Temperature dependence of the electrical resistivity of reactively sputtered TiN films

Tsai, W.; Delfino, M.; Fair, J. A.; Hodul, D.

doi:10.1063/1.352785

Cited by 48 publications

(21 citation statements)

References 28 publications

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“…Bulk TiN material is a superconductor with a transition temperature below 6 K. 1 Experiments have demonstrated that the critical temperature of thin TiN films decreases with decreasing thickness, i.e., with increase of the sheet resistance (in the normal state). 2,3 Furthermore, the critical temperature of the TiN films can be controlled over a wide range (0 < T c < 5 K) by varying the N 2 concentration during the deposition. 1,4,5 The superconducting transitions remain sharp over the whole range of T c values.…”

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confidence: 99%

The electron-phonon relaxation time in thin superconducting titanium nitride films

Кардакова

Finkel

Morozov

et al. 2013

Applied Physics Letters

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We report on the direct measurement of the electron-phonon relaxation time, ! eph , in disordered TiN films. Measured values of ! eph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T -3 temperature dependence. The electronic density of states at the Fermi level N 0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.

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confidence: 99%

The electron-phonon relaxation time in thin superconducting titanium nitride films

Кардакова

Finkel

Morozov

et al. 2013

Applied Physics Letters

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“…In single-crystalline TiN the electrical resistivity at room temperature is 18 µΩ cm [55]. Resistivities of polycrystalline films are typ- ically in the range of 25-1000 µΩ cm [75,[83][84][85]. Such an increase in resistivity from a single-crystal to a polycrystalline film is due to scattering from the grain boundaries, vacancies and possibly also oxynitrides associated with the polycrystalline TiN [83,86].…”

Section: Electronic and Optical Propertiesmentioning

confidence: 94%

High-resolution characterization of TiN diffusion barrier layers

Mühlbacher¹

2015

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Titanium nitride (TiN) films are widely applied as diffusion barrier layers in microelectronic devices. The continued miniaturization of such devices not only poses new challenges to material systems design, but also puts high demands on characterization techniques. To gain understanding of diffusion processes that can eventually lead to failure of the barrier layer and thus of the whole device, it is essential to develop routines to chemically and structurally investigate these layers down to the atomic scale. In the present study, model TiN diffusion barriers with a Cu overlayer acting as the diffusion source were grown by reactive magnetron sputtering on MgO(001) and thermally oxidized Si(001) substrates. Cross-sectional transmission electron microscopy (XTEM) of the pristine samples revealed epitaxial, single-crystalline growth of TiN on MgO(001), while the polycrystalline TiN grown on Si(001) exhibited a [001]-oriented columnar microstructure. Various annealing treatments were carried out to induce diffusion of Cu into the TiN layer. Subsequently, XTEM images were recorded with a high-angle annular dark field detector, which provides strong elemental contrast, to illuminate the correlation between the structure and the barrier efficiency of the single- and polycrystalline TiN layers. Particular regions of interest were investigated more closely by energy dispersive X-ray (EDX) mapping. These investigations are completed by atom probe tomography (APT) studies, which provide a three-dimensional insight into the elemental distribution at the near-interface region with atomic chemical resolution and high sensitivity. In case of the single-crystalline barrier, a uniform Cu-enriched diffusion layer of 12 nm could be detected at the interface after an annealing treatment at 1000 °C for 12 h. This excellent barrier performance can be attributed to the lack of fast diffusion paths such as grain boundaries. Moreover, density-functional theory calculations predict a stoichiometry-dependent atomic diffusion mechanism of Cu in bulk TiN, with Cu diffusing on the N-sublattice for the experimental N/Ti ratio. In comparison, the polycrystalline TiN layers exhibited grain boundaries reaching from the Cu-TiN interface to the substrate, thus providing direct diffusion paths for Cu. However, the microstructure of these columnar layers was still dense without open porosity or voids, so that the onset of grain boundary diffusion could only be found after annealing at 900 °C for 1 h. The present study shows how to combine two high resolution state-of-the-art methods, TEM and APT, to characterize model TiN diffusion barriers. It is shown how to correlate the microstructure with the performance of the barrier layer by two-dimensional EDX mapping and three-dimensional APT. Highly effective Cu-diffusion barrier function is thus demonstrated for single-crystal TiN(001) (up to 1000 °C) and dense polycrystalline TiN (900 °C)

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“…Thin-film nitride structures are widely used in microelectronics and other technological applications as barrier layers in multilevel contact systems of integrated circuits; surface-hardening, corrosion-resistant, and decorative coatings; and thermistor materials [1][2][3][4][5][6][7][8][9][10][11][12]. Potential applications of thin-film materials in solidstate electronics depend on their temperature-dependent resistivity and thermoelectric power [13].…”

Section: Introductionmentioning

confidence: 99%

“…The electrical and thermoelectric properties of reactively sputtered films (primarily TiN films) were described in many reports [2,4,5,[7][8][9][10][11][12]. At the same time, little or no data exists on the properties of films produced by ion implantation, the most effective approach to improving the physicochemical properties of materials [14,15].…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of films grown on W and Mo substrates by titanium ion implantation in nitrogen atmosphere

Ignatenko

Badekin

2005

Inorg Mater

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Films consisting of alternating nitride and oxide layers differing in phase composition and structure are grown on polycrystalline tungsten and molybdenum substrates by ion implantation. The resistivity and thermoelectric power of the films are measured as functions of temperature, and the temperature coefficient of their resistance is determined. The phase composition and electrical properties of the films are shown to be governed by the nitrogen-ion dose delivered to the titanium target.

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Temperature dependence of the electrical resistivity of reactively sputtered TiN films

Cited by 48 publications

References 28 publications

The electron-phonon relaxation time in thin superconducting titanium nitride films

The electron-phonon relaxation time in thin superconducting titanium nitride films

High-resolution characterization of TiN diffusion barrier layers

Electrical properties of films grown on W and Mo substrates by titanium ion implantation in nitrogen atmosphere

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