Temperature dependence of stress in CVD diamond films studied by Raman spectroscopy

Dychalska, Anna; Fabisiak, K.; Paprocki, K.; Dudkowiak, Alina; Szybowicz, Mirosław

doi:10.1515/msp-2015-0064

Cited by 10 publications

(3 citation statements)

References 17 publications

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“…12.b shows minimal shift between the free-standing diamond film reference and at various regions on the grown sample. The free-standing film shows a marginal compressive shift to the value of 1332.8 ±0.02 cm −1 from the typically observed value of 1332.5 cm −1 [45,54]. In contrast to the GaN/III-N spectra which all show tensile shifts from the reference GaN-on-Si wafer, the diamond peaks in both samples show varying global shifts from the reference film; compressive shifts for the 0.5 mm sample and tensile shifts for the 2 mm sample.…”

Section: Raman Spectroscopymentioning

confidence: 71%

Thermal stress modelling of diamond on GaN/III-Nitride membranes

Cuenca

Smith

Field

et al. 2021

Carbon

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Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemical vapour deposition (CVD) of diamond directly onto a III-nitride (III-N) heterostructure membrane induces significant thermal stresses. In this work, these thermal stresses are investigated using an analytical approach, a numerical model and experimental validation. The thermal stresses are

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Section: Raman Spectroscopymentioning

confidence: 71%

Thermal stress modelling of diamond on GaN/III-Nitride membranes

Cuenca

Smith

Field

et al. 2021

Carbon

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“…The peak at around 1332 cm −1 is the diamond peak [71,72], however, it is clearly shifted towards higher wavenumbers and is heavily convoluted with additional bands. This is likely due to stress in the diamond thin film [73,74,75,76,77]. Accurate determination of the stress magnitude requires appropriate deconvolution of the spectra.…”

Section: Raman Spectroscopymentioning

confidence: 99%

Surface zeta potential and diamond growth on gallium oxide single crystal

Mandal,

Arts,

Knoops

et al. 2021

Preprint

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In this work a strategy to grow diamond on β-Ga 2 O 3 has been presented. The ζ-potential of the β-Ga 2 O 3 substrate was measured and it was found to be negative with an isoelectric point at pH ∼ 4.6. The substrates were seeded with mono-dispersed diamond solution for growth of diamond. The seeded substrates were etched when exposed to diamond growth plasma and globules of gallium could be seen on the surface. To overcome the problem ∼100 nm of SiO 2 and Al 2 O 3 were deposited using atomic layer deposition. The nanodiamond seeded SiO 2 layer was effective in protecting the β-Ga 2 O 3 substrate and thin diamond layers could be grown. In contrast Al 2 O 3 layers were damaged when exposed to diamond growth plasma. The thin diamond layers were characterised with scanning electron microscopy and Raman spectroscopy. Raman spectroscopy revealed the diamond layer to be under compressive stress of 1.3 -2.8GPa.

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“…2. It could also be the result of thermal expansion coefficient difference between diamond film and fused silica glass [29].…”

Section: In Case Of [B]/[c]mentioning

confidence: 99%

Gas Composition Influence on the Properties of Boron-Doped Diamond Films Deposited on the Fused Silica

Dec

Ficek

Rycewicz

et al. 2018

Materials Science-Poland

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The main subject of this study are molecular structures and optical properties of boron-doped diamond films with [B]/[C]ppm ratio between 1000 and 10 000, fabricated in two molar ratios of CH4-H2mixture (1 % and 4 %). Boron-doped diamond (BDD) film on the fused silica was presented as a conductive coating for optical and electronic purposes. The scanning electron microscopy images showed homogenous and polycrystalline surface morphology. The Raman spectroscopy confirmed the growth of sp3diamond phase and sp2carbon phase, both regular and amorphous, on the grain boundaries, as well as the efficiency of boron doping. The sp3/sp2ratio was calculated using the Raman spectra deconvolution method. A high refractive index (in a range of 2.0 to 2.4 at λ= 550 nm) was achieved for BDD films deposited at 700 °C. The values of extinction coefficient were below 1.4 at λ= 550 nm, indicating low absorption of the film

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Temperature dependence of stress in CVD diamond films studied by Raman spectroscopy

Cited by 10 publications

References 17 publications

Thermal stress modelling of diamond on GaN/III-Nitride membranes

Thermal stress modelling of diamond on GaN/III-Nitride membranes

Surface zeta potential and diamond growth on gallium oxide single crystal

Gas Composition Influence on the Properties of Boron-Doped Diamond Films Deposited on the Fused Silica

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