2000
DOI: 10.1103/physrevb.62.r11989
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Temperature dependence of the Hall effect in single-layer and bilayerBi2Sr2Ca

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2001
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Cited by 51 publications
(68 citation statements)
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“…For this reason, the Hall angle will naturally become tan θ H ∼ 1/T 2 for this phase. These results are clearly consistent with the experimental data 6,7,[43][44][45] . We now move on to the most puzzling aspect of the transport properties of the strange metal phase observed in many correlated systems.…”
Section: −1supporting
confidence: 92%
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“…For this reason, the Hall angle will naturally become tan θ H ∼ 1/T 2 for this phase. These results are clearly consistent with the experimental data 6,7,[43][44][45] . We now move on to the most puzzling aspect of the transport properties of the strange metal phase observed in many correlated systems.…”
Section: −1supporting
confidence: 92%
“…Hence, in view of the fact that this latter relaxation mechanism results in a dc resistivity given by ρ disorder xx ∼ T 2 , we may conclude that the Hall angle at least at optimal doping would also become described by tan θ H ∼ 1/T 2 within this scenario. This could provide a rationale for the explanation of the thus far mysterious separation of lifetimes, which is observed experimentally in many correlated systems reported in the literature 6,7 . Note that the above result for the Hall angle depends crucially on the mechanism for the emergent (exact) particle-hole symmetry that exists in the low-energy fixed point of the hot spot model.…”
Section: −1mentioning
confidence: 57%
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“…In particular, the model is shown to provide a natural explanation for the non-universal power law behavior of cotΘ H (T ) observed in the Bi-based cuprates. 13,14 Finally, in section IV, justification arguments for this particular choice of scattering rate are presented and the implications of this phenomenological model for the physics of HTC across the phase diagram are discussed, with suggestions for future study. In the process, I challenge two of the previously established paradigms of the normal state in HTC; namely the linear low-T behavior of ρ ab (T ) and the relevance of the non-saturating ρ ab (T ) observed at higher temperatures.…”
mentioning
confidence: 99%
“…The doping evolution of the resistivity is given elsewhere [11]. The above described annealing procedure induces successive changes in the carrier content in the film in a controlled and reversible way [12].…”
mentioning
confidence: 99%