Temperature Dependence Study of Mesa-Type InGaAs/InAlAs Avalanche Photodiode Characteristics

Huang, Jack Jia‐Sheng; Chang, Hsiang-Szu; Jan, Yu-Heng; Ni, C. J.; Chen, H. S.; Chou, Emin

doi:10.1155/2017/2084621

Cited by 15 publications

(17 citation statements)

References 19 publications

(21 reference statements)

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“…Assuming half of the voltage drop is across the multiplication layer, we can estimate the breakdown electric field at the multiplication layer (Saleh et al, 2001). Our previous study showed that the breakdown fields in the multiplication layers for 2.5G, 10G, and 25G APDs were about 560, 800, and 1300kV/cm, respectively (Huang et al, 2017). Since the breakdown electric field is the maximum at the multiplication layer, we expect that this layer may become the weak spot when exposing to the harsh environmental stresses.…”

Section: Methodsmentioning

confidence: 99%

Reliability Scaling of Nanoscale Avalanche Photodiodes in High-Speed Optical Communication

Huang¹,

Chang²,

Jan³

2019

APR

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In the present era of big data and 5G wireless, both microelectronic and photonic components are indispensable building blocks. For microelectronics, device miniaturization has been following Moore's law to attain higher speed and greater functionality. For photonics, similar device scaling is also evolving in both lasers and photodiodes to transmit high data rates of 25 Gb/s and beyond. However, such device miniaturization may impose challenges such as reliability and fabrication that require careful scientific and engineering studies. In particular, the reliability understanding of photonic device scaling is fairly rudimentary with only scattered reports. In this paper, we study the device and reliability scaling of nanoscale avalanche photodiodes (APDs). The device miniaturization of APDs mainly involves thickness reduction in the charge control and multiplication layers. The layer reduction however causes an increase in breakdown field that may adversely affect reliability in several aspects such as electrical/optical overload and electrostatic discharge (ESD). We present a new reliability degradation model of APDs based on the breakdown field and correlate it with the experimental data. Empirical reliability equations are instituted to establish quantitative formulation. We discuss the overload and ESD performances as a function of breakdown field for both planar-type and mesa-type APD structures.

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Section: Methodsmentioning

confidence: 99%

Reliability Scaling of Nanoscale Avalanche Photodiodes in High-Speed Optical Communication

Huang¹,

Chang²,

Jan³

2019

APR

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“…Among the various layers of APD, the charge control layer is denoted as the minimum feature size. Semiconductor photodetectors have evolved from 2.5G APD to 10G APD and recently advanced to 25G APD [22,23]. Driven by 100G datacenter demand, the development and manufacturing of 25G APD have been accelerated with rapid pace and growth [24][25][26].…”

Section: Nanoscale Photonic and Electronic Devicesmentioning

confidence: 99%

“…For 10G APD, mesa-type structure with coplanar p-and n-metal contacts is employed to enhance the speed [23,36]. The active region is sandwiched between the P-mesa at the top and the N-mesa at the bottom.…”

Section: Nanoscale Iii-v Semiconductor Photodetectorsmentioning

confidence: 99%

“…When the reverse voltage is applied to the device, the InAlAs multiplication layer begins to be depleted first. The first transition at 10 V corresponds to the punch-through voltage at which electric field depletes the InAlAs multiplication and i-InGaAs absorption layers [23,37]. The punch-through voltage related to the absorption layer is denoted as V pt .…”

Section: Nanoscale Iii-v Semiconductor Photodetectorsmentioning

confidence: 99%

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Nanoscale III-V Semiconductor Photodetectors for High-Speed Optical Communications

Huang¹,

Jan²,

Chang³

et al. 2018

Two-Dimensional Materials for Photodetector

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Nanophotonics involves the study of the behavior of light on nanometer scale. Modern nanoscale semiconductor photodetectors are important building blocks for high-speed optical communications. In this chapter, we review the state-of-the-art 2.5G, 10G, and 25G avalanche photodiodes (APDs) that are available in commercial applications. We discuss the key device parameters, including avalanche breakdown voltage, dark current, temperature dependence, bandwidth, and sensitivity. We also present reliability analysis on wear-out degradation and optical/electrical overload stress. We discuss the reliability challenges of nanoscale photodetectors associated with device miniaturization for the future. The reliability aspects in terms of high electric field, Joule heating, and geometry inhomogeneity are highlighted.

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“…Kleinov et al have paid to the charge layer in order to optimize the InAlAs/InGaAs structure for low band discontinuities and an appropriate electric field distribution for the gains less than 300 [10]. Recently, Huang et al [11] have studied temperature dependency of InGaAs based multiplication region APDs.…”

Section: Introductionmentioning

confidence: 99%

A Double Heterostructure Multiplication Region in AlGaN Based SAGCM Avalanche Photodiode

Bagheriyeh-Behbahani¹,

Soroosh²,

Farshidi³

2017

OPJ

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In this study, separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiode (APD) with double heterojunction AlN/Al x Ga 1-x N/GaN in multiplication region were designed to reduce excess noise using Monte Carlo simulation. The multiplication region was broken to three different regions and tried to enhance localization of the first and second impact ionization events at near the heterojunctions. The excess noise of the proposed structure, for high gains, was 64% smaller than that of the fabricated standard AlGaN-APDs.

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Temperature Dependence Study of Mesa-Type InGaAs/InAlAs Avalanche Photodiode Characteristics

Cited by 15 publications

References 19 publications

Reliability Scaling of Nanoscale Avalanche Photodiodes in High-Speed Optical Communication

Reliability Scaling of Nanoscale Avalanche Photodiodes in High-Speed Optical Communication

Nanoscale III-V Semiconductor Photodetectors for High-Speed Optical Communications

A Double Heterostructure Multiplication Region in AlGaN Based SAGCM Avalanche Photodiode

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