Temperature dependence of thermoelectric properties of Ni-doped CoSb3

Kitagawa, Hiroyuki; Wakatsuki, Machiko; Nagaoka, Hisanori; Noguchi, Hiroyuki; Isoda, Yukihiro; Hasezaki, Kazuhiro; Noda, Yasutoshi

doi:10.1016/j.jpcs.2005.05.077

Cited by 75 publications

(45 citation statements)

References 3 publications

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“…15 Very recently, CoSb 3 filled with electronegative atoms (S and Se) were successfully prepared with a strong covalent guest-host interactions between S (or Se) and Sb, which leads to very low lattice thermal conductivity. 17 The second approach is substituting Co or Sb atoms with metals or semimetals to tune the electronic properties, [17][18][19][20][21][22][23] and lots of experimental studies show VIA-group element (O, S, Se, Te) dopants can significantly influence the TE properties of CoSb 3 . 17,18,[24][25][26][27] For Te doped CoSb 3 , Te substituting Sb (Te Sb ) would be the dominant point defect.…”

Section: Zt T α σ κ =mentioning

confidence: 99%

“…is the density of states of ideal host cell, and is the Fermi-Dirac distribution given by: 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 13 (8) Following the procedure described above, the Fermi level (E F ) and free carriers can be determined by iteratively solving the overall charge neutrality requirement, as displayed in 17 The annealing temperature region of CoSb 3 is generally around 850 -1100 K. [14][15][16][17][18][19][20][21][22][23] The electron carrier concentration is found to be The total composition x of a phase with defects within an equilibrium set of atomic chemical potentials can be calculated by:…”

Section: Defect Carrier Concentration and Solubility Limitation In M mentioning

confidence: 99%

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Defect-Controlled Electronic Structure and Phase Stability in Thermoelectric Skutterudite CoSb₃

Aydemir

Wood

et al. 2017

Chem. Mater.

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Section: Zt T α σ κ =mentioning

confidence: 99%

Section: Defect Carrier Concentration and Solubility Limitation In M mentioning

confidence: 99%

Defect-Controlled Electronic Structure and Phase Stability in Thermoelectric Skutterudite CoSb₃

Aydemir

Wood

et al. 2017

Chem. Mater.

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“…[13][14][15][16][17] Those phonons are primarily scattered by features in the structure (dopant, nanostructures and so on) that are comparable in size to the MFP of the phonons. For example, the high-frequency (short-wavelength) phonons tend to be scattered more effectively by atomic-scale point defects, that is, doping foreign species at the sites of Co 18,19 and Sb 7,11,20,21 or introducing filler atoms [22][23][24] into the structural voids (cages) of CoSb 3 . The medium-frequency phonons with medium MFP of several to hundreds of nanometers are significantly scattered by nanoprecipitates or other nanoscale heterogeneities.…”

