Temperature dependences of the contact resistivity in ohmic contacts to n +-InN

We report about a study of the formation and current transport mechanism of ohmic contacts to n+-InN with electron concentrations of 2×1018, 8×1018, and 4×1019 cm−3. Pd/Ti/Au ohmic contacts are formed by the proposed approach of simultaneous magnetron metal deposition and in-situ temperature annealing, which allows obtaining a low contact resistivity (4.20±2.67)×10−6 Ohm· cm2. The additional rapid thermal annealing in the temperature interval 350–400 ∘C is used to improve further contact characteristics. Optimal parameters of the temperature treatment are determined by statistic methods. As for the current transport mechanism, the unusual growing temperature behavior of contact resistivity is observed in the wide temperature range 4.2–380K for each doping level of InN films. The mechanism of thermionic current flow explains the current transport through metal shunts, which is associated with the conducting dislocations. The extracted density of conducting metal shunts has a good agreement with experimental values of the screw and edge dislocation densities experimentally obtained by high-resolution X-ray diffraction. Additionally, from the obtained contact resistivity temperature dependences, we can argue about the metal, which penetrates dislocations and forms shunts.

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“…A more detailed information about the preparation of samples can be found in Refs. [12,13]. Samples A and B (see Tabl.…”

Section: Fabrication Of Samples and Investigation Methodsmentioning

confidence: 99%

Features of the Formation of Ohmic Contacts to n+-InN

et al. 2019

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“…In particular, several physical mechanisms explaining temperature growth of ohmic contacts resistivity were proposed in the recent 10-15 years. Among them, there are current flow through metal shunts coupled with extensive defects in semiconductors [20][21][22][23][24][25][26], current flow in ohmic contacts with a doping step [27] and the mechanism of partial screening of surface charge states at high doping levels [28].…”

Section: Historical Backgroundmentioning

confidence: 99%

“…The results of analyzing the new ohmic contacts forming mechanisms are shown in [21][22][23][24][25][26][27][28][29].…”

Section: Classical Current Flow Mechanisms Ensuring Ohmic Contact Reamentioning

confidence: 99%

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2018

Semicond. Phys. Quantum Electron. Optoelectron.

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This review is devoted to presentation and analysis of physical mechanisms of ohmic contacts formation in semiconductors. In addition to the classical mechanisms known for decades, new mechanisms for current flow in ohmic contacts researched for the recent decade are described. Used in this review were the original results of the authors, which they described earlier in various papers of recent years. Current flow through dislocations combined with metal shunts, realized, in particular, on the lapped semiconductor surface; detailed current flow mechanism in the presence of doping step and current flow through the heavily doped semiconductor surface charge states reduction should be noted among the new mechanisms of current flow. These current flow mechanisms are characterized by the presence of specific contact resistance growth with temperature increase in some temperature intervals and contacts ohmicity up to helium temperatures.

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“…Calculation of contact resistivity for this mechanism of current flow was performed in [10]. In this subsection, a theoretical approach to calculate temperature dependence of InNbased nanowire resistance is proposed, and comparison of the developed theory with experiment is performed [24]. In recent years, indium nitride and InN-based solid solutions are one of the most intensely studied materials among the III−N compounds.…”

Section: Introductionmentioning

confidence: 99%

http://journal-spqeo.org.ua

Sachenko¹,

Конакова²,

Belyaev³

2018

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. This review is devoted to presentation and analysis of physical mechanisms of ohmic contacts formation in semiconductors. In addition to the classical mechanisms known for decades, new mechanisms for current flow in ohmic contacts researched for the recent decade are described. Used in this review were the original results of the authors, which they described earlier in various papers of recent years. Current flow through dislocations combined with metal shunts, realized, in particular, on the lapped semiconductor surface; detailed current flow mechanism in the presence of doping step and current flow through the heavily doped semiconductor surface charge states reduction should be noted among the new mechanisms of current flow. These current flow mechanisms are characterized by the presence of specific contact resistance growth with temperature increase in some temperature intervals and contacts ohmicity up to helium temperatures.

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Temperature dependences of the contact resistivity in ohmic contacts to n +-InN

Cited by 7 publications

References 29 publications

Features of the Formation of Ohmic Contacts to n+-InN

Features of the Formation of Ohmic Contacts to n+-InN

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http://journal-spqeo.org.ua

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