2008
DOI: 10.1007/s00339-008-4884-5
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Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials

Abstract: The dependence of thermal properties of Ag 8 In 14 Sb 55 Te 23 phase-change memory materials in crystalline and amorphous states on temperature was measured and analyzed. The results show that in the crystalline state, the thermal properties monotonically decrease with the temperature and present obvious crystalline semiconductor characteristics. The heat capacity, thermal diffusivity, and thermal conductivity decrease from 0.35 J/g K, 1.85 mm 2 /s, and 4.0 W/m K at 300 K to 0.025 J/g K, 1.475 mm 2 /s, and 0.2… Show more

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Cited by 37 publications
(14 citation statements)
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“…This is rather high for a metal and might be caused by electron scattering at the grain boundaries. Such an effect may also cause the low thermal conductivity ( κ ) of 1.25 W · K –1 · m –1 at room temperature, which is much lower than reported values for crystalline AIST thin films (4 W · K –1 · m –1 at RT) 27. The Seebeck coefficient (S) of ca.…”
Section: Resultsmentioning
confidence: 71%
“…This is rather high for a metal and might be caused by electron scattering at the grain boundaries. Such an effect may also cause the low thermal conductivity ( κ ) of 1.25 W · K –1 · m –1 at room temperature, which is much lower than reported values for crystalline AIST thin films (4 W · K –1 · m –1 at RT) 27. The Seebeck coefficient (S) of ca.…”
Section: Resultsmentioning
confidence: 71%
“…Using the data of [27,28], separation z=50 nm, which is comparable to the minimum separation in the force measurements with R=10.1 µm…”
Section: Force Theory and Modellingmentioning
confidence: 78%
“…dT with C ୮ the specific heat capacity, T RT =300 K, and T cr =451 K the crystallization temperature for AIST [27,28]. The energy necessary for amorphization (via…”
Section: Force Theory and Modellingmentioning
confidence: 99%
“…Sb 2 Te 3 phase change materials are very sensitive to temperature [14,17], thus the Marangoni effect can be observed more than other materials when induced by pulse lasers and different patterns can be formed accordingly.…”
mentioning
confidence: 99%
“…Sb 2 Te 3 phase change materials have been extensively used as optical and nonvolatile electrical data storage media due to the large difference of optical reflectivity and electrical resistivity between crystalline and amorphous states [13][14][15][16][17][18][19][20][21][22]. Sb 2 Te 3 phase change materials are very sensitive to temperature [14,17], thus the Marangoni effect can be observed more than other materials when induced by pulse lasers and different patterns can be formed accordingly.…”
mentioning
confidence: 99%