and dielectric parameters of Al/ZnS-PVA/p-Si (MPS) structures in wide range of temperature and voltage

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