Temperature-dependent characteristics of n-channel transistors based on 5,5′-bithiazolidinylidene-2,4,2′,4′-tetrathiones

Ryo, Suho; Yoo, Dongho; Iijima, Kazutoshi; Sato, Ryo; Gal, Yann Le; Lorcy, Dominique; Mori, Takehiko

doi:10.1039/c9nj02731a

Cited by 6 publications

(9 citation statements)

References 34 publications

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“…From the Arrhenius plot, E a σ is estimated to be about 0.1 eV (Figure c). E a σ diverges toward the threshold voltage, consistent with the previous results. − Although mobilities are several times different depending on samples 1–3, E a σ is not largely different, suggesting that E a σ is related to a more intrinsic property of semiconductors like the typical trap level or polaron …”

Section: Resultssupporting

confidence: 89%

Temperature Dependence of Field-Effect Thermoelectric Power in Rubrene Crystals

2020

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Gate-induced carrier concentration dependence of electrical conductivity σ and thermoelectric power S of rubrene crystals is investigated down to low temperatures (T) using laser heating, and the relations between σ and S are discussed using the T dependence. With lowering T, σ decreases gradually, but S is basically metal like, though activated S ∝ E a S/T dependence appears at low V G. The logarithmic S ∝ ln σ relation is valid at respective T, where the slope is T independent and related to the ratio of S and σ activation energies E a S/E a σ. According to Lang’s method, the low-energy trap density of states is estimated from E a S. Following Kang and Snyder, the V G-dependent Fermi energy E F is determined from S in the S ∝ T region. When s in the power law S ∝ σ–1/s does not depend on T, the T-dependent transistor characteristics given by a two-variable function σ(V G, T) is separated into a product of V G-dependent and T-dependent parts.

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Section: Resultssupporting

confidence: 89%

Temperature Dependence of Field-Effect Thermoelectric Power in Rubrene Crystals

2020

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“…This logarithmic plot is usually approximated by an exponential form, N ( E ) = N G exp[( E – E c )/ k B T G ] ( k B : Boltzmann constant). Accordingly, the number of deep trap states decreases exponentially with N G = 10 14 cm –2 eV –1 and T G = 1500 K. − …”

Section: Results and Discussionmentioning

confidence: 61%

“…The extrapolations from the linear regions also cross around zero, indicating the bulk conduction is not significant. Although ordinary single-molecular ambipolar materials have large off regions, sometimes as large as V T e – V T h > 100 V, V T e = V T h has been observed in many charge-transfer cocrystals , and donor–acceptor polymers. , From the single-crystal to the thin-film transistors, the sample thickness decreases from 2.5 μm to 50 nm. On the basis of eq , the bulk sheet conductivity decreases to 1/50.…”

Section: Results and Discussionmentioning

confidence: 99%

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Transistor Characteristics of Charge-Transfer Complexes Observed across a Neutral–Ionic Transition

Uekusa

Sato

Yoo

et al. 2020

ACS Appl. Mater. Interfaces

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For basic understanding of transistor properties of doped organic semiconductors, 3,3′,5,5′-tetramethylbenzidine charge-transfer complexes are investigated, which change from neutral to ionic by varying the acceptors. When going into the ionic state, the bulk conduction increases more rapidly than the mobility, but sufficiently thin devices exhibit transistor properties. The resulting ambipolar characteristics are analyzed in the linear regions at small drain voltages in analogy with graphene transistors. The model is further extended to include partial overlap of electron and hole transport regions. In the temperature dependence, the activation energy loses gate voltage dependence when the neutral–ionic transition takes place by 0.1–0.2 eV above the equal acceptor and donor levels; the difference comes from the typical trap (polaron) depth or the Madelung energy.

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“…3,4 Materials with longer alkyl chains show reduced performance, 6 though single-crystal transistors of the pentyl compound exhibit a mobility of 1.1 cm 2 V -1 s -1 . 7 In addition to these tetrathione derivatives, the 2,2'-dione-4,4'-dithione derivatives (OS-R) are regarded as a dimer of rhodanine, which is a well-known electron-deficient unit. 8 Birhodanine is easily prepared by reacting alkyl amine, carbon disulfide, and dimethyl acetylene dicarboxylate for several minutes at room temperature.…”

Section: Introductionmentioning

confidence: 99%