Temperature-Dependent Current-Voltage Characteristics of Al-Doped Mg_xZn_1-xO/AlGaNn-pJunction Diodes

Abstract

This study investigated the temperature dependence of the current-voltage (I-V) characteristics of Al-doped MgxZn1-xO/p-AlGaN junction diodes. The n-type Al-doped MgxZn1-xO (AMZO) films were deposited on p-AlGaN using a radio-frequency (rf) magnetron sputtering system followed by annealing at 700, 800, and 900°C in a nitrogen ambient for 60 s. The n-AMZO/p-AlGaN diode at a substrate temperature of 25°C showed the lowest leakage current in reverse bias. The n-AMZO/p-AlGaN diode with an AMZO annealed at 900°C demonstrated the lowest reverse leakage current. The temperature sensitivity coefficients of the I-V characterizations were obtained at different substrate temperatures (25, 50, 75 100, and 125°C), providing extracted values of 6.4, 7.6, and 5.6 mV/°C in forward bias and −20, 5.6, and 0.8 mV/°C in reverse bias for the AMZO films annealed at 700, 800, and 900°C, respectively. The n-AMZO/p-AlGaN junction diode fabricated with AMZO annealed at 900°C demonstrated the lowest temperature dependence. In addition, the light emission was derived from the forward-biased junction, and near-ultraviolet light emission was evident at all of the p-n diodes. Based on these findings, the n-AMZO/p-AlGaN diodes are suitable for GaN-based heterojunction bipolar transistors (HBTs) and near-ultraviolet light-emitting diodes (LEDs).

Temperature dependence of electrical characteristics of n-In Ga1−N/p-Si hetero-junctions made totally by RF magnetron sputtering

“…(3)) and dV/d(lnI)-I (Eq. (4)) plots in the forward bias, could be related to the presence of series resistance, interface states, and the voltage drop across the interfacial layer [24,25]. There is also a clear trend of decreasing the series resistances R s with the increased indium content and a rise in the testing temperature.…”

“…The current density was 0.38 A·cm − 2 at 8 V and the breakdown voltage was~20 V [2]. Hsueh et al investigated the temperature dependence of the current-voltage characteristics of n-Mg x Zn 1 − x O/p-GaN hetero-junction diodes, the extracted ideality factors were in the range of 3.86-7.00, decreasing with an increase in the testing temperature (25-125°C) [25]. Keskenler et al studied the Ag/n-ZnO/p-Si/Al hetero-junction diode.…”

Effect of Temperature Dependence on Electrical Characterization of <i>p-n</i> GaN Diode Fabricated by RF Magnetron Sputtering

“…In the other paper, they also investigated the I-V characteristics at different testing temperatures for Al-doped Mg x Zn 1-x O/AlGaN junction diodes with Mg-ZnO made by RF sputtering on the MOCVD-grown AlGaN. The extracted ideality factors were found in the range of 5.04 -15.90, decreasing as the testing temperature increased from 25˚C to 125˚C [22]. Mohd Yusoff et al described the growth and characterization of p-n junction diode based on GaN grown on Si (111) [10].…”

Temperature-dependent electrical properties of the sputtering-made n-InGaN/p-GaN junction diode with a breakdown voltage above 20V

“…(4)) plots in the forward bias. This difference could be related to the presence of series resistance, interface states, and the voltage drop across the interfacial layer [22,23]. A good diode is expected not to be temperature dependent in ideality factor.…”

“…After I-V measurement at RT, they reported that the barrier height and ideality factor were 0.63 70.02 eV and 4.0 70.3, respectively [5]. Hsueh et al investigated the temperature dependence of the currentvoltage characteristics of n-Mg x Zn 1À x O/p-GaN hetero-junction diodes, the extracted ideality factors n were in the range of 3.86-7.00, decreasing with an increase in the testing temperature (25-125 1C) [22]. They also investigated the I-V characteristics at different testing temperatures for Al-doped Mg x Zn 1À x O/AlGaN junction diodes with n-Mg-ZnO made by RF sputtering on the MOCVD-grown p-AlGaN.…”