Temperature dependent carrier lifetime measurements of InAs/InAsSb T<sub>2</sub>SLs

Aytac, Yigit; Olson, B. V.; Kim, J. K.; Shaner, Eric A.; Hawkins, Samuel D.; Klem, John F.; Flatté, Michael E.; Boggess, Thomas F.

doi:10.1117/12.2077753

Cited by 4 publications

(11 citation statements)

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“…The recent observations of much longer MC lifetimes in Ga-free InAs/InAsSb T2SLs provide strong support for this hypothesis. For example, InAs/InAsSb T2SLs have been shown to have MC lifetimes of ∼ 18 µs in the MWIR [43,44,49] and > 4.5 ns in LWIR [49] T2SLs have been reported for this Ga-free T2SL material system. These studies are included in this document.…”

Section: Carrier Lifetimementioning

confidence: 98%

“…T2SLs [17,43,44,56,57]. Other transient electronic processes in MWIR SLs include spin dynamics in InAs quantum dots [58] and in-plane transport in InAs/GaAs short-period T2SLs [56].…”

Section: Experimental Approachmentioning

confidence: 99%

“…Temperature-dependent carrier lifetime measurements are a candidate for identifying the energy levels of the defect-related mid-bandgap SRH recombination centers. It has been shown that Ga-free InAs/InAs 1−x Sb x T2SLs have MC lifetimes that are SRH limited for low doping levels [8,9,41,45,49], which suggests that a temperaturedependent study may lead to a fuller understanding of these materials. This in turn may lead to longer carrier lifetimes and better device performance.…”

Section: Chapter 4 Carrier Lifetimementioning

confidence: 99%

“…The results are listed under each section of this chapter in Tables 4.1, 4.3, and 4.5. InAsSb valence band by using the measured bandgap values and an InAsSb bandgap bowing parameter C gap = 0.67[43,45,57,90]. The measured bandgap values obtained from the low-temperature PL measurements and the HRXRD data were introduced into the model for each sample in order to determine the correct InAsSb valence band energy required to match the T2SL bandgap energies.…”

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confidence: 99%

“…The measured bandgap values obtained from the low-temperature PL measurements and the HRXRD data were introduced into the model for each sample in order to determine the correct InAsSb valence band energy required to match the T2SL bandgap energies. Once the theoretical bandgaps are matched to measurements, the model was extended to the higher temperature range reported for the measured carrier lifetimes[44,45,49,57,83].…”

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confidence: 99%

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Time-resolved measurements of charge carrier dynamics in Mwir to Lwir InAs/InAsSb superlattices

Aytac¹

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All-optical time-resolved measurement techniques provide a powerful tool for investigating critical parameters that determine the performance of infrared photodetector and emitter semiconductor materials. Narrow-bandgap InAs/GaSb type-II superlattices (T2SLs) have shown great promise as next generation materials, due to superior intrinsic properties and versatility. Unfortunately, InAs/GaSb T2SLs are plagued by parasitic Shockley-Read-Hall recombination centers that shorten the carrier lifetime and limit device performance. Ultrafast pump-probe techniques and time-resolved differential-transmission measurements are used here to demonstrate that "Ga-free" InAs/InAs 1−x Sb x T2SLs and InAsSb alloys do not have this same limitation and thus have significantly longer carrier lifetimes. Measurements of unintentionally doped MWIR and LWIR InAs/InAs 1−x Sb x T2SLs demonstrate minority carrier (MC) lifetimes of 18.4 µs and 4.5 µs at 77 K, respectively. This represents a more than two order of magnitude increase compared to the 90 ns MC lifetime measured in a comparable MWIR and LWIR InAs/GaSb T2SL. Through temperaturedependent differential-transmission measurements, the various carrier recombination processes are differentiated and the dominant recombination mechanisms identified for InAs/InAs 1−x Sb x T2SLs. These results demonstrate that these Ga-free materials are viable options over InAs/GaSb T2SLs and potentially bulk Hg 1−x Cd x Te photodetectors. In addition to carrier lifetimes, the drift and diffusion of excited charge carriers through the superlattice layers (i.e. in-plane transport) directly affects the performance of photo-detectors and emitters. All-optical ultrafast techniques were successfully used for a direct measure of in-plane diffusion coefficients in MWIR InAs/InAsSb T2SLs using a photo-generated transient grating technique at various temperatures. Ambipolar diffusion coefficients of approximately 60 cm 2 /s were reported for MWIR InAs/InAs 1−x Sb x T2SLs at 293 K.

