Temperature Dependence of the Quantum Efficiency of Structures with Multiple Quantum Wells InGaN / GaN Under Photo- and Electroluminescence

Generation of Terahertz Radiation in LED Heterostructures with Multiple InGaN/GaN Quantum Wells at Two-Photon Excitation by Femtosecond

“…For these reasons, the signal level of terahertz emission, observed in the present study, was significantly lower, than in [2][3][4][5]. A special feature of our samples is also that they are the functional LED structures [8][9][10] and contain a number of components in addition to the InGaN/GaN layers. In this regard, we additionally checked, if the terahertz signal (for example, due to the optical rectification in GaN) is absent in some of the thin plates of n-and p-GaN and sapphire.…”

Effect of growth temperature of GaN:Mg layer on internal quantum efficiency of LED structures with InGaN/GaN quantum wells

“…As precursors of III-group elements the following metal organic compounds were used: trimethylindium In(CH 3 ) 3 , trimethylgallium Ga(CH 3 ) 3 , triethylgallium Ga(C 2 H 5 ) 3 . As nitrogen For acceptor dopant (magnesium) bis(cyclopentadienyl)magnesium was used.…”

“…The dependence of IQE on excitation power were measured in temperature range 10-300 К. Pulse YAG laser with wavelength 355 nm were used as a pumping source. Detailed description of the measurement condition are presented in [3,4]. EQE was measured at current density 1 A/cm 2 .…”

Temperature Dependence of Quantum Efficiency of InGaN/GaN Led Structures at High Current Density

“…Temperature dependence of external quantum efficiency (EQE) of LED structures based on the multiple InGaN/GaN quantum wells (MQW) was previously investigated in a number of papers, for example [1][2][3][4][5][6][7]. In these studies, the two main ways of excitation were used: laser radiation pumping in the photoluminescence (PL) regime and electric current pumping in the electroluminescence (EL) regime.…”

“…A distinctive feature of the PL regime is the ability to completely or partially exclude the carrier leakage from the active region using the selective excitation of quantum wells. In this case, both the temperature and power dependences of the quantum efficiency can be described in terms of the ABC-model of recombination that takes into account the Shockley-Read, radiative, and Auger recombinations [6,7]. Nevertheless, in some of studies, the deviations from this model are observed.…”