Temperature dependence of steady-state photoconductivity in hydrogenated amorphous silicon

Smail, Ted Jini; Mohammed‐Brahim, Tayeb

doi:10.1080/13642819108207629

Cited by 19 publications

(13 citation statements)

References 33 publications

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“…In addition, the low c v n provides a low recombination rate through the valence band tail states, which in this way may act as safe hole traps. The existence of the safe hole traps has been earlier proposed to explain the peculiar phenomena of optical [42] and thermal quenching of photoconductivity [43][44][45][46][47][48][49] in aSi:H. Therefore, the presence of these traps in a-Si:H is also related to a characteristic negative Φ or phase lead (see Figure 12(b)). For temperatures around 120-150 K trapping-detrapping in the conduction band tail is experimentally confirmed, as well as by model simulations, to dominate over the recombination term.…”

Section: Philosophical Magazine 2467mentioning

confidence: 90%

Determination of trapping–detrapping events, recombination processes and gap-state parameters by modulated photocurrent measurements on amorphous silicon

Pomoni

Kounavis

2014

Philosophical Magazine

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Analysis of the out-of-phase modulated photocurrent (MPC) signal, the so-called Y signal, is proposed for determining the trapping-detrapping events, recombination processes and gap-state parameters in amorphous silicon. This is demonstrated by analysing experimental Y spectra obtained on this material from different laboratories including our own. Model simulations are also employed in which the amphoteric nature of the dangling bonds and their distribution according to the defect-pool model are taken into account. From the reconstruction of the Y signal, phase shift and MPC amplitude spectra, several contributions resolved from the frequency dependence of the experimental Y spectra are identified. Two electron trappingdetrapping processes are resolved. These are attributed to hydrogen-related positive defects and to transitions involving the D +/0 level of the normal dangling bonds from the defect-pool distribution. At lower frequencies a residual contribution is resolved that is attributed to a term related to recombination through the D +/0 and D 0/− levels. Between 300 and 150 K the above recombination contribution is essentially from the D 0/− and dominates the Y signal at lower frequencies. In this region a characteristic phase lead appears, which is attributed to the existence of safe hole traps in the valence band tail. Around 150 K, trapping-detrapping events in the conduction band tail dominate.

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Section: Philosophical Magazine 2467mentioning

confidence: 90%

Determination of trapping–detrapping events, recombination processes and gap-state parameters by modulated photocurrent measurements on amorphous silicon

Pomoni

Kounavis

2014

Philosophical Magazine

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“…Here, we give only the main equations of the correlated states statistics and the details are reported in Smaïl and Mohammed-Brahim [8], Vaillant and Jouse [10] and recently in Dhariwal and Rajvanshi [11].…”

Section: Density Of States In the Grain Boundariesmentioning

confidence: 97%

“…An extension of these statistics to continuous distribution of states was given by Simmons and Taylor [7]. Here, the equations reported in Smaïl and Mohammed-Brahim [8] are used.…”

Section: Density Of States In the Grain Boundariesmentioning

confidence: 99%

Dependence of photovoltaic parameters on grain size and density of states in n+–i–p+ and p+–i–n+ polycrystalline silicon solar cells

2007

Self Cite

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“…Figure 4 shows the U-type under-light conductance behavior before and after oxygen adsorption using two light intensities. 8 The activation energy of the maximum is 0.30 eV for the U-type samples and 0.80 eV for the C-type samples. 8 A thermal quenching of the conductance under light, characterized by a maximum and a minimum, appears in the curve.…”

Section: A Conductancementioning

confidence: 95%

“…3͒, one donor center is sufficient to fit the signature and the ratio variations. 8 Such under-light conductance variation with temperature is directly linked to free carrier recombination processes and is widely used to understand them in a-Si:H. Particularly it was found that the conductance maximum is determined by an equilibrium of the exchanges between all the different gap states. It is characteristic of many photoconducting semiconductors and particularly of hydrogenated amorphous silicon.…”

Section: A Conductancementioning

confidence: 99%

Acceptor and donor centers introduced by oxygen ionosorption at the a-Si:H film surface

Aoucher

Mohammed‐Brahim

Fortin

1996

Journal of Applied Physics

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The reversible interaction between molecular oxygen and hydrogenated amorphous silicon films is studied using conductance, photoconductance, and thermally stimulated current measurements versus temperature. The effect of the oxygen ionosorption on the electrical properties of the film has been found to be reversible. Using thermally stimulated desorption treatment, the electronic centers introduced at the film surface by the ionosorption of oxygen are highlighted. They can be described by a donor and acceptor behavior. The numerical analysis proposed corroborates the experimental interpretation. The oxygen may act equally as donor center or as acceptor center or simultaneously as acceptor and donor center localized at the a-Si:H film surface.

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Temperature dependence of steady-state photoconductivity in hydrogenated amorphous silicon

Cited by 19 publications

References 33 publications

Determination of trapping–detrapping events, recombination processes and gap-state parameters by modulated photocurrent measurements on amorphous silicon

Determination of trapping–detrapping events, recombination processes and gap-state parameters by modulated photocurrent measurements on amorphous silicon

Dependence of photovoltaic parameters on grain size and density of states in n+–i–p+ and p+–i–n+ polycrystalline silicon solar cells

Acceptor and donor centers introduced by oxygen ionosorption at the a-Si:H film surface

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