Temperature dependence of spin injection efficiency in an epitaxially grown Fe/GaAs hybrid structure

Lee, Tae Hwan; Koo, Hyun Cheol; Kim, Kyung Ho; Kim, Hyung jun; Chang, Joonyeon; Han, Suk Hee; Hong, Jinki; Lim, Sang Ho

doi:10.1016/j.jmmm.2009.07.037

Cited by 7 publications

(4 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, on the semiconductor side (the 5 th to 8 th layers), the spin polarization is high and is non-negligible, even up to the last layer. The average spin injection efficiency over all four layers is approximately 30%, which is higher than (almost double) what is observed for Fe/GaAs heterostructures 25 . This implies a long spin diffusion length in Fe 16 N 2 /InGaAs systems.…”

Section: Fe16n2 As a Spin Injectormentioning

confidence: 55%

First-principles study of the complex magnetism in Fe16N2

Bhattacharjee

Lee

2019

Sci Rep

View full text Add to dashboard Cite

Magnetic exchange interactions in pure and vanadium (V)-doped Fe 16 N 2 are studied within the framework of density functional theory (DFT). The Curie temperatures were obtained via both mean field approximation (MFA) and Monte Carlo (MC) calculations based on interactions that were obtained through DFT. The Curie temperature (T C ) for pure Fe 16 N 2 that was obtained under MFA is substantially larger than the experimental value, suggesting the importance of thermal fluctuations. At zero field, the calculated magnetic susceptibility shows a sharp peak at T = T C that corresponds to the presence of localized d-states. From the nature of the exchange interactions, we have determined the reason for the occurrence of the giant magnetic moment in this material, which remained a mystery for decades. Finally, we posit that Fe 16 N 2 can also act as a satisfactory spin injector for III–V semiconductors, in addition to its application as a permanent magnet, since it has very high spin polarization (compared to elemental ferromagnets) and smaller lattice mismatch (compared to half-metallic Heusler alloys) with conventional III–V semiconductors such as GaAs and InGaAs. We demonstrate this application in the case of Fe 16 N 2 (001)/InGaAs(001) hetero-structures, which exhibit substantial spin polarization in the semiconductor (InGaAs) region. PACS number: 82.65.My, 82.20.Pm, 82.30.Lp, 82.65.Jv.

show abstract

Section: Fe16n2 As a Spin Injectormentioning

confidence: 55%

First-principles study of the complex magnetism in Fe16N2

Bhattacharjee

Lee

2019

Sci Rep

View full text Add to dashboard Cite

show abstract

“…The generation and control including filtering of spin currents are key for the application to devices [17][18][19][20][21][22][23]. Spin currents are classified into three types: spin-polarized current, fully spin-polarized current, and pure spin current.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of spin valve junctions based on Fe₃Si/FeSi₂/Fe₃Si trilayered films

Asai¹,

Sakai²,

Ishibashi³

et al. 2015

Proc. Int. Conf. And Summer School on Advanced Silicide Technology 2014

View full text Add to dashboard Cite

Fe3Si/FeSi2/Fe3Si trilayered junctions were prepared on Si(111) by facing targets direct-current sputtering combined with a mask method, and spin valve signals in current-perpendicular-to-plane (CPP) geometry was investigated for the change of the magnetization alignment. The shape of magnetization curves evidently exhibited that an antiparallel alignment is realized owing to a difference in the coercive force between the top and bottom Fe3Si layers. The electrical resistance was alternately changed for the formation of parallel and antiparallel alignments with the magnetic field. The spin valve signals in the Fe3Si/FeSi2/Fe3Si trilayered junctions were experimentally demonstrated.

show abstract

“…In the semiconductor side on the other hand (5 th to 8 th layer) spin polarization is quite high and is non-negligible even upto the last layer. If we consider the average spin injection efficiency it is about 30% averaged over all the four layers which is quite higher than(almost double) than what is observed for Fe/GaAs heterostructures [27]. This implies a long spin diffusion length in Fe 16 N 2 /InGaAs systems.…”

Section: A Structural Sensitivity and Magnetism: Constrained Magnetic...mentioning

confidence: 73%

Uncovering the puzzle of complex magnetism in Fe16N2: a first-principles based study

Bhattacharjee,

Lee

2018

Preprint

View full text Add to dashboard Cite

The electronic structure and magnetic exchange interactions in pure and V-doped Fe 16 N 2 are studied within the framework of density functional theory. The Curie temperatures were obtained with both mean field approximation (MFA) as well as Monte Carlo (MC) calculations. The Curie temperature (T C ) for pure Fe 16 N 2 obtained within MFA are significantly larger than the experimental value, suggesting the importance of thermal fluctuations in these systems, and has a resemblance of a lower dimensional spin system. We also briefly discuss about the various possible factors which may lead to a large magnetic moment in this material. The calculated magnetic susceptibility at zero field shows sharp peak at T=T C which resemble a local moment system. From the nature of exchange interactions we try to figure out the nature of the Fesites which might contain localized d-states. Finally, we point out that Fe 16 N 2 can also act as a good spin injector for the III-V semiconductors in addition to its well promised application as permanent magnet since it has a very high spin polarization (larger compared to elemental ferromagnets) as well as quite smaller lattice mismatch (compared to half-metallic Heusler alloys) with the conventional III-V semiconductors such as GaAs or InGaAs. We further demonstrate this through our calculations for Fe 16 N 2 (001)/InGaAs(001) heterostructures which shows the non-negligible spin polarization in the semiconductor (InGaAs) region implying a long spin diffusion length.

show abstract

Temperature dependence of spin injection efficiency in an epitaxially grown Fe/GaAs hybrid structure

Cited by 7 publications

References 19 publications

First-principles study of the complex magnetism in Fe16N2

First-principles study of the complex magnetism in Fe16N2

Fabrication of spin valve junctions based on Fe₃Si/FeSi₂/Fe₃Si trilayered films

Uncovering the puzzle of complex magnetism in Fe16N2: a first-principles based study

Contact Info

Product

Resources

About

Temperature dependence of spin injection efficiency in an epitaxially grown Fe/GaAs hybrid structure

Cited by 7 publications

References 19 publications

First-principles study of the complex magnetism in Fe16N2

First-principles study of the complex magnetism in Fe16N2

Fabrication of spin valve junctions based on Fe3Si/FeSi2/Fe3Si trilayered films

Uncovering the puzzle of complex magnetism in Fe16N2: a first-principles based study

Contact Info

Product

Resources

About

Fabrication of spin valve junctions based on Fe₃Si/FeSi₂/Fe₃Si trilayered films