Temperature dependence of Raman scattering in GaMnN

Guo, Liping; Zhang, Y. H.; Shen, Wei

doi:10.1063/1.2364472

Cited by 13 publications

(22 citation statements)

References 18 publications

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“…Thus, FWHM increases with increasing temperature. Here, the approach developed by Guo et al 23 was employed to explain linewidths broadening of A g (3) and A g (10) phonon modes. The temperature dependence of linewidths broadening is caused by phenomenon of the optical phonon decay into two (three phonon process) or three (four phonon process) acoustic phonons with equal energies stemming from lattice potential cubic and quartic anharmonicity.…”

Section: Resultsmentioning

confidence: 99%

Temperature dependence of Raman scattering in β-(AlGa)2O3 thin films

et al. 2016

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We report a detailed investigation on temperature-dependent Raman scattering of β-(AlGa)2O3 thin films with different Al content (0-0.72) under the temperature range of 77-300 K. The temperature-dependent Raman shifts and linewidths of the phonon modes were obtained by employing Lorentz fitting. The linewidths broadening of phonon modes with the temperature can be well explained by a model involving the effects of thermal expansion, lattice-mismatch-induced strain, and decay of optical phonon into two and three phonons. It is clearly demonstrated dependence of the linewidths and decay process on the Al content in β-(AlGa)2O3 thin films, which can provide an experimental basis for realization of (AlGa)2O3-based optoelectronic device applications.

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Section: Resultsmentioning

confidence: 99%

Temperature dependence of Raman scattering in β-(AlGa)2O3 thin films

et al. 2016

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“…The success of the preparation of ferromagnetic Ga 1−x Mn x N using the molecular beam epitaxy ͑MBE͒ technique is quite recent [3][4][5][6][7] and has attracted the attention of several groups concerning the mentioned as well as other techniques. [8][9][10][11][12][13][14] In a recent report we have described the preparation of Ga 1−x Mn x N nanocrystalline films using the sputtering technique. 15 The low substrate temperature, allowed by the plasma breaking of N 2 molecules and the use a metallic Ga target covered by small Mn pieces, makes the preparation and Mn incorporation simple and versatile.…”

Section: Introductionmentioning

confidence: 99%

Structural and vibrational analysis of nanocrystalline Ga1−xMnxN films deposited by reactive magnetron sputtering

Silva

Leite

Tabata

et al. 2007

Journal of Applied Physics

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The structural and vibrational properties of nanocrystalline Ga 1−x Mn x N films deposited by reactive magnetron sputtering were analyzed in a wide composition range ͑0 Ͻ x Ͻ 0.18͒. The films were structurally characterized using x-ray diffraction with Rietveld refinement. The corresponding vibrational properties were investigated using micro-Raman and Fourier transform infrared spectroscopies. The films present a high crystallized fraction, crystallites having wurtzite structure, and high orientation texture with the c axis oriented perpendicular to the substrate surface. Rietveld analysis indicates that Mn atoms are incorporated substitutionally into Ga positions and show that the ionic character of cation-N bonds along the c axis is favored by the Mn incorporation. No evidence for Mn segregation or Mn rich phases was found in the composition range analyzed. Micro-Raman scattering spectra and infrared absorption experiments showed progressive changes with the increase of x and monotonic shifts of the GaN TO and LO peaks to lower frequencies. The structural and vibrational analyses are compared and the influence of Mn on the static and dynamic properties of the lattice is analyzed.

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“…[20][21][22] To analyse the spectra of (Ga,Mn)N, we employ an approach similar to the one of Gebicki et al, 23 but based on the deconvolution of the Mn-related signal into six Lorentzian contributions, as shown in Fig. 2.…”

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confidence: 99%

Functional Mn–Mgk cation complexes in GaN featured by Raman spectroscopy

Devillers

Leite

Silva

et al. 2013

Applied Physics Letters

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The evolution of the optical branch in the Raman spectra of (Ga,Mn)N:Mg epitaxial layers as a function of the Mn and Mg concentrations, reveals the interplay between the two dopants. We demonstrate that the various Mn-Mg-induced vibrational modes can be understood in the picture of functional Mn–Mgk complexes formed when substitutional Mn cations are bound to k substitutional Mg through nitrogen atoms, the number of ligands k being driven by the ratio between the Mg and the Mn concentrations.

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Temperature dependence of Raman scattering in GaMnN

Cited by 13 publications

References 18 publications

Temperature dependence of Raman scattering in β-(AlGa)2O3 thin films

Temperature dependence of Raman scattering in β-(AlGa)2O3 thin films

Structural and vibrational analysis of nanocrystalline Ga1−xMnxN films deposited by reactive magnetron sputtering

Functional Mn–Mgk cation complexes in GaN featured by Raman spectroscopy

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