Temperature dependence of the radiation induced change of depletion voltage in silicon PIN detectors

Abstract

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Radiation damage studies of silicon microstrip sensors

“…The full depletion voltage of irradiated samples show annealing at first and then anti-annealing because of different time scales involved in these processes [5]. A calculation results that the both sets of samples have experienced the first annealing and the samples irradiated to 4.2×10 14 protons/cm 2 have increased the full depletion voltage by about 25%.…”

“…Through the development of edge structures which can sustain high bias voltages, p-on-n detectors are shown to work at voltages exceeding ~350 V. An efficient cooling system is, though, required to transmit the heat generated by leakage current in the detectors operated at such a high bias voltage. Since temperature has also a very strong effect on the reverse annealing of the full depletion voltage [4,5,6], operation at lower temperatures makes the detector lifetime longer. Other important issues in choosing pon-n detectors are that the electric field around the strips reduces with irradiation because the junction side moves to the backplane and that they require only one type implantation and are fabricated in simpler true single-sided process.…”

Determination of the Charge Collection Efficiency in Neutron Irradiated Silicon Detectors

“…To shorten the annealing time, it was performed at 60 , which is estimated to be of that at room temperature (for an activation energy of 1.28 eV [15]), i.e., 1000 min at 60 corresponds to 305 days at room temperature. The fluences were measured with an accuracy better than 10%.…”

Radiation-hard strip detectors on oxygenated silicon

“…To investigate the differences between the various detector materials, the first five detectors from Table 1 have been taken through an annealing procedure far beyond the point of the minimal depletion voltage. In order to reduce the time requirements the annealing was performed at 30 • C. This was then scaled to 25 • C using the parametrisation from [10]. The procedure went on until an equivalent annealing time of 32 days at 25 • C was reached.…”