Section: Introductionmentioning

confidence: 99%

Panoscopic approach for high-performance Te-doped skutterudite

Liang

Yan

et al. 2017

NPG Asia Mater

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One-step plasma-activated sintering (OS-PAS) fabrication of single-phase high-performance CoSb 3 -based skutterudite thermoelectric material with a hierarchical structure on a time scale of a few minutes is first reported here. The formation mechanism of the CoSb 3 phase and the effects of the current and pressure fields on the phase transformation and microstructure evolution are studied in the one-step PAS process. The application of the panoscopic approach to this system and its effect on the transport properties are investigated. The results show that the hierarchical structure forms during the formation of the skutterudite phase under the effects of both current and sintering pressure. The samples fabricated by the OS-PAS technique have defined hierarchical structures, which scatter phonons more intensely over a broader range of frequencies and significantly reduce the lattice thermal conductivity. High-performance bulk Te-doped skutterudite with the maximum ZT of 1.1 at 820 K for the composition CoSb 2.875 Te 0.125 was obtained. Such high ZT values rival those obtained from single filled skutterudites. This newly developed OS-PAS technique enhances the thermoelectric performance, dramatically shortens the synthesis period and provides a facile method for obtaining hierarchical thermoelectric materials on a large scale. NPG Asia Materials (2017) 9, e352; doi:10.1038/am.2017.1; published online 24 February 2017 INTRODUCTION Thermoelectric technology uses solid-state semiconductors, which can directly convert heat into electricity and vice versa using the Seebeck effect for power generation and Peltier effect for cooling. The efficiency of thermoelectric materials is governed by the dimensionless figure of merit ZT = α 2 σT/κ, where α, σ, T and κ are the Seebeck coefficient, electrical conductivity, absolute temperature and thermal conductivity, respectively. Many studies have been conducted in the past decades 1-5 to enhance the thermoelectric properties with a focus on improving the power factor and decreasing the thermal conductivity. Because of the high electrical transport performance 6,7 and relatively good mechanical properties, 8 skutterudites are considered notably promising for commercial power generation thermoelectric applications 9,10 in the temperature range of 500-900 K. 6,7,11,12 However, the disadvantage of skutterudites is their notably high lattice thermal conductivity of 410 W m − 1 K − 1 . To obtain a higher conversion efficiency, the thermal conductivity must be further reduced.The thermal conductivity of skutterudites derives from the contributions of phonons with a notably broad range of frequencies and mean free paths (MFPs). [13][14][15][16][17] Those phonons are primarily scattered by features in the structure (dopant, nanostructures and so on) that are comparable in size to the MFP of the phonons. For example, the high-frequency (short-wavelength) phonons tend to be scattered more

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“…However, these elements have filling limitations. 7 Doping of partial Co [8][9][10] or Sb-site [11][12][13] substitution has also been widely studied to lower the thermal conductivity through phonon scattering on impurities.…”

Section: Introductionmentioning

confidence: 99%

Effects of Double Substitution with Ge and Te on Thermoelectric Properties of a Skutterudite Compound

Duan

Zhai

Liu

et al. 2010

Journal of Elec Materi

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Studies have shown that the thermoelectric properties of CoSb 3 could be improved by the substitution of group IVB or VIB elements for Sb. However, the substitution volume is limited. To get a better picture of the substitution volume in view of thermoelectric properties, Ge and Te double-substituted skutterudite materials were prepared with the nominal composition of Co 4 Sb x Ge 5.9À0.5x Te 6.1À0.5x (x = 11, 10, 9, 8) by the traditional solid-state reaction method and spark plasma sintering, and Rietveld analysis was employed to refine the crystal structure. The results showed that the lattice parameter decreased linearly and the solubility limitations of group IVB and VIB elements were greatly alleviated by the Ge and Te codoping. Besides, the thermoelectric properties were analyzed through measurements of electrical and thermal conductivities as well as room-temperature electrical transport properties. The results showed that the substitution volume of Ge and Te could play an important role in the thermoelectric properties, and a minimum lattice thermal conductivity value of 1.56 W m À1 K À1 was obtained at around 673 K for Co 4 Sb 8 Ge 1.9 Te 2.1 . Co 4 Sb 11 Ge 0.4 Te 0.6 achieved the best figure of merit of 0.89 at around 773 K, which was remarkably improved over that of untreated CoSb 3 .

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Temperature dependence of thermoelectric properties of Ni-doped CoSb3

Cited by 75 publications

References 3 publications

Defect-Controlled Electronic Structure and Phase Stability in Thermoelectric Skutterudite CoSb₃

Defect-Controlled Electronic Structure and Phase Stability in Thermoelectric Skutterudite CoSb₃

Panoscopic approach for high-performance Te-doped skutterudite

Effects of Double Substitution with Ge and Te on Thermoelectric Properties of a Skutterudite Compound

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Temperature dependence of thermoelectric properties of Ni-doped CoSb3

Cited by 75 publications

References 3 publications

Defect-Controlled Electronic Structure and Phase Stability in Thermoelectric Skutterudite CoSb3

Defect-Controlled Electronic Structure and Phase Stability in Thermoelectric Skutterudite CoSb3

Panoscopic approach for high-performance Te-doped skutterudite

Effects of Double Substitution with Ge and Te on Thermoelectric Properties of a Skutterudite Compound

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Product

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Defect-Controlled Electronic Structure and Phase Stability in Thermoelectric Skutterudite CoSb₃

Defect-Controlled Electronic Structure and Phase Stability in Thermoelectric Skutterudite CoSb₃