Temperature dependent black phosphorus transistor and memory

Abstract

We studied the temperature dependent transport properties and memory behaviour of ultrathin black phosphorus field-effect transistors. The devices show electrical conductance and field-effect mobility that decreases with the rising temperature. The field effect mobility, which depends also on the gate voltage sweep range, is 283 cm2V-1s-1 at 150 K and reduces to 33 cm2V-1s-1 at 340 K, when the voltage gate sweep range is ± 50 V. The transfer characteristics show a hysteresis width that increases with the temperature and is exploited to enable non-volatile memories with a wider programming window at higher temperatures.

Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors

“…41 We have observed a similar trend of mobilities 100, 175, and 283 cm 2 V À1 s À1 for exfoliated BP flakes with thicknesses of around 10, 20, and 30 nm, respectively. 14,27 In Fig. 3a, the transfer curves of the BP device are depicted as a function of V ds , in the range from 10 to 100 mV.…”

“…On the other hand, the mobility diminishes at higher temperatures, due to the dominant phonon scattering, following a power law, m eff B T Àa , where a is a positive number that can be measured experimentally. 27 However, a major challenge in the fabrication of devices based on BP lies in its instability under ambient conditions, primarily due to spontaneous surface oxidation. 28 Studies indicate that oxidation is triggered by interactions with oxygen (O 2 ), as water (H 2 O) alone does not appear to react with pristine BP, although it may catalyze O 2 induced oxidation.…”

Tunability of electronic properties in the 2D MoS2/α-tellurene/WS2 heterotrilayer via biaxial strain and electric field

“…[26][27][28] Similarly, the high carrier mobility and switching ratio observed in MoS 2 render it widely applicable in field-effect transistors (FETs) and flexible electronic devices. [29][30][31][32] Moreover, black phosphorene possesses an appropriate direct band gap and anisotropic optical properties, which can be leveraged to develop a new generation of optoelectronic devices. 33,34 With the advancement of 2D materials, vertically stacked monolayer structures composed of LEGO-like blocks, known as van der Waals heterostructures (vdWHs), have garnered considerable attention and interest.…”

Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS2

“…The above-mentioned investigations of the photoresponse of ReS 2 were carried out at room temperature. However, there has been increasing interest in the temperature-dependent properties of 2D materials. , Actually, the development of photoelectric devices also must deal with their suitability to extreme environmental conditions. Although there has been enough investigation at room temperature, the physical mechanisms affecting the photoresponse at extreme temperatures, especially at low temperatures, are not yet enough understood.…”