Temperature dependence of Raman linewidth and shift in CuI

Fukumoto, T.; Tabuchi, K.; Nakashima, S.; Mituishi, A.

doi:10.1016/0030-4018(74)90109-6

Cited by 13 publications

(8 citation statements)

References 6 publications

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“…At this point we should mention that Raman data of Fukumoto et al 23 show for the TO and LO phonons of ␥-CuI at 300-K linewidths of about 12 cm Ϫ1 ͑FWHM͒, which agree within error with those of Fig. 4.…”

Section: B Temperature Dependence Of the Anharmonic Self-energiessupporting

confidence: 87%

“…The lowest frequency structure in this spectrum is a broad band located at Ϸ95 cm Ϫ1 . This structure has been asigned in the past 22,23 to a 2TA phonon combination enhanced by disorder effects within an off-center model for the copper ions. This off-center model has been discarded rather conclusively in recent work with isotopically substituted samples.…”

Section: Discussionmentioning

confidence: 99%

“…21 This, added to the strong broadening at K, is the reason why the LO peak barely appears in many of the published spectra of ␥-CuI which must have been taken on ͕111͖ surfaces. 2,15,22,23 Figures 1 and 2 indicate that the TO peak is narrower ͓⌫(FWHM)Ϸ0.5 cm Ϫ1 ͔ at low temperatures than the corresponding LO peak ͓⌫(FWHM) Ϸ1 cm Ϫ1 ͔, whereas at 300 K both widths are nearly equal for 65 CuI. This fact will lead below to the necessity of introducing different decay channels for the interpretation of the measured temperature dependence of these linewidths, plotted in Fig.…”

Section: B Temperature Dependence Of the Anharmonic Self-energiesmentioning

confidence: 96%

“…Another possible decay channel used by Fukumoto et al 23 involves a two-phonon difference mode, which simulates a term quadratic in temperature but only at intermediate temperatures. This channel might account for the observed temperature dependence of the TO linewidth at ambient pressure, but cannot reproduce the almost pressure independent linewidth observed at 240 K and its contribution to the temperature dependence of the LO linewidth is also negated by the very low two-phonon difference DOS in the LO region.…”

Section: A Rigid-ion Modelmentioning

confidence: 99%

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Pressure and temperature dependence of the Raman phonons in isotopic γ-CuI

et al. 2002

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The transverse-optic ͑TO͒ phonons of zinc-blende-type CuCl (␥-CuCl͒ and the longitudinal-optic ͑LO͒ phonons of ␥-CuBr exhibit striking anharmonic self-energy anomalies at the center of the Brillouin zone. We investigate here by Raman spectroscopy the dependence of the LO and TO phonons of ␥-CuI on pressure, temperature, and isotopic mass of copper, in the search for related effects. We find that the pressure dependence of the TO phonon linewidth is qualitatively different at low temperature and close to room temperature. A model is developed to interpret these differences based on anharmonic decay into two and three phonons ͑two different channels͒. In order to make semiquantitative predictions we used the experimental pressure dependence of the TO phonons and that of phonons at the edge of the Brillouin zone that we obtained by linearresponse ab initio local-density approximation calculations. We have also calculated the pressure dependence of the zone-edge phonons of ␥-CuCl and ␥-CuBr and compared it with the few existing experimental results. In this process, interesting anomalies concerning the transverse-acoustic phonons at the zone edge have been found.

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Section: B Temperature Dependence Of the Anharmonic Self-energiessupporting

confidence: 87%

Section: Discussionmentioning

confidence: 99%

Section: B Temperature Dependence Of the Anharmonic Self-energiesmentioning

confidence: 96%

Section: A Rigid-ion Modelmentioning

confidence: 99%

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Pressure and temperature dependence of the Raman phonons in isotopic γ-CuI

et al. 2002

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“…The temperature dependence of the Raman LO and TO peaks has been reported in Refs. and is shown in Fig. .…”

Section: Structural Properties Of Cuimentioning

confidence: 99%

Cuprous iodide - a p-type transparent semiconductor: history and novel applications

Grundmann

Schein

Lorenz

et al. 2013

Phys. Status Solidi A

242

313

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Halide semiconductors stand at the very beginning of semiconductor science and technology. CuI was reported as the first transparent conductor, and the first field effect transistor was made from KBr. Although halogens are frequently used in semiconductor preparation, little use is currently made from halide semiconductors in electronics and photonics. We review past reports on the metal halide semiconductor CuI and related alloys and discuss recent progress with regard to this material including its use in organic electronics and solar cells as well as our own work on fully transparent bipolar heterostructure diodes (p‐CuI/n‐ZnO) with high rectification of several 107 and ideality factors down to 1.5. γ‐CuI(111) thin film on glass (1 × 1 cm2) and IV‐characteristics of p‐CuI/n‐ZnO/a‐Al2O3 bipolar heterojunction diode.

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Temperature Dependence of Raman Spectra of Cuprous Halides

Fukumoto

Nakashima

Tabuchi

et al. 1976

Physica Status Solidi (b)

Self Cite

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The temperature dependence of the half linewidth and frequency shift of Raman lines in cuprous halides are investigated in the temperature range from 4.2 to 300 K. As for the LO and TO mode of CuI and CuBr, and the LO mode of CuCI, the experimental linewidth and frequency shift are in good agreement with the theoretical ones which have been calculated in terms of three-phonon interaction. I n order to explain the temperature dependence of a strong combination mode in conjunction with the TO phonons of CuCI, the hybridization theory proposed by Ruvalds and Zawadowski is employed in which hybridization between a two-phonon and a single phonon state is postulated. A numerical analysis is made assum-

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Temperature dependence of Raman linewidth and shift in CuI

Cited by 13 publications

References 6 publications

Pressure and temperature dependence of the Raman phonons in isotopic γ-CuI

Pressure and temperature dependence of the Raman phonons in isotopic γ-CuI

Cuprous iodide - a p-type transparent semiconductor: history and novel applications

Temperature Dependence of Raman Spectra of Cuprous Halides

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