2007
DOI: 10.1134/s1063782607080040
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Temperature dependence of the band structure of ZnS, ZnSe, ZnTe, and CdTe wurtzite-type semiconductor compounds

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Cited by 12 publications
(20 citation statements)
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“…ZnS and ZnSe are characterized by large band gaps (respectively 3.5 and 2.8 eV [91] ), therefore their absorption contribution in the visible spectrum is usually negligible, and their luminescence is generally in the blue-green region of the vis spectrum, where few PV cells are exhibiting top spectral responsivity. ZnS and ZnSe are characterized by large band gaps (respectively 3.5 and 2.8 eV [91] ), therefore their absorption contribution in the visible spectrum is usually negligible, and their luminescence is generally in the blue-green region of the vis spectrum, where few PV cells are exhibiting top spectral responsivity.…”
Section: Ternary Alloys and Environmentally Friendly Chalcogenidesmentioning
confidence: 99%
“…ZnS and ZnSe are characterized by large band gaps (respectively 3.5 and 2.8 eV [91] ), therefore their absorption contribution in the visible spectrum is usually negligible, and their luminescence is generally in the blue-green region of the vis spectrum, where few PV cells are exhibiting top spectral responsivity. ZnS and ZnSe are characterized by large band gaps (respectively 3.5 and 2.8 eV [91] ), therefore their absorption contribution in the visible spectrum is usually negligible, and their luminescence is generally in the blue-green region of the vis spectrum, where few PV cells are exhibiting top spectral responsivity.…”
Section: Ternary Alloys and Environmentally Friendly Chalcogenidesmentioning
confidence: 99%
“…The correct approach [15] at high temperatures is to first perform electronic structure calculations using the ES(DWF) formalism and use the results obtained to calculate the self-energy corrections. This formalism is the first recourse to account for the changes in valence electron properties in semiconductors and metals [29][30][31][32][33][34][35]. Frequently in practice, only the DWF is incorporated through the ES(DWF) formalism and the results are compared with experiments [29][30][31][32][33][34][35].…”
Section: Literature Because Analysis Of Diffraction Data Always Incomentioning
confidence: 99%
“…The core energy terms have been obtained from diffraction theory [20] according to which the core potentials are given by Eq.7 and Eq.13. But Eq.7 and Eq.13 are also the core potentials used in the ES(DWF) formalism [15,[29][30][31][32][33][34][35]. Thus, diffraction theory is completely compatible with ES(DWF) formalism.…”
Section: Literature Because Analysis Of Diffraction Data Always Incomentioning
confidence: 99%
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“…На відповідних диферен-ціальних кривих R' ω спостерігається головна особливість при ħω = 2,89 еВ. Отримане зна-чення добре узгоджується з літературними да-ними, за якими E g = 2,88 еВ [8]. Особливості при 2,96 еВ та 3,26 еВ визначаються оптич-ними переходами за участю підзон валентної зони, відщеплених під дією кристалічного поля ∆ CR і спін-орбітальної взаємодії ∆ SO .…”
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