Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET

Ji, Shiqi; Zheng, Sheng; Wang, Fei; Tolbert, Leon M.

doi:10.1109/tpel.2017.2723601

Cited by 112 publications

(36 citation statements)

References 34 publications

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“…21 and Fig. 22 for a 5.5 kW engine specifically exchanged to an elective source whose phase angle lags behind the remaining voltage point of 180º and 240º [82][83][84][85]. It is important to say that the transient and peak values of the stator current are diversified.…”

Section: B Inrush Current Analysis Of Direct Fast Transfermentioning

confidence: 99%

Review on Solid-State Transfer Switch Configurations and Control Methods: Applications, Operations, Issues, and Future Directions

et al. 2020

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Solid-state transfer switch (SSTS) becomes the most crucial technology for electric power transmission, distribution and control system. SSTS is useful in supplying the power to sensitive loads uninterruptedly and critical loads economically and efficiently. However, a few concerns could hamper the effectiveness of SSTS including voltage swell, sag, inappropriate structure, poor power factor and inefficient control methods. Hence, this paper comprehensively surveys the diverse SSTS topologies, applications, operations, issues, and future directions. The SSTS configuration, design, control system, benefits and shortcomings are discussed rigorously. A detailed comparative analysis of various SSTS are carried out concerning topologies, control operations and applications. In line with that, the different control models and schemes are narrated briefly. This paper also highlights existing challenges and issues before providing a few important future prospects to enhance the configuration and efficiency of SSTS. All the key information obtained from this review would be beneficial to the researchers and power system engineers to develop an advanced and efficient SSTS toward future performance enhancement.

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Section: B Inrush Current Analysis Of Direct Fast Transfermentioning

confidence: 99%

Review on Solid-State Transfer Switch Configurations and Control Methods: Applications, Operations, Issues, and Future Directions

et al. 2020

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“…Consequently, the voltage slope during turn-off is mainly determined by the load current i L and the output capacitances C oss of the semiconductors. The output capacitances C oss of the 10 kV SiC MOSFETs are highly non-linear and range from 16 nF at u DS = 1 V to 100 pF at u DS = 2.5 kV (34) . At u DS = 1 kV, C oss equals approximately 160 pF.…”

Section: Zero-voltage Switchingmentioning

confidence: 99%

Design Challenges of SiC Devices for Low- and Medium-Voltage DC-DC Converters

et al. 2019

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Silicon carbide (SiC) devices are considered as key enablers for the development of highly efficient and compact dc-dc converters for low-and medium-voltage applications. Besides their high temperature capability and low conduction losses, they provide superior switching characteristics. This paper emphasizes the design challenges of SiC devices in the low-and medium-voltage ranges arising from their fast switching speeds. First, detailed measurement results on the switching characteristics of 1200 V SiC devices and the different leakage inductances are presented. The results are assessed with regard to the switching losses as well as the transient voltage and current overshoots. The impact on the switching behavior as a function of leakage inductances is shown. The leakage inductances also influence the resonance frequency of the power module and dc-dc converters. The determination of the size of the EMI filters is a crucial design aspect. Its significance is demonstrated using an 800 V dc-dc converter with commercially available SiC MOSFETs. In addition, zero-voltage switching is emphasized to reduce the impact of the parasitic elements of the module on the switching behavior. However, the performance of 10 kV SiC MOSFETs in a medium-voltage dc-dc converter shows that a significant amount of commutation energy is required to ensure a successful soft-switching transition.

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“…Some researchers have analysed the temperature dependency of a dynamic parameter, d I /d t , of SiC MOSFET [11]. The temperature‐dependent characterisation of saturation current, output characteristics and antiparallel diode of 10 kV SiC MOSFET have also been studied by simulation [12]. However, it has not been further studied in the literatures that how temperature changes can have an indirect effect on device or chip losses through different parameters.…”

Section: Introductionmentioning

confidence: 99%

Analytical model for predicting the junction temperature of chips considering the internal electrothermal coupling inside SiC metal–oxide–semiconductor field‐effect transistor modules

Sun

Zhao

Cai

et al. 2020

IET Power Electronics

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Owing to their excellent characteristics, silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor modules are expected to have broad application prospects in various types of power conversion equipment in the future. Accurate prediction of the internal chip junction temperature of SiC module is of great value for the usage of the modules in the power conversion equipment. In this study, taking the electrothermal coupling process, and the thermal characteristics of the chips into consideration, the power loss model under unipolar and bipolar sinusoidal pulse-width modulation control was developed. A star-shaped equivalent thermal network model based on virtual temperature was established. Moreover, an analytical junction temperature predicting model was proposed. To obtain the temperature dependence of static and dynamic parameters for the models, power device analyser was used, and the double pulse test bench was established. To validate the effectiveness and accuracy of the above models, the finite element method was used to calculate the junction temperature of a commercial 1200 V/300 A full SiC module under different working conditions. The results show that the relative error is very small and the proposed model is effective.

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Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET

Cited by 112 publications

References 34 publications

Review on Solid-State Transfer Switch Configurations and Control Methods: Applications, Operations, Issues, and Future Directions

Review on Solid-State Transfer Switch Configurations and Control Methods: Applications, Operations, Issues, and Future Directions

Design Challenges of SiC Devices for Low- and Medium-Voltage DC-DC Converters

Analytical model for predicting the junction temperature of chips considering the internal electrothermal coupling inside SiC metal–oxide–semiconductor field‐effect transistor modules

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