Temperature Dependence of the Energy Gap of Semiconductors in the Low-Temperature Limit

Cardona, M.; Meyer, Thomas Alexander; Thewalt, M. L. W.

doi:10.1103/physrevlett.92.196403

Cited by 86 publications

(85 citation statements)

References 18 publications

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“…(9) as far as the dependence on Ω q for acoustic phonons is concerned. This leads to a T 4 temperature dependence of the gap shift for T< 0.01 T D which, till the appearance of [29], had not been reported.…”

Section: Temperature Dependence Of Energy Gaps At Very Low Temperaturmentioning

confidence: 99%

“…The different location in k-space leads to the fact that the thermal expansion effect has the same sign as the electron-phonon interaction for Ge but the opposite one for Si. In the case of Si, the expansion effect is rather small because of the small value of a (see Eq.1) [29]. The temperature dependence of the indirect gaps of Ge and Si has been known for half a century [36].…”

Section: Absorption Edges Of Germanium and Siliconmentioning

confidence: 99%

“…The temperature dependence of the indirect gaps of Ge and Si has been known for half a century [36]. Semiempirical analytic expressions for this dependence have been proposed, starting with the rather popular (but incorrect at low T [29]) Varshni expression [37].…”

Section: Absorption Edges Of Germanium and Siliconmentioning

confidence: 99%

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Electron–phonon interaction in tetrahedral semiconductors

Cardona

2005

Solid State Communications

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Considerable progress has been made in recent years in the field of ab initio calculations of electronic band structures of semiconductors and insulators. The oneelectron states (and the concomitant two-particle excitations) have been obtained without adjustable parameters, with a high degree of reliability. Also, more recently, the electron-hole excitation frequencies responsible for optical spectra have been calculated. These calculations, however, are performed with the constituent atoms fixed in their crystallographic positions and thus neglect the effects of the lattice vibrations (i.e. electron-phonon interaction) which can be rather large, even larger than the error bars assumed for ab initio calculations.Effects of electron-phonon interactions on the band structure can be experimentally investigated in detail by measuring the temperature dependence of energy gaps or critical points (van Hove singularities) of the optical excitation spectra. These studies have been complemented in recent years by observing the dependence of such spectra on isotopic mass whenever different stable isotopes of a given atom are available at affordable prices. In crystals composed of different atoms, the effect of the vibration of each separate atom can thus be investigated by isotopic substitution. Because of the zero-point vibrations, such effects are present even at zero temperature (T = 0).In this paper we discuss state-of-the-art calculations of the dielectric function spectra and compare them with experimental results, with emphasis on the differences introduced by the electron-phonon interaction. The temperature dependence of various optical parameters will be described by means of one or two (in a few cases three) Einstein oscillators, except at the lowest temperatures where the T 4 law (contrary to the Varshni T 2 result) will be shown to apply. Increasing an isotopic mass increases the energy gaps, except in the case of monovalent Cu (e.g., CuCl) and possibly Ag (e.g., AgGaS 2 ). It will be shown that the gaps of tetrahedral materials containing an element of the first row of the periodic table (C,N,O) are strongly affected by the electron-phonon interaction. It will be conjectured that this effect is related to the superconductivity recently observed in heavily boron-doped carbon.

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Section: Temperature Dependence Of Energy Gaps At Very Low Temperaturmentioning

confidence: 99%

Section: Absorption Edges Of Germanium and Siliconmentioning

confidence: 99%

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Electron–phonon interaction in tetrahedral semiconductors

Cardona

2005

Solid State Communications

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161

141

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“…The Pässler-p model shows a T p [1] dependence for T < 0.02 Θ D with p = 4. For several semiconductor materials E g (T) still shows a T p -dependence with the increase of temperature, but for values of p in the range from 2 up to 3.3.…”

Section: Introductionmentioning

confidence: 99%

“…At low (T < 0.02 Θ D , where Θ D is the Debye temperature) and intermediary temperatures (T = Θ D ) the decrease of E g (T) is non-linear. For high temperatures (T >> Θ D ) the energy gap decreases linearly with temperature [1][2][3]. The linear decrease of E g (T) occurs due to the contribution of two distinct mechanisms: the electron-phonon interaction and the thermal expansion of the lattice [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs

et al. 2010

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In this work we report on a comparison of some theoretical models usually used to fit the dependence on temperature of the fundamental energy gap of semiconductor materials. We used in our investigations the theoretical models of Viña, Pässler-p and Pässler-ρ to fit several sets of experimental data, available in the literature for the energy gap of GaAs in the temperature range from 12 to 974 K. Performing several fittings for different values of the upper limit of the analyzed temperature range (T max ), we were able to follow in a systematic way the evolution of the fitting parameters up to the limit of high temperatures and make a comparison between the zero-point values obtained from the different models by extrapolating the linear dependence of the gaps at high T to T = 0 K and that determined by the dependence of the gap on isotope mass. Using experimental data measured by absorption spectroscopy, we observed the non-linear behavior of E g (T) of GaAs for T > Θ D .

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Basic Properties of Diamond: Phonon Spectra, Thermal Properties, Band Structure

Davies

2009

CVD Diamond for Electronic Devices and Sensors

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Temperature Dependence of the Energy Gap of Semiconductors in the Low-Temperature Limit

Cited by 86 publications

References 18 publications

Electron–phonon interaction in tetrahedral semiconductors

Electron–phonon interaction in tetrahedral semiconductors

Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs

Basic Properties of Diamond: Phonon Spectra, Thermal Properties, Band Structure

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