Temperature dependence on electrical characteristics of short geometry poly-crystalline silicon thin film transistor

Statistical study on the temperature dependence of the turn-on characteristics for p-type LTPS TFTs

“…In addition, when the temperature gets up, the carriers pass through the area near the trap centers more frequently because the holes move faster. On the contrary, at high Vgs, the decrease of the holes mobility at risen temperature is attributed to the more significant lattice scattering [5]. Fig.…”

Comparative study on extraction methods of threshold voltage for thin‐film transistors

“…13 Sehagal et al argued that higher temperature usually generates a larger number of free carriers in channel formation, therefore leading to a lower threshold voltage, where several carriers have accumulated in the channel layer and then induce the onset of transistors. 14 Figure 3 shows the temperature dependence of V th from different extracted methods at V d = 0.1 V for the device with W/L rations of 3 μm/3 μm, 3 μm/6 μm, and 3 μm/31.2 μm, respectively. In Figure 3, one can see that the values of V th with the temperature from ELR method are similar to that from the SD method.…”

Threshold voltage modelling and gate oxide thickness effect on polycrystalline silicon thin-film transistors

“…Numerous theoretical and experimental papers [5][6][7][8][9] have been published on the threshold voltage of a poly-Si TFT. Fortunato and Migliorato [5] deduced and proposed an approximated analytical expression for the threshold voltage as a function of the gap state density parameters.…”

“…But this model cannot explain the gate insulator dependence on the threshold voltage of poly-Si TFT. Recently, Sehgal et al [8], developed an analytical model showing the temperature dependence on the threshold voltage of poly-Si TFT considering the short channel effects and inverse narrow width effects. They developed the model considering the non-linear behaviour of threshold voltage with drain bias.…”