Temperature dependence of transport properties of InN films

Abstract

The temperature dependence of Hall mobility, µ , and carrier density, e N , for thin InN films grown by Molecular Beam Epitaxy and Plasma Source Molecular Beam Epitaxy have been investigated. For temperature up to 300 K, a large temperature-independent e N is observed in films grown by the above two techniques. However, for higher temperatures, carrier density (N e ) increases with temperature. The characteristic behavior of the mobility for the films with low carrier density is different from that of the high carrier density film, particularly at low temperatures. The low carrier density film shows a peak ~250 K in mobility as a function of temperature which is contrast to the temperature independent mobility observed for the high density film for T < 300 K. We have investigated theoretically the effect of concentration of donor, acceptor, and threading dislocations on the carrier mobility in these films. Various electron-scattering mechanisms for the mobility in these films have been discussed.

Growth of high quality InN on production style PA‐MBE system

“…The sample with the highest room-temperature mobility, exhibited a mobility of 2106 cm 2 /Vs at 80K. This higher mobility at low temperature is consistent with previously published measurements of high-quality InN [5]. Samples which exhibited step-flow growth features, had comparable mobilities with values slightly higher than 1400 cm 2 /Vs, and average electron concentration of ~ 3.2 ×10…”

Effect of strain relaxation and the Burstein–Moss energy shift on the optical properties of InN films grown in the self-seeded catalytic process

“…Moreover, the behaviour of LO phonon modes in the case of InN is well studied by several groups for different carrier concentrations. 6,7,32,38,39 However, it is still under de-bate over the years because of contradicting results in the literature. The frequencies of L − and L + fall in the range of 400-450 and ∼885 cm −1 , respectively.…”

“…3,4 However, studies related to the effect of strain and carrier density on optical emission properties are inadequate. As of now, most of the InN films are deposited by controlled growth techniques such as molecular beam epitaxy (MBE), [5][6][7] and metal organic vapor phase epitaxy (MOVPE). 8 Moreover, Zhao et al 9 was also able to synthesize p-type InN nanowires by an improved MBE technique.…”

“…In addition to this, especially in the case of III-nitrides, Raman spectroscopy is useful to study the coupling of charge carriers with the LO phonon mode through Frölich interaction. 6,24 In addition to strain, there is a blue shift of the band gap energy because of the fact that the Burstein-Moss (BM) phenomenon plays a crucial role in the optical properties of InN owing to the presence of high carrier density. 25 Moreover, high surface electron accumulation of InN films has its own effect on the optical properties.…”

Excitation dependent Raman studies of self-seeded grown InN nanoparticles with different carrier concentration

“…However, the vibrational properties of InN studied using Raman spectroscopy are very much controversial despite how much they have been studied. [15][16][17][18][19][20][21] The controversies in the Raman spectroscopic studies of InN surround the phonon structure of the longitudinal optical (A 1 (LO)) mode. As a degenerate semiconductor, one can expect the large influence of carrier concentration on the vibrational properties of InN.…”