Temperature dependence of the fundamental energy gap in GaAs

Kim, C.K.; Lautenschlager, P.; Cardona, M.

doi:10.1016/0038-1098(86)90632-0

Cited by 62 publications

(15 citation statements)

References 31 publications

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“…In general, temperature variations of the energy gap are due to both lattice constant variations and interactions with relevant acoustic and optical phonons. According with existing theory 25,[32][33][34] this leads to a value of Â jB ðÂ 0 jB Þ significantly small than Â j LO . From Tables I and II, it can be seen that our observations agree well with this theoretical consideration.…”

Section: Resultsmentioning

confidence: 92%

Temperature Dependence of the Band-Edge Transitions of ZnCdBeSe

Hsieh

Huang

et al. 2004

Jpn. J. Appl. Phys.

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We have characterized the temperature dependence of band-edge transitions of three (Zn 0:38 Cd 0:62 ) 1Àx Be x Se II-VI films with different Be concentrations x by using contactless electroreflectance (CER) and piezoreflectance (PzR) in the temperature range of 15 to 450 K. By a careful comparison of the relative intensity of PzR and CER spectra, the identification of light-hole (lh) and heavy-hole (hh) character of the excitonic transitions of the samples has been accomplished. The temperature dependence analysis yields information on the parameters that describe the temperature variations of the energy (including thermal expansion effects) and broadening parameter of the band edge transitions of ZnCdBeSe. The study shows that Be incorporation can effectively reduce the rate of temperature variation of the energy gap.

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Section: Resultsmentioning

confidence: 92%

Temperature Dependence of the Band-Edge Transitions of ZnCdBeSe

Hsieh

Huang

et al. 2004

Jpn. J. Appl. Phys.

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“…These expressions are equivalent to the Bose-Einstein model functions proposed by Viña et al 30 For a variety of group-IV and III-V semiconductor materials, 28,29,44 as well as for ZnS, 47,48 ZnSe, [12][13][14]47,48 and ZnTe, [16][17][18]47,48 Varshni's formula: 28 E Var. ͑ T ͒ϭE͑ 0 ͒Ϫ ␣T 2 ␤ϩT , ͑15͒…”

Section: Assessment Of Published Three-parameter Modelsmentioning

confidence: 90%

Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films

Pässler

Griebl

Riepl

et al. 1999

Journal of Applied Physics

136

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High-quality ZnS, ZnSe, and ZnTe epitaxial films were grown on ͑001͒-GaAs-substrates by molecular beam epitaxy. The 1s-exciton peak energy positions have been determined by absorption measurements from 2 K up to about room temperature. For ZnS and ZnSe additional high-temperature 1s-exciton energy data were obtained by reflectance measurements performed from 300 up to about 550 K. These complete E 1s (T) data sets are fitted using a recently developed analytical model. The high-temperature slopes of the individual E 1s (T) curves and the effective phonon temperatures of ZnS, ZnSe, and ZnTe are found to scale almost linearly with the corresponding zero-temperature energy gaps and the Debye temperatures, respectively. Various ad hoc formulas of Varshni type, which have been invoked in recent articles for numerical simulations of restricted E 1s (T) data sets for cubic ZnS, are discussed.

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“…(7.15) with respect to T, we obtain process) and Fan (self-energy) term (one-phonon process)]. 76,78 Vina et al 79 have, thus, proposed a temperature dependence with an equation containing the Bose-Einstein occupation factor for phonons:…”

Section: Temperaturementioning

confidence: 95%

“…The effects of thermal expansion and electron-phonon interaction in GaAs have been theoretically studied 78,83 and separated explicitly for the E 0 CP as a function of temperature. 78 the E g x and E" gaps for AlAs. The data obtained by him are as follows: dE g x /dT=-3.6xlO-4 eV/K and dE"/dT=-5.1xl0-4 eV/K.…”

Section: Temperaturementioning

confidence: 99%

Energy-Band Structure: Energy-Band Gaps of Bulk Materials

Adachi¹

1994

GaAs and Related Materials

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The wave function TCr) of the electrons in the crystal lattice is expressed by the well-known Bloch's theorem:where the function U k (r) has the period of the crystal lattice such mat U k (r)=U k (r+T) (here T is any vector of the Bravais lattice). The nearly free-electron approximation is a good standing point for discussing the energy band theory. It explains the origin of the band gap and that of the effective mass m* which is defined as the reciprocal of the curvature of E (energy) versus k (wavevector) diagram. The functional dependence of E on k for the various bands, E"(k), is defined by the Schrodinger equation:HT(r) = _EL + V(r) = E^r) (7.2) 2m* where p 2 /2m* is the kinetic energy (p=-ihV), V(r) is the potential energy, and E is the energy eigenvalue. Since the electrons in the crystal are influenced by the periodic potential, the electron mass m* used in Eq. (7.2) differs largely from the free electron mass m<, (see Chapter 8).The reciprocal space, also called phase space, k-space, and momentum space, is a convenient tool to describe the behavior of both vibrational states and electronic states. The coordinate axes of the reciprocal lattice are the wavevectors of the plane waves corresponding to the vibrational modes (Section 5.

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Temperature dependence of the fundamental energy gap in GaAs

Cited by 62 publications

References 31 publications

Temperature Dependence of the Band-Edge Transitions of ZnCdBeSe

Temperature Dependence of the Band-Edge Transitions of ZnCdBeSe

Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films

Energy-Band Structure: Energy-Band Gaps of Bulk Materials

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