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Section: Carrier Lifetimementioning

confidence: 98%

“…T2SLs [17,43,44,56,57]. Other transient electronic processes in MWIR SLs include spin dynamics in InAs quantum dots [58] and in-plane transport in InAs/GaAs short-period T2SLs [56].…”

Section: Experimental Approachmentioning

confidence: 99%

Section: Chapter 4 Carrier Lifetimementioning

confidence: 99%

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confidence: 99%

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Time-resolved measurements of charge carrier dynamics in Mwir to Lwir InAs/InAsSb superlattices

Aytac¹

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Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Alshahrani

Kesaria

Anyebe

et al. 2021

Advanced Photonics Research

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Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for environmental sensing of hazardous gases, security, defense, and medical applications. Mercury cadmium telluride (MCT) materials have been the most used detector in the MWIR range. However, it is plagued by several challenges including toxicity concerns, a high rate of Auger nonradiative recombination, a large band‐to‐band (BTB) tunneling current, nonuniformity, and the need for cryogenic cooling. Theoretically, it is predicted that type‐II superlattice (T2SL) materials can emerge as an alternative with the potential to outperform the current state‐of‐the‐art MCT PDs due to suppression of Auger recombination associated with bandgap engineering and reduced BTB tunneling current caused by the larger effective mass. Based on this theoretical prediction, it is believed that T2SL have the potential to operate at high temperatures and overcome the size, weight, and power consumption limitations of MCT. Herein, a detailed review of the fundamental material properties of T2SL PDs is provided while providing a comparison of the optical and electrical performances of Ga‐free (InAs/InAsSb) and Ga‐based (InAs/GaSb) T2SL PDs. Finally, recent advances in IR detection technologies including focal plane arrays and quantum cascade infrared photodetectors are explored.

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Investigation of a near mid-gap trap energy level in mid-wavelength infrared InAs/GaSb type-II superlattices

Wróbel

Ciura

Motyka

et al. 2015

Semicond. Sci. Technol.

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In this report, we present results of an experimental investigation of a near mid-gap trap energy level in InAs 10 ML /GaSb 10 ML type-II superlattices. Using thermal analysis of dark current, Fourier transform photoluminescence and low-frequency noise spectroscopy, we have examined several wafers and diodes with similar period design and the same macroscopic construction. All characterization techniques gave nearly the same value of about 140 meV independent of substrate type. Additionally, photoluminescence spectra show that the transition related to the trap centre is temperature independent. The presented methodology for thermal analysis of dark current characteristics should be useful to easily estimate the position of deep energy levels in superlattice photodiodes.

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Temperature dependent carrier lifetime measurements of InAs/InAsSb T₂SLs

Cited by 4 publications

References 14 publications

Time-resolved measurements of charge carrier dynamics in Mwir to Lwir InAs/InAsSb superlattices

Time-resolved measurements of charge carrier dynamics in Mwir to Lwir InAs/InAsSb superlattices

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Investigation of a near mid-gap trap energy level in mid-wavelength infrared InAs/GaSb type-II superlattices

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Temperature dependent carrier lifetime measurements of InAs/InAsSb T2SLs

Cited by 4 publications

References 14 publications

Time-resolved measurements of charge carrier dynamics in Mwir to Lwir InAs/InAsSb superlattices

Time-resolved measurements of charge carrier dynamics in Mwir to Lwir InAs/InAsSb superlattices

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Investigation of a near mid-gap trap energy level in mid-wavelength infrared InAs/GaSb type-II superlattices

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Temperature dependent carrier lifetime measurements of InAs/InAsSb T₂SLs