Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film

de Oliveira, Fernando M.; Li, Chen; Ghosh, Pijush K.; Kuchuk, Andrian V.; Ware, Morgan E.; Mazur, Yuriy I.; Salamo, Gregory J.

doi:10.1116/6.0002866

Cited by 1 publication

(1 citation statement)

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“…The representative Raman spectra along the range of the E 2 (High) mode of the InN films are shown in Figure a. The data were acquired in a backscattering geometry at room temperature using a Si detector and a 632.8 nm He–Ne laser, resulting in a probing depth of about ∼160 nm into the top InN layer of each sample . The E 2 (High) phonon mode of InN of samples S1, S2, and S3 is observed at 493.4, 493.9, and 494.1 cm –1 , with fwhm values of 7.71, 4.19, and 4.78 cm –1 , respectively.…”

Section: Resultsmentioning

confidence: 99%

Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer

Shetty,

Kuchuk,

Maia de Oliveira

et al. 2024

Crystal Growth & Design

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High-quality InN has significant opportunities for exciting and impactful electronic and photonic applications. These applications rely on growth techniques that produce high-quality InN thin films. To achieve the fabrication of InN semiconductor thin films with a low density of misfit and threading dislocations, we report on a growth technique that utilizes composition and strain gradients to limit the propagation of defects into InN grown on a GaN/sapphire substrate. The growth technique we have investigated utilizes a compressively strained gradient transition layer to limit the propagation of threading dislocations from the GaN buffer. Reflection high-energy electron diffraction, high-resolution X-ray diffraction, Raman spectroscopy, photoluminescence, and Hall measurements were employed to evaluate the effectiveness of the gradient transition layer to improve the quality of InN thin films. The outcome is that for InN films grown on partially graded In x Ga 1−x N (x → 0 to 29%), when compared with InN grown directly on a GaN substrate, we observed about a 40% decrease in edge dislocations, a 50% increase in photoluminescence, and a 20% increase in mobility. When compared to a sharp strain boundary, a linear strain gradient offers threading dislocations the opportunity to reduce the energy of the system more by leaving the system than by propagating into the strained region.

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Section: Resultsmentioning

confidence: 99%