2010
DOI: 10.1063/1.3292019
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Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures

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Cited by 139 publications
(75 citation statements)
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“…Examples of these structures include Si-, GaAs-, and GaN-based FETs with periodic multifinger grating gates [1,5,6,14], Si MOSFETs with a periodically modulated oxide thickness [28], and very recently GaAs/AlGaAs heterostructures with a periodically modulated width of the 2D electron channel [26]. All of these systems feature step-like periodic changes of various parameters of the 2D electron channel such as electron density, screening, and geometric size.…”
Section: Tl Theory Of Plasmonic Crystals In Periodic 2d Electronmentioning
confidence: 99%
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“…Examples of these structures include Si-, GaAs-, and GaN-based FETs with periodic multifinger grating gates [1,5,6,14], Si MOSFETs with a periodically modulated oxide thickness [28], and very recently GaAs/AlGaAs heterostructures with a periodically modulated width of the 2D electron channel [26]. All of these systems feature step-like periodic changes of various parameters of the 2D electron channel such as electron density, screening, and geometric size.…”
Section: Tl Theory Of Plasmonic Crystals In Periodic 2d Electronmentioning
confidence: 99%
“…However, and should be defined to satisfy 1/2 consistent with Eq. (14). Once one of these quantities is defined in terms of and the second one is determined by the power relationship formulated above.…”
Section: Transmission Line Formulation Of the 2d Plasmon Theorymentioning
confidence: 99%
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