Temperature dependence of the threshold current density of a quantum dot laser

Asryan, Levon V.; Suris, R. A.

doi:10.1109/3.668772

Cited by 100 publications

(44 citation statements)

References 12 publications

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“…Since the output power depends on the cavity length not only through , but also through the trivial dependence on the device area [see (32)], the asymptotes for the different curves in Fig. 9 are distinct.…”

Section: Illustration Of Resultsmentioning

confidence: 99%

“…We shall consider a GaInAsP-InP heterostructure similar to that used in previous theoretical studies [26], [29], [30], [32]. Room temperature continuous-wave operation near 1.55 m is assumed.…”

Section: Illustration Of Resultsmentioning

confidence: 99%

“…This effect may disrupt the pinning of the electron and hole level occupancies in a QD above threshold and cause their dependence on current, similarly to the way it causes their temperature dependence [30], [32]. We will address this issue in a separate work.…”

Section: A Confined Carrier Level Occupancy In a Qd (Carrier Densitymentioning

confidence: 99%

“…As discussed in Section III-F2, in this case and the ratio . In this limit, the quantities , , and are given, respectively, by (25), (26), (32), and (37), with the following expression for [obtained from (31)]:…”

Section: Lcc In the Case Of High Threshold Current Densitymentioning

confidence: 99%

“…In general, however, is a tangible fraction of the total . It is this component that should be first of all suppressed to minimize and optimize the structure [26], [29], [30], [32]- [34]. The conclusion that high-power performance of a laser is inseparably controlled by the threshold characteristics is of great importance.…”

Section: F Key Parameter Controlling Power Characteristicsmentioning

confidence: 99%

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Internal efficiency of semiconductor lasers with a quantum-confined active region

Asryan

Luryi

Suris

2003

IEEE J. Quantum Electron.

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Abstract-We discuss in detail a new mechanism of nonlinearity of the light-current characteristic (LCC) in heterostructure lasers with reduced-dimensionality active regions, such as quantum wells (QWs), quantum wires (QWRs), and quantum dots (QDs). It arises from: 1) noninstantaneous carrier capture into the quantum-confined active region and 2) nonlinear (in the carrier density) recombination rate outside the active region. Because of 1), the carrier density outside the active region rises with injection current, even above threshold, and because of 2), the useful fraction of current (that ends up as output light) decreases. We derive a universal closed-form expression for the internal differential quantum efficiency int that holds true for QD, QWR, and QW lasers. This expression directly relates the power and threshold characteristics. The key parameter, controlling int and limiting both the output power and the LCC linearity, is the ratio of the threshold values of the recombination current outside the active region to the carrier capture current into the active region. Analysis of the LCC shape is shown to provide a method for revealing the dominant recombination channel outside the active region. A critical dependence of the power characteristics on the laser structure parameters is revealed. While the new mechanism and our formal expressions describing it are universal, we illustrate it by detailed exemplary calculations specific to QD lasers. These calculations suggest a clear path for improvement of their power characteristics. In properly optimized QD lasers, the LCC is linear and the internal quantum efficiency is close to unity up to very high injection-current densities (15 kA/cm 2 ). Output powers in excess of 10 W at int higher than 95% are shown to be attainable in broad-area devices. Our results indicate that QD lasers may possess an advantage for high-power applications.Index Terms-Quantum dots (QDs), quantum wells (QWs), quantum wires (QWRs), semiconductor heterojunctions, semiconductor lasers.

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Section: Illustration Of Resultsmentioning

confidence: 99%

Section: Illustration Of Resultsmentioning

confidence: 99%

Section: A Confined Carrier Level Occupancy In a Qd (Carrier Densitymentioning

confidence: 99%

Section: Lcc In the Case Of High Threshold Current Densitymentioning

confidence: 99%

Section: F Key Parameter Controlling Power Characteristicsmentioning

confidence: 99%

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Internal efficiency of semiconductor lasers with a quantum-confined active region

Asryan

Luryi

Suris

2003

IEEE J. Quantum Electron.

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Optical Properties of Self-Organized Quantum Dots: Modeling and Experiments

Grundmann

Stier

Bognár

et al. 2000

phys. stat. sol. (a)

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The optical and electronic properties of self-organized quantum dots (QDs) are of decisive importance for the performance of laser diodes with such QDs as the active medium. Of primary interest is the gain with regard to its spectral position, width, magnitude, and temporal behavior. We survey the mutually stimulating advances in the theoretical understanding of QD gain and the performance of QD lasers. Emphasis is put on the temperature dependence of the carrier distribution function.

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Internal-loss-limited maximum operating temperature and characteristic temperature of quantum dot laser

Asryan¹

2006

Laser Phys. Lett.

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Carrier-density-dependent internal optical loss sets an upper limit for operating temperatures and considerably reduces the characteristic temperature of a quantum dot laser. Such internal loss also constrains the shallowest potential well depth and the smallest tolerable size of a quantum dot at which the lasing can be attained. At the maximum operating temperature or when any parameter of the structure is equal to its critical tolerable value, the characteristic temperature drops to zero. Minimum tolerable excitation energy from a QD against cross section of internal absorption loss

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Temperature dependence of the threshold current density of a quantum dot laser

Cited by 100 publications

References 12 publications

Internal efficiency of semiconductor lasers with a quantum-confined active region

Internal efficiency of semiconductor lasers with a quantum-confined active region

Optical Properties of Self-Organized Quantum Dots: Modeling and Experiments

Internal-loss-limited maximum operating temperature and characteristic temperature of quantum dot laser

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