Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050–1070 nm)

Shashkin, I. S.; Vinokurov, D. A.; Lyutetskiy, A. V.; Nikolaev, D. N.; Pikhtin, N. A.; Rudova, N. A.; Sokolova, Z. N.; Slipchenko, S. O.; Stankevich, A. L.; Shamakhov, V. V.; Veselov, D. A.; Bakhvalov, K. V.; Tarasov, I. S.

doi:10.1134/s1063782612090217

Cited by 12 publications

(5 citation statements)

References 14 publications

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“…Table 2 lists the characteristic temperatures T 0 and T 1 , calculated in accordance with [13,14]. Heterostructure 1 has comparatively low characteristic temperatures, which points to its low temperature stability.…”

Section: Methodsmentioning

confidence: 99%

Internal optical loss and internal quantum efficiency of a high-power GaAs laser operating in the CW mode

Veselov

Bobretsova

Klimov

et al. 2021

Semicond. Sci. Technol.

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We continue the comparative studies of high-power AlGaAs/InGaAs/GaAs semiconductor lasers with different waveguide designs. In this work, measurements were carried out for a continuous-wave mode of operation: light-current and current-voltage characteristics, threshold characteristics and their temperature dependences and crystal temperature depending on the pump current. The data obtained made it possible to reconstruct the dependences of internal optical losses and internal quantum efficiency using calculations. It was shown that the main factor affecting the power characteristics in the continuous mode of operation is the temperature stability of the laser and its relationship with internal optical losses and internal quantum efficiency. Thus, lasers based on a heterostructure with a doped GaAs waveguide with characteristic temperatures T 0 and T 1 of 120 K and 170 K, respectively, demonstrated an increase in internal optical losses to 2 cm −1 and a drop in the quantum efficiency to 90%, which led to saturation of the output power by high pump currents. Lasers based on the heterostructure with an AlGaAs waveguide, which are characterized by higher temperature stability (T 0 = 161 K and T 1 = 280 K), had lower internal optical losses and a higher quantum efficiency. This made it possible to obtain optical power 1 W higher than that for lasers with GaAs waveguides.

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Section: Methodsmentioning

confidence: 99%

Internal optical loss and internal quantum efficiency of a high-power GaAs laser operating in the CW mode

Veselov

Bobretsova

Klimov

et al. 2021

Semicond. Sci. Technol.

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“…The laser heterostructure parameters are listed in Table 1. The composition of the waveguide solid solution is chosen taking into account the necessity of suppression of charge delocalisation from the active region into the waveguiding layers [11,12]. The waveguide width is increased to decrease the internal optical loss, the beam divergence, and the optical power density at the output mirror of the laser [13,14].…”

Section: Experimental Samples and Main Methodsmentioning

confidence: 99%

Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime

Veselov¹,

Kapitonov²,

Pikhtin³

et al. 2014

Quantum Electron.

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Semiconductor lasers based on MOVPE-grown asymmetric separate-confinement heterostructures with a broadened waveguide and emitting in the wavelength range 1.0 -1.1 mm are studied. It is found that the intensity of spontaneous emission from the active region increases with increasing pump current above the lasing threshold and that this is caused by a growth in the concentration of charge carriers in the active region due to the modal gain enhancement needed to compensate for the growing internal optical loss at high pulsed pump currents. It is shown that the increase in the internal optical loss with increasing pulsed pump current is one of the main reasons for saturation of the light -current characteristics of high-power semiconductor lasers.

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“…Сделана оценка доли термоэмиссионных токов электронов и дырок в широком интервале плотностей токов накачки -от близких к пороговому до сверхвысоких значений (> 10 кА/см 2 ). Показано, что для плотностей токов накачки, близких к пороговым значениям, эмиссия электронов оказывает определяющее влияние на эффективность инжекции носителей заряда в КЯ, что находится в хорошем согласии с выводами авторов работ [9][10][11]. С ростом уровня инжекции в результате уменьшения эффективной высоты потенциального барьера существенно растет доля термоэмиссионного дырочного тока.…”

Section: заключениеunclassified

“…Использование зависимости тока термоэлектронной эмиссии в соответствии с классической теорией было признано справедливым при вычислении скорости эмиссии электронов и дырок из КЯ лазерных гетероструктур. Имеется хорошее соответствие полученных результатов теоретических и экспериментальных исследований зависимости плотности пороговых токов от температуры, времени транспорта носителей заряда к КЯ, времени захвата носителей заряда в КЯ, скорости " утечки" электронов из КЯ в волновод от плотности заряда в КЯ [9][10][11]. В перечисленных публикациях основное внимание уделялось исследованиям лазерной эффективности в области плотностей токов в предпороговом и близких к пороговому режимах накачки, когда эмиссия электронов оказывает определяющее влияние.…”

Section: Introductionunclassified

О токовой зависимости эффективности инжекции и относительном вкладе скорости эмиссии и внутренних оптических потерь в насыщение ватт-амперной характеристики мощных импульсных лазеров (λ=1.06 мкм)

РОЖКОВ¹

2020

Физика И Техника Полупроводников

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The results of numerical simulation of the current dependence of the injection efficiency in the active area of the laser based on separate confinement heterostructures are presented. The feature of the transfer of charge carriers through isotype N-n heterotransitions on the interface boundary of waveguide and active areas is shown. Using the classic dependencies of the Drude-Lorentz theory, the cross-section of electrons and holes for the GaAs waveguide was evaluated. The resulting values of σe= 1.05∙10-18 cm2 and σp= 1.55∙10-19 cm2 and current dependencies of the injection efficiency allowed to determine the root-cause reason for the pulse power saturation of semiconductor lasers. It has been established that saturation of power-current characteristics is dominated by holes escape from the active region to the waveguide and internal optical losses are lower confinement factors.

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Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050–1070 nm)

Cited by 12 publications

References 14 publications

Internal optical loss and internal quantum efficiency of a high-power GaAs laser operating in the CW mode

Internal optical loss and internal quantum efficiency of a high-power GaAs laser operating in the CW mode

Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime

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