Temperature dependence of piezoelectric properties of sputtered AlN on silicon substrate

Kano, Kazuhiko; Arakawa, Kazuki; Takeuchi, Yukihiro; Akiyama, Morito; Ueno, Naohiro; Kawahara, Nobuaki

doi:10.1016/j.sna.2005.12.047

Cited by 31 publications

(19 citation statements)

References 9 publications

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“…Kano et al used rf-sputtered 1200 nm thick AlN films to reveal that AlN can be used as an actuator with a constant output velocity up to 300°C [2]. They reported a constant d 33 value of 1.38 pC/N at temperatures ranging from 20°C to 300°C.…”

Section: Introductionmentioning

confidence: 99%

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

et al. 2007

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A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPEgrown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d 33 , of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d 33 . A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d 33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

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Section: Introductionmentioning

confidence: 99%

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

et al. 2007

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“…It appears that the cold wall leads to condensation and release of parasitic species (AlCl 3 , NH 4 Cl, and the AlCl 3 .NH 3 adduct) that participate to growth in an uncontrollable way.…”

Section: General Discussion On the Effect Of Process Parametersmentioning

confidence: 99%

“…Furthermore, AlN has promising applications in surface acoustic wave devices (SAW) and microelectromechanical systems (MEMS) due to its high acoustic velocity and piezoelectric properties [2], which are maintained at high temperatures [3,4]. The most attractive perspective for AlN-base devices is in the field of deep-ultraviolet light-emitting diodes working at extremely short wavelengths [5].…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach

et al. 2017

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Abstract:This study aims to present the interest of using a design of experiments (DOE) approach for assessing, understanding and improving the hydride vapor phase epitaxy (HVPE) process, a particular class of chemical vapor deposition (CVD) process. The case of the HVPE epitaxial growth of AlN on (0001) sapphire will illustrate this approach. The study proposes the assessment of the influence of 15 process parameters on the quality or desired properties of the grown layers measured by 9 responses. The general method used is a screening design with the Hadamard matrix of order 16. For the first time in the growth of AlN by CVD, a reliable estimation of errors is proposed on the measured responses. This study demonstrates that uncontrolled release of condensed species from the cold wall is the main drawback of this process, explaining many properties of the grown layers that could be mistakenly attributed to other phenomena without the use of a DOE. It appears also that the size of nucleation islands, and its corollary, the stress state of the layer at room temperature, are key points. They are strongly correlated to the crystal quality. Due to the intrinsic limitations of the screening design, the complete optimization of responses cannot be proposed but general guidelines for hydride (or halogen) vapor phase epitaxy (HVPE) experimentations, in particular with cold wall apparatus, are given.

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“…Sutherland's formula is used to derive the dynamic viscosity of air as a function of the temperature (13).…”

Section: ) Thermal Expansionmentioning

confidence: 99%

“…Even if the width and length of the mass are slightly modified when the temperature increases, the main influence here is given by the effective viscosity, proportional to the air viscosity, itself dependent on the temperature as given in (13). Therefore, the damping due to squeeze film effect will roughly vary with temperature according to (31).…”

Section: ) Air Dampingmentioning

confidence: 99%

Experimental and Theoretical Study of a Piezoelectric Vibration Energy Harvester Under High Temperature

Arroyo

Jia

et al. 2017

J. Microelectromech. Syst.

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Abstract-This work focuses on studying the effect of increasing the ambient temperature up to 160• C on the power harvested by a MEMS piezoelectric micro-cantilever manufactured using an aluminum nitride-on-silicon fabrication process. An experimental study shows that the peak output power decreases by 60% to 70% depending on the input acceleration. A theoretical study establishes the relationship of all important parameters with temperature and includes them into a temperature-dependant model. This model shows that around 50% of the power drop can be explained by a decreasing quality factor, and that thermal stresses account for around 30% of this decrease.

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Temperature dependence of piezoelectric properties of sputtered AlN on silicon substrate

Cited by 31 publications

References 9 publications

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach

Experimental and Theoretical Study of a Piezoelectric Vibration Energy Harvester Under High Temperature

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