Temperature dependence of the InP(001) bulk and surface dielectric function

Zorn, M.; Trepk, T.; Zettler, J.‐T.; Junno, B.; Meyne, C.; Knorr, K.; Wethkamp, T.; Klein, M.; Miller, Mark S.; Richter, Wolfgang; Samuelson, Lars

doi:10.1007/s003390050588

Cited by 51 publications

(18 citation statements)

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“…1. The principal characteristic is a positive peak at around ARTICLE IN PRESS 2.8 eV which has been assigned to P dimers oriented along the ½ 1 1 0 direction [13]. A phosphorus-rich surface reconstruction with a (2 Â 1) symmetry for the P-stabilized InP(1 0 0) surface exhibits a higher amplitude at 2.8 eV compared to a less-phosphorus-rich surface reconstruction during InP growth ( Fig.…”

Section: Resultsmentioning

confidence: 97%

Growth monitoring of GaAsSb:C/InP heterostructures with reflectance anisotropy spectroscopy

Brunner¹,

Weeke²,

Zorn³

et al. 2004

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 97%

Growth monitoring of GaAsSb:C/InP heterostructures with reflectance anisotropy spectroscopy

Brunner¹,

Weeke²,

Zorn³

et al. 2004

Journal of Crystal Growth

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“…[58] explains these spectral changes as due to the transition from a In-rich surface to a less In-rich stoichiometry. The assumption of a stoichiometry-related RAS is backed by the works of Zorn et al [62] and Postigo and co-workers [63], who observe similar modifications in their RAS spectra measured at varying phosphorus partial pressure. For comparison, we also show a room temperature (RT) spectrum measured by Kinsky and co-workers [59] at an In-rich InP(001) surface.…”

Section: Independent-particle Approximationmentioning

confidence: 91%

Calculation of reflectance anisotropy for semiconductor surface exploration

Schmidt

2005

Physica Status Solidi (b)

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Reflectance anisotropy spectroscopy (RAS) is exquisitely sensitive to probe surfaces, with many potential applications in determining surface geometries or monitoring material growth. Thanks to recent computational and methodological progress it has now become possible to calculate surface optical spectra accurately and with true predictive power. Here I review briefly the simulation of RAS spectra and discuss recent methodological advances, which allow for the modelling of self-energy, excitonic and local-field effects in large and complex systems. Numerical results for semiconductor surfaces in comparison to measured data are used to illustrate the potential and limits of the different levels of theory.

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“…1 shows RA spectra for the OFF state and the ON state for each material at 550 1C. All spectra and corresponding surface reconstructions were identified according to the literature as described in the figure [5][6][7][8]. For all the materials except for InP, the spectra in the OFF/ON states are clearly different, corresponding to different surface reconstructions.…”

Section: Methodsmentioning

confidence: 99%