Temperature Dependence of Photoluminescence of α-Ga<sub>2</sub>O<sub>3</sub>Powders

Cho, Sungryong; Lee, Jongwon; Park, In Yong; Kim, Seontai

doi:10.1143/jjap.41.5237

Cited by 8 publications

(5 citation statements)

References 17 publications

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“…Besides the extensive research on the luminescence properties of β-Ga 2 O 3 , the optical transitions in the metastable phase α-Ga 2 O 3 material have been also investigated recently. Cho et al [144] investigated temperature dependence of PL of α-Ga 2 O 3 powers, which is synthesized by the heat treatment of gallium oxyhydroxide (GaOOH) under O 2 and NH 3 gas flow conditions, respectively. Figure 40 shows the PL spectra from α-Ga 2 O 3 synthesized in O 2 environment.…”

Section: Defect Related Optical Transitions In α-Ga 2 Omentioning

confidence: 99%

Deep-level defects in gallium oxide

Wang¹,

Chen²,

Ren³

et al. 2020

J. Phys. D: Appl. Phys.

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As an ultrawide bandgap semiconductor, gallium oxide (Ga2O3) has superior physical properties and has been an emerging candidate in the applications of power electronics and deep-ultraviolet optoelectronics. Despite numerous efforts made in the aspect of material epitaxy and power devices based on β-Ga2O3 with rapid progresses, the fundamental understanding of defect chemistry in Ga2O3, in particular, acceptor dopants and carrier compensation effects, remains a key challenge. In this focused review, we revisited the principles of popular approaches for characterizing defects in semiconductors and summarized recent advances in the fundamental investigation of defect properties, carrier dynamics and optical transitions in Ga2O3. Theoretical and experimental investigations revealed the microstructures and possible origins of defects in β-Ga2O3 bulk single crystals, epitaxial films and metastable-phased α-Ga2O3 epilayers by the combined means of first-principle calculation, deep level transient spectroscopy and cathodoluminescence. In particular, defects induced by high-energy irradiation have been reviewed, which is essential for the identification of defect sources and the evaluation of device reliability operated in space and other harsh environments. This topic review may provide insight into the fundamental properties of defects in Ga2O3 to fully realize its promising potential in practical applications.

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Section: Defect Related Optical Transitions In α-Ga 2 Omentioning

confidence: 99%

Deep-level defects in gallium oxide

Wang¹,

Chen²,

Ren³

et al. 2020

J. Phys. D: Appl. Phys.

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“…The GaAs(111) surface is characterized by its threefold symmetry with alternating 2 11 and 1 10 directions separated by 30 • . Unfortunately, this threefold symmetry leads to the formation of pyramidal structures on the surface under usual growth conditions [72]. However, mirror-like morphologies without any pyramidal features can be achieved when substrates with a slight off-orientation (≤ 5 • ) are used [73].…”

Section: Mbe Growth Of (Alga)as(111) Qwsmentioning

confidence: 99%

“…Epilayers with surfaces free of pyramids can also be deposited on exactly oriented GaAs(111)B(= (111)) substrates if the V/III flux ratio and growth temperature are accurately chosen [74]. Under these conditions, a static √ 19 × √ 19 R 23 • surface reconstruction can be observed [72,[74][75][76][77]. Correspondingly, the (111)B samples used in this study were grown at a temperature of 600 • C on √ 19 × √ 19 R 23 • reconstructed surfaces of slightly off-oriented (1-3 • ) GaAs(111)B substrates to ensure mirror-like surfaces without pyramidal features.…”

Section: Mbe Growth Of (Alga)as(111) Qwsmentioning

confidence: 99%

Spin transport and spin manipulation in GaAs (110) and (111) quantum wells

Hernández-Mínguez

Biermann

Hey

et al. 2014

Physica Status Solidi (b)

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This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.Spin dephasing via the spin-orbit interaction is a major mechanism limiting the electron spin lifetime in zincblende III-V quantum wells (QWs). QWs grown along the non-conventional crystallographic directions [111] and [110] offer new interesting perspectives for the control of spin-orbit (SO) related spin dephasing mechanisms due to the special symmetries of the SO fields in these structures. In this contribution, we show that the combination of such special symmetries with the transport of carriers by the type II modulation accompanying a surface acoustic wave allows the transport of spin polarized carriers over distances of tens of μm in GaAs(110) QWs. In the case of GaAs(111), the Rashba contribution to the SO field generated by an electric field perpendicular to the QW plane is used to compensate the Dresselhaus contribution at low temperatures, leading to spin lifetimes of up to 100 ns. The compensation mechanism is less effective at high temperatures due to nonlinear terms of the Dresselhaus contribution. Perspectives to overcome this limitation via the combination of (111) structures with the transport of spins by surface acoustic waves are discussed.

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“…[31][32][33][34][35][36][37][38][39] A way to circumvent this limit is to exploit thermodynamics by entering an adsorption-controlled growth regime where the volatile constituents are provided in excess, but film composition is controlled automatically and locally through the volatility of those constituents to produce single-phase films. [40][41][42][43][44][45][46][47][48][49] Adsorption-control has been extensively used for the growth of oxides [50][51][52] including, most recently, for the growth of epitaxial BaSnO 3 films utilizing metalorganic precursors. 53 In this Letter, we utilize adsorption-controlled growth with inorganic precursors to achieve La-doped BaSnO 3 thin films with (1) higher mobility and (2) that are conductive to lower carrier concentrations than have been reported to date.…”

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confidence: 99%

Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

et al. 2017

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Epitaxial La-doped BaSnO 3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnO x desorbs from the film surface. A film grown on a (001) DyScO 3 substrate exhibited a mobility of 183 cm 2 ·V -1 ·s -1 at room temperature and 400 cm 2 ·V -1 ·s -1 at 10 K, despite the high concentration (1.2×10 11 cm -2 ) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO) 2 Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations that other defects-possibly (BaO) 2 crystallographic shear defects or point defects-significantly reduce the electron mobility.

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Temperature Dependence of Photoluminescence of α-Ga₂O₃Powders

Cited by 8 publications

References 17 publications

Deep-level defects in gallium oxide

Deep-level defects in gallium oxide

Spin transport and spin manipulation in GaAs (110) and (111) quantum wells

Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

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Temperature Dependence of Photoluminescence of α-Ga2O3Powders

Cited by 8 publications

References 17 publications

Deep-level defects in gallium oxide

Deep-level defects in gallium oxide

Spin transport and spin manipulation in GaAs (110) and (111) quantum wells

Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

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Temperature Dependence of Photoluminescence of α-Ga₂O₃Powders