Temperature Dependence of Photoluminescence in Layered Semiconductor n-GaS Doped with Sn

Abstract

The radiative recombination mechanisms of Sn-doped GaS have been investigated by photoluminescence (PL) measurements. The PL spectrum at 77 K appears in the energy region between 1.25 and 2.3 eV and is dominated by two emission bands. The temperature dependence of the full-width at half-maximum and the shapes of the PL spectra of the two emission bands are characterized by the recombination mechanism of the configurational coordinate model. The origins of the two emission bands are related to the complex centers of vacancies and impurity atoms.