Temperature dependence of optical phonon lifetimes in ZnSe

Anand, S.; Verma, Prabhat; Jain, Kavita; Abbi, S. C.

doi:10.1016/0921-4526(96)84974-x

Cited by 62 publications

(58 citation statements)

References 9 publications

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“…The parameter G 0 for LO mode is small compared to that for TO mode. Similar results were previously obtained by Anand et al [13] and Bairamov et al [22] for ZnSe and GaP crystals, respectively. The simple model presented here shows that the cubic anharmonicity accounts well for the temperature dependence of the linewidth of the optical phonons studied.…”

Section: Resultssupporting

confidence: 81%

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Temperature-dependent Raman scattering spectra of ε-GaSe layered crystal

Gasanly

Aydınlı

Özkan

et al. 2002

Materials Research Bulletin

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The temperature dependencies (15±300 K) of seven Raman-active mode frequencies and linewidths in layered gallium selenide have been measured in the frequency range from 10 to 320 cm À1 . We observed softening and broadening of the optical phonon lines with increasing temperature. Comparison between the experimental data and theories of the shift and broadening of the intralayer phonon lines during heating of the crystal showed that the experimental dependencies can be explained by the contributions from thermal expansion, lattice anharmonicity and crystal disorder. The pure-temperature contribution (phonon± phonon coupling) is due to three-phonon processes. Moreover, it was established that the effect of crystal disorder on the linewidth broadening of TO mode is stronger than that of LO mode. #

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Section: Resultssupporting

confidence: 81%

“…3 shows the experimental results (open circles) for the line positions n(T) of one of the intralayer modes, (A H 1 4 ). The phonon frequency shift with temperature can be described by the expression [11,13,19] …”

Section: Resultsmentioning

confidence: 99%

Temperature-dependent Raman scattering spectra of ε-GaSe layered crystal

Gasanly

Aydınlı

Özkan

et al. 2002

Materials Research Bulletin

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“…Here, we have used a first principles technique [159] to calculate and examine the nearzone-center optic phonon (TO and LO) intrinsic lifetimes, for the various polar dielectric materials given in Table 3. The calculated room-temperature bulk optical phonon lifetime reported here are in general accord with the available experimental data [56,60,63,[145][146][147][148][149][150][151][152][153][154][155], and fall in the range of 0.5 ps to 9 ns, orders of magnitude larger than SPP lifetimes. For instance, lifetimes between 0.6-0.8 ps and 1.4-1.9 ps were reported for wurtzite AlN [154] for the LO and TO phonon lifetimes, respectively, which compares quite favorably to our corresponding calculations of 0.88 and 2.01 ps.…”

Section: Lattice Properties and Optic Phonons: Dispersion Lifetimes supporting

confidence: 77%

“…Optic phonon lifetimes have been determined from Raman scattering techniques for a number of materials (e.g., see Refs. [59,60,63,[145][146][147][148][149][150][151][152][153][154][155]), and first principles density functional theoretical methods have been developed and applied to calculate phonon dispersions and lifetimes without adjustable parameters (e.g., see Refs. [134,141] and [156][157][158]).…”

Section: Lattice Properties and Optic Phonons: Dispersion Lifetimes mentioning

confidence: 99%

Low-loss, infrared and terahertz nanophotonics using surface phonon polaritons

et al. 2015

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Abstract:The excitation of surface-phonon-polariton (SPhP) modes in polar dielectric crystals and the associated new developments in the field of SPhPs are reviewed. The emphasis of this work is on providing an understanding of the general phenomenon, including the origin of the Reststrahlen band, the role that optical phonons in polar dielectric lattices play in supporting sub-diffraction-limited modes and how the relatively long optical phonon lifetimes can lead to the low optical losses observed within these materials. Based on this overview, the achievements attained to date and the potential technological advantages of these materials are discussed for localized modes in nanostructures, propagating modes on surfaces and in waveguides and novel metamaterial designs, with the goal of realizing low-loss nanophotonics and metamaterials in the mid-infrared to terahertz spectral ranges.

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“…It is a well know fact that the property of nanograined materials is different from that of bulk material in many aspects, such as larger grain densities, enhanced surface, large surface area to volume ratio, and more defects. Longitudinal Optical (LO) modes, Transverse Optical (TO) and 2-phonon transverse acoustic (2TA) modes have been observed at about 188.32, 199.24 and 143.28 cm -1 respectively by Anand et al [46] for (111) oriented ZnSe films. Further, the intensity of LO, TO and 2TA peaks of our ZnSe films increases with deposition temperature.…”

Section: Optical Studiesmentioning

confidence: 99%

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

Kaviyarasu¹

2016

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Substrate temperature dependent optical and structural properties of Zinc selenide (ZnSe) thin films were studied. Films were grown onto glass substrate by electron beam evaporation technique in high vacuum (10-6 Torr) at various temperatures in range of room temperature (RT) to 300 °C. Microstrain and dislocation density were also found to vary between 0.69×10 -3 , 1.12×10 -3 , 3.59×1010 cm -2 and 9.49×1010 cm -2 . The lattice parameter value 'a' for these films was calculated and found to increase from 5.577 Å to 5.652 Å respectively. Scanning electron micrographs (SEM) showed that clusters are composed of spherical and needle like nanocrystals distributed uniformly over the surface whose c-axis is parallel to the surface of the film. This confirmed the mixture comprised cubic and hexagonal phases. A comparison of atomic force microscopy (AFM) images showed that the grain size increased from about 139 nm for the RT deposited ZnSe film to about 39 nm for the ZnSe film deposited at 300 °C. The binding energy of 54.4 eV is similar to the values obtained for other selenides. The Auger parameter for zinc was calculated from the experimental binding energies of the zinc (2p 3/2 ) XPS line and the LMM Auger line the reference values are 1042.49 eV -1020.19 eV for zinc. All the films were characterized optically by UV-vis-NIR spectrophotometer in photon wavelength range (300 nm -2000 nm). The optical transmittance and reflectance were utilized to compute the absorption coefficient, refractive index and band gap energy of the films. The bandgap value of RT and 100 oC deposited ZnSe films are 2.88 eV and 2.78 eV, which are found to be blue shifted by about 0.08 -0.18 eV from the bandgap value of 2.70 eV for the standard bulk material.

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Temperature dependence of optical phonon lifetimes in ZnSe

Cited by 62 publications

References 9 publications

Temperature-dependent Raman scattering spectra of ε-GaSe layered crystal

Temperature-dependent Raman scattering spectra of ε-GaSe layered crystal

Low-loss, infrared and terahertz nanophotonics using surface phonon polaritons

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

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