Temperature Dependence of the Raman Spectra of Graphene and Graphene Multilayers

Calizo, Irene; Balandin, Alexander A.; Bao, Wenzhong; Miao, Feng; Lau, Chun Ning

doi:10.1021/nl071033g

Cited by 1,097 publications

(923 citation statements)

References 37 publications

(117 reference statements)

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“…This makes Raman spectroscopy an effective technique to determine the doping type and dopant concentration in graphene [26,27]. The effects of temperature on the Raman spectra of graphene have also been studied and the lattice inharmonicity of graphene investigated [28]. Moreover, an extremely high thermal conductivity of graphene (~3080 5150 W/(m·K)) has recently been observed by Raman spectroscopy, which suggests the potential application of graphene as a thermal management material in future nanoelectronic devices [29].…”

Section: Nano Researchmentioning

confidence: 99%

Raman spectroscopy and imaging of graphene

et al. 2008

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Graphene has many unique properties that make it an ideal material for fundamental studies as well as for potential applications. Here we review recent results on the Raman spectroscopy and imaging of graphene. We show that Raman spectroscopy and imaging can be used as a quick and unambiguous method to determine the number of graphene layers. The strong Raman signal of single layer graphene compared to graphite is explained by an interference enhancement model. We have also studied the effect of substrates, the top layer deposition, the annealing process, as well as folding (stacking order) on the physical and electronic properties of graphene. Finally, Raman spectroscopy of epitaxial graphene grown on a SiC substrate is presented and strong compressive strain on epitaxial graphene is observed. The results presented here are highly relevant to the application of graphene in nano-electronic devices and help in developing a better understanding of the physical and electronic properties of graphene.

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Section: Nano Researchmentioning

confidence: 99%

Raman spectroscopy and imaging of graphene

et al. 2008

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“…The existence of the two bands was also observed in the spectroscopy of GO@SiO 2 , which demonstrates the successful assembly of GO on SiO 2 . Meanwhile, it was reported that both G and 2D bands can be used to monitor the number of layers [38][39][40]. The G peak of the single-layer graphene shifts to lower wavenumbers, and the 2D band decreases in intensity and lower frequency peaks after stacking more GO layers.…”

Section: Characterizationmentioning

confidence: 99%

Simultaneously improved actuated performance and mechanical strength of silicone elastomer by reduced graphene oxide encapsulated silicon dioxide

Ning

Wang

Zhang

et al. 2015

International Journal of Smart and Nano Materials

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Herein, graphene oxide (GO)-encapsulated silica (SiO 2 ) hybrids (GO@SiO 2 ) were prepared via electrostatic self-assembly of the 3-aminopropyltriethoxysilane (APS)-modified SiO 2 and GO. The as-prepared GO@SiO 2 was introduced into polydimethylsiloxane (PDMS) elastomer to simultaneously increase the dielectric constant (k) and mechanical properties of PDMS. Then, the in situ thermal reduction of GO@SiO 2 / PDMS composites was conducted at 180°C for 2 h to increase the interfacial polarizability of GO@SiO 2 . As a result, the values of k at 1000 Hz are largely improved from 3.2 for PDMS to 13.3 for the reduced GO@SiO 2 (RGO@SiO 2 )/PDMS elastomer. Meanwhile, the dielectric loss of the composites remains low (<0.2 at 1000 Hz). More importantly, the actuated strain at low electric field (5 kV/mm) obviously increases from 0.3% for pure PDMS to 2.59% for the composites with 60 phr of RGO@SiO 2 , an eightfold increase in the actuated strain. In addition, both the tensile strength and elastic modulus are obviously improved by adding 60 phr of RGO@SiO 2 , indicating a good reinforcing effect of RGO@SiO 2 on PDMS. Our goal is to develop a simple and effective way to improve the actuated performance and mechanical strength of the PDMS dielectric elastomer for its wider application.

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“…All measurements were performed using laser powers of ~700 µW. In order to rule out temperature-induced effects, 25 we compared Raman spectra recorded with laser powers ranging from ~150 µW to ~2 mW. No spectral shifts or changes in the line shape were observed.…”

mentioning

confidence: 99%

Probing the Intrinsic Properties of Exfoliated Graphene: Raman Spectroscopy of Free-Standing Monolayers

Berciaud¹,

Ryu²,

Brus³

et al. 2009

Nano Lett.

517

485

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The properties of pristine, free-standing graphene monolayers prepared by mechanical exfoliation of graphite are investigated. The graphene monolayers, suspended over open trenches, are examined by means of spatially resolved Raman spectroscopy of the G-, D-, and 2D-phonon modes. The G-mode phonons exhibit reduced energies (1580 cm -1 ) and increased widths (14 cm -1 ) compared to the response of graphene monolayers supported on the SiO 2 -covered substrate. From analysis of the G-mode Raman spectra, we deduce that the free-standing graphene monolayers are essentially undoped, with an upper bound of 2×10 11 cm -2 for the residual carrier concentration. On the supported regions, significantly higher and spatially inhomogeneous doping is observed. The free-standing graphene monolayers show little local disorder, based on the very weak Raman D-mode response. The two-phonon 2D mode of the free-standing graphene monolayers is downshifted in frequency compared to that of the supported region of the samples and exhibits a narrowed, positively skewed line shape.

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Temperature Dependence of the Raman Spectra of Graphene and Graphene Multilayers

Cited by 1,097 publications

References 37 publications

Raman spectroscopy and imaging of graphene

Raman spectroscopy and imaging of graphene

Simultaneously improved actuated performance and mechanical strength of silicone elastomer by reduced graphene oxide encapsulated silicon dioxide

Probing the Intrinsic Properties of Exfoliated Graphene: Raman Spectroscopy of Free-Standing Monolayers

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