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Zhuang, Hong-Zhang; Zou, Xian‐Wu; Jin, Zhun‐Zhi; Tian, Decheng

doi:10.1103/physrevb.55.r6105

Cited by 19 publications

(10 citation statements)

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“…And above T g , the transitions between PBR and RCPC take place and the net number of rings drops rapidly, so that the concentration n R of BO 3 units in RCPCs increases rapidly. Based on this structural model, we have interpreted well the temperature dependence of the intensities and the frequency shift of characteristic Raman spectra of vitreous and molten B 2 O 3 [6]. Besides, we have also studied recently the temperature dependence of the mechanical internal friction spectra for different frequencies, the light scattering relaxation functions and the compressibility relaxation curves of the vitreous and molten B 2 O 3 [23].…”

Section: Model and Calculationsmentioning

confidence: 72%

“…Here n B and n R denote the respective concentrations of the units of BO 3 in PBR and RCPC configurations. And n B has been given by MPAST [6], i.e.…”

Section: Model and Calculationsmentioning

confidence: 99%

“…where n Bi and n Ri are the vibration frequencies obtained by ab initio calculations to B 2 O 3 [8,6] The structural developments of B 2 O 3 with temperature can be described as follows: When the temperature is below glass transition temperature T g , the concentration n B of BO 3 units in PBRs dominates and almost remains unchanged. At T g , openings of PBR clusters are initiated.…”

Section: Model and Calculationsmentioning

confidence: 99%

“…Below T g , n R approximately equals zero; from T g to T m , the boroxol rings break down with fastest 312 Hong-Zhang Zhuang, Xian-Wu Zou, Zhun-Zhi Jin, and De-Cheng Tian [15] velocity, n R increases rapidly; above T m , the concentration of the boroxol rings is still quite great but the rate of decrease of the boroxol rings slows down as the temperature raised [6]. As a matter of fact, the features of the shape of above physical quantities at and above T g is consistent to the Raman data analyses [6,10] of B 2 O 3 . The leveling off of the 1210 cm ± ±1 mode at and above T m shows that the atomic configurations in which the boroxol rings are connected via a single oxygen atom, disappear gradually from T g till T m .…”

Section: Model and Calculationsmentioning

confidence: 99%

“…Concepts of percolation theory were introduced later by Cohen and Grest [2]. For the network forming component, a model of phonon-assisted structural transition (MPAST) has been suggested recently [6]. The amorphous system of interest consists of atomic clusters with different atomic configurations and binding energies.…”

Section: Introductionmentioning

confidence: 99%

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Temperature Dependence of the Moduli, Specific Volume, and Sound Velocities of Vitreous and Molten B2O3

Zhuang

Zou²,

Jin

et al. 1999

phys. stat. sol. (b)

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Section: Model and Calculationsmentioning

confidence: 72%

“…Here n B and n R denote the respective concentrations of the units of BO 3 in PBR and RCPC configurations. And n B has been given by MPAST [6], i.e.…”

Section: Model and Calculationsmentioning

confidence: 99%

Section: Model and Calculationsmentioning

confidence: 99%

Section: Model and Calculationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Temperature Dependence of the Moduli, Specific Volume, and Sound Velocities of Vitreous and Molten B2O3

Zhuang

Zou²,

Jin

et al. 1999

phys. stat. sol. (b)

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Synthesis of Atomically Thin Boron Films on Copper Foils

Tai

Zhou

et al. 2015

Angewandte Chemie

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Tw o-dimensional boron materials have recently attracted extensive theoretical interest because of their exceptional structural complexity and remarkable physical and chemical properties.H owever,s uch 2D boron monolayers have still not been synthesized. In this report, the synthesis of atomically thin 2D g-boron films on copper foils is achieved by chemical vapor deposition using amixture of pure boron and boron oxide powders as the boron source and hydrogen gas as the carrier gas.S trikingly,t he optical band gap of the boron film was measured to be around 2.25 eV,w hich is close to the value (2.07 eV) determined by first-principles calculations, suggesting that the g-B 28 monolayer is afascinating direct band gap semiconductor.Furthermore,astrong photoluminescence emission band was observed at approximately 626 nm, which is again due to the direct band gap.This study could pave the way for applications of two-dimensional boron materials in electronic and photonic devices.Two-dimensional (2D) materials are attractive components of atomic-layer field-effect transistors (FETs), sensors,a nd photovoltaic and photoelectric devices. [1][2][3][4][5] Although graphene has been shown to be au seful material for highperformance electronics owing to its very high carrier mobility,i ts uffers from the lack of as ignificant band gap, which limits its application in digital electronics. [3][4][5] Hence, three-atom-thick 2D semiconducting transition-metal dichalcogenides (TMDs;e .g., MoS 2 ,W S 2 ,M oSe 2 ,W Se 2 )a nd oneatom-thick non-metal/metal layers with ah oneycomb structure (e.g., silicene,g ermanene,p hosphorene,a rsenene,a ntimonene,a nd stannene) have attracted wide interest. [3][4][5][6][7]

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