Temperature dependence of photoluminescence intensity of self-assembled CdTe quantum dots in the ZnTe matrix under different excitation conditions

Reznitsky, A.; Klochikhin, A. A.; Permogorov, S.

doi:10.1134/s1063783412010283

Cited by 13 publications

(7 citation statements)

References 25 publications

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“…here Xn,l is the root of the Bessel function of half-integer order l + 1/2. The wave function of an electron is given by expression (2). The SIRR, taking into account the dispersion of QD sizes and the finite lifetime of the resonant A + -state, is determined by an expression of the next form [8]:…”

Section: Temperature and Field Dependences Of The Spectral Intensity Of Recombination Radiation In A Quasi-zero-dimensional Structure Witmentioning

confidence: 99%

“…The relevance of studies of the spectral intensity of recombination radiation (SIRR) temperature dependence in quasi-zero-dimensional structures is determined by the fact that, first, electro-optical systems based on quantum dots (QD)s have significantly better parameters compared to similar devices based on quantum wells. Second, the temperature quenching of luminescence is usually associated with the presence of a nonradiative channel caused by a defect located in a QD [1,2] or at the barrier boundary. In this work, we would like to draw attention to the possible existence of one more channel of temperature quenching of luminescence associated with tunneling processes, in particular, with the process of dissipative tunneling of a hole localized at the A + -center into the matrix, surrounding the QD.…”

Section: Introductionmentioning

confidence: 99%

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Temperature dependence of recombination radiation in semiconductor nanostructures with quantum dots containing impurity complexes

Кревчик¹,

Razumov²,

Семенов³

et al. 2021

Nanosystems: Phys. Chem. Math.

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Temperature dependence of the spectral intensity of recombination radiation in a quasi-zero-dimensional structure, containing impurity complexes "A + + e" (a hole localized on a neutral acceptor, interacting with an electron localized in the ground state of a quantum dot), has been investigated in an external electric field in the presence of tunneling decay of a quasistationary A + -state. Probability of dissipative tunneling of a hole has been calculated in the one-instanton approximation, and the influence of tunneling decay and of an external electric field on the A + -state binding energy and on the spectra of recombination radiation, associated with the optical transition of an electron from the ground state of a quantum dot to the A + -state of the impurity center, has been investigated in the adiabatic approximation. "Dips" in the temperature dependence of the SIRR have been revealed, which are associated with the presence of resonant tunneling at certain values of temperature and strength of the external electric field, for which the double-well oscillatory potential becomes symmetric.

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Section: Temperature and Field Dependences Of The Spectral Intensity Of Recombination Radiation In A Quasi-zero-dimensional Structure Witmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Temperature dependence of recombination radiation in semiconductor nanostructures with quantum dots containing impurity complexes

Кревчик¹,

Razumov²,

Семенов³

et al. 2021

Nanosystems: Phys. Chem. Math.

View full text Add to dashboard Cite

show abstract

“…According to the results of many studies [4][5][6][7][8][9][10][11][12][13][14], the temperature dependences of photoluminescence in dielectric and semiconductor nanostructures can significantly differ in shape and type when using various excitation methods. The PL temperature curves of quantum dots are most often presented in the form of decreasing functions with increasing temperature [4,5,7]. At the same time, curves with a clearly defined maximum or a monotone increase in PL intensity is sometimes observed.…”

Section: Introductionmentioning

confidence: 99%

“…This is most often characteristic of direct luminescence excitation of confined excitons [9][10][11][12][13]. The energy transfer of emitting nanoparticles through intermediate electronic states of the matrix [4][5][6][7] can also lead to an increase in PL intensity and to curves with an extreme shape. Thus, there is a need for a detailed analysis of various energy transfer schemes and types of electronic transitions in order to explain the observed variety of forms of temperature dependences of QD photoluminescence [4][5][6][7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Temperature Effects in the Photoluminescence of Semiconductor Quantum Dots

Zatsepin¹,

Biryukov²

2020

Quantum Dots - Fundamental and Applications

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Temperature effects in the exciton photoluminescence specific to semiconductor quantum dots (QDs) are reviewed using Si QDs as an example. The processes of direct and indirect optical excitation of spatially confined excitons in quantum dots embedded in dielectric matrix are analyzed. The temperature behavior of the quantum dots photoluminescence (PL) excited by various methods was described in detail by a generalized electronic transitions scheme using different exciton relaxation models. The different types of temperature dependences were analyzed. The analytical expressions were obtained for their description, which allow one to determine the energy and kinetic characteristics of QD photoluminescence. It was found that the shape of the temperature dependence makes it possible to understand whether the process of exciton relaxation contains several different thermally activated stages or this is a simple one-stage process. The applicability of the obtained expressions for the analysis of the luminescence properties of quantum dots is demonstrated by the example of crystalline and amorphous silicon nanoclusters in silica matrix. It has been established that the quantum confinement effect of excitons in quantum dots leads to a decrease in the frequency characteristics and thermal activation barriers for nonradiative transitions.Keywords: quantum dots, exciton photoluminescence, temperature dependence of luminescence, quantum confinement effects, ion implantation, mechanisms of excitation and relaxation 2 Quantum Dots -Fundamental and Applications Temperature Effects in the Photoluminescence of Semiconductor Quantum Dots DOI: http://dx.doi.org/10.5772/intechopen.91888 Quantum Dots -Fundamental and Applications Temperature Effects in the Photoluminescence of Semiconductor Quantum Dots DOI: http://dx.doi.org/10.5772/intechopen.91888 Temperature Effects in the Photoluminescence of Semiconductor Quantum Dots

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“…[1][2][3][4] Zinc telluride (ZnTe) is a relatively little studied direct band gap semiconductor and it is interesting in terms of the expansion of element basis of modern electronics. 1 Also, as a direct band gap semiconductor, ZnTe has high photosensitivity and can be successfully used for efficient solar energy conversion.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamics of defect subsystem in zinc telluride crystals

et al. 2016

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Using method on the base of minimizing of thermodynamic potential in "crystal-vapor" system as a function of defect concentration the equilibrium concentration of point defects and free charge carriers in zinc telluride (ZnTe) crystals have been calculated depending on the technological factors of two-temperature annealing (annealing temperature T and vapor pressure P Zn of zinc or P Te of tellurium). It is shown that the dominant defects are zinc vacancies the charge state of which depends on the technological conditions of annealing.

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Temperature dependence of photoluminescence intensity of self-assembled CdTe quantum dots in the ZnTe matrix under different excitation conditions

Cited by 13 publications

References 25 publications

Temperature dependence of recombination radiation in semiconductor nanostructures with quantum dots containing impurity complexes

Temperature dependence of recombination radiation in semiconductor nanostructures with quantum dots containing impurity complexes

Temperature Effects in the Photoluminescence of Semiconductor Quantum Dots

Thermodynamics of defect subsystem in zinc telluride crystals